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G. E. Stillman
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Journal Articles

Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

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Q. Yang, D. S. Scott, T. Chung, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 271–273 (2000)
https://doi.org/10.1063/1.126947
Published: July 2000
View articletitled, Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition
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Journal Articles

Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy

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Q. Yang, D. A. Kellogg, C. Lin, G. E. Stillman, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 1101–1103 (1999)
https://doi.org/10.1063/1.124948
Published: August 1999
View articletitled, Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy
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Journal Articles

Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

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Q. Yang, D. Scott, J. Miller, P. Meyer, H. C. Kuo, J. E. Baker, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 2993–2995 (1999)
https://doi.org/10.1063/1.123990
Published: May 1999
View articletitled, Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition
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Journal Articles

Growth of carbon doping Ga 0.47 In 0.53 As using CBr 4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

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H. C. Kuo, D. Ahmari, B. G. Moser, J. Mu, M. Hattendorf, D. Scott, R. Meyer, M. Feng, G. E. Stillman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 1185–1189 (1999)
https://doi.org/10.1116/1.590720
Published: May 1999
View articletitled, Growth of carbon doping Ga 0.47 In 0.53 As using CBr 4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications
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Journal Articles

Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy

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H. C. Kuo, B. G. Moser, H. Hsia, Z. Tang, M. Feng, G. E. Stillman, C. H. Lin, H. Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 1139–1143 (1999)
https://doi.org/10.1116/1.590709
Published: May 1999
View articletitled, Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy
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Journal Articles

Activation studies of low-dose Si implants in gallium nitride

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C. J. Eiting, P. A. Grudowski, R. D. Dupuis, H. Hsia, Z. Tang, D. Becher, H. Kuo, G. E. Stillman, M. Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 3875–3877 (1998)
https://doi.org/10.1063/1.122922
Published: December 1998
View articletitled, Activation studies of low-dose Si implants in gallium nitride
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Journal Articles

Effects of alloy ambient on PdGe contacts on n -type GaAs

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D. A. Ahmari, M. L. Hattendorf, D. F. Lemmerhirt, Q. Yang, Q. J. Hartmann, J. E. Baker, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 3479–3481 (1998)
https://doi.org/10.1063/1.121672
Published: June 1998
View articletitled, Effects of alloy ambient on PdGe contacts on n -type GaAs
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Journal Articles

Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

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H. C. Kuo, S. Thomas, T. U. Horton, B. G. Moser, G. E. Stillman, C. H. Lin, H. Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 1377–1380 (1998)
https://doi.org/10.1116/1.590079
Published: May 1998
View articletitled, Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy
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Journal Articles

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

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D. K. Sengupta, W. Fang, J. I. Malin, J. Li, T. Horton, A. P. Curtis, K. C. Hsieh, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, L. Li, H. C. Liu, K. M. S. V. Bandara, S. D. Gunapala, W. I. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 78–80 (1997)
https://doi.org/10.1063/1.119473
Published: July 1997
View articletitled, GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
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Journal Articles

Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

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D. K. Sengupta, T. Horton, W. Fang, A. Curtis, J. Li, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, A. Kar, J. Mazumder, L. Li, H. C. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 3573–3575 (1997)
https://doi.org/10.1063/1.119237
Published: June 1997
View articletitled, Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing
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Journal Articles

Semi-insulating In 0.49 Ga 0.51 P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition

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Q. J. Hartmann, N. F. Gardner, T. U. Horton, A. P. Curtis, D. A. Ahmari, M. T. Fresina, J. E. Baker, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 1822–1824 (1997)
https://doi.org/10.1063/1.118702
Published: April 1997
View articletitled, Semi-insulating In 0.49 Ga 0.51 P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition
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Journal Articles

p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

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D. K. Sengupta, S. L. Jackson, D. Ahmari, H. C. Kuo, J. I. Malin, S. Thomas, M. Feng, G. E. Stillman, Y. C. Chang, L. Li, H. C. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 3209–3211 (1996)
https://doi.org/10.1063/1.117963
Published: November 1996
View articletitled, p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm
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Journal Articles

Red shifting the intersubband response of quantum‐well infrared photodetectors by thermal annealing

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J. I. Malin, P. Liu, D. K. Sengupta, W. C. Fang, S. L. Chuang, M. Feng, G. E. Stillman, K. C. Hsieh
Journal: Journal of Applied Physics
J. Appl. Phys. 80, 4737–4740 (1996)
https://doi.org/10.1063/1.363456
Published: October 1996
View articletitled, Red shifting the intersubband response of quantum‐well infrared photodetectors by thermal annealing
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Journal Articles

Effects of thermally grown native oxides on the luminescence properties of compound semiconductors

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M. R. Islam, R. D. Dupuis, A. P. Curtis, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 946–948 (1996)
https://doi.org/10.1063/1.116952
Published: August 1996
View articletitled, Effects of thermally grown native oxides on the luminescence properties of compound semiconductors
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Journal Articles

Removal of hydrogen from the base of carbon‐doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

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Q. J. Hartmann, H. Hwangbo, A. Yung, D. A. Ahmari, M. T. Fresina, J. E. Baker, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 982–984 (1996)
https://doi.org/10.1063/1.116119
Published: February 1996
View articletitled, Removal of hydrogen from the base of carbon‐doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics
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Journal Articles

Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

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S. A. Stockman, M. T. Fresina, Q. J. Hartmann, A. W. Hanson, N. F. Gardner, J. E. Baker, G. E. Stillman
Journal: Journal of Applied Physics
J. Appl. Phys. 75, 4233–4236 (1994)
https://doi.org/10.1063/1.356011
Published: April 1994
View articletitled, Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors
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Journal Articles

Zero‐field time‐of‐flight characterization of minority‐carrier transport in heavily carbon‐doped GaAs

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C. M. Colomb, S. A. Stockman, N. F. Gardner, A. P. Curtis, G. E. Stillman, T. S. Low, D. E. Mars, D. B. Davito
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 7471–7477 (1993)
https://doi.org/10.1063/1.353991
Published: June 1993
View articletitled, Zero‐field time‐of‐flight characterization of minority‐carrier transport in heavily carbon‐doped GaAs
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Journal Articles

Optimization of interfaces in arsenide–phosphide compounds grown by gas source molecular‐beam epitaxy

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A. M. Moy, A. C. Chen, S. L. Jackson, X. Liu, K. Y. Cheng, G. E. Stillman, S. G. Bishop
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 826–829 (1993)
https://doi.org/10.1116/1.586756
Published: May 1993
View articletitled, Optimization of interfaces in arsenide–phosphide compounds grown by gas source molecular‐beam epitaxy
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Journal Articles

Generation of fast‐switching As2 and P2 beams from AsH3 and PH3 for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures

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S. L. Jackson, J. N. Baillargeon, A. P. Curtis, X. Liu, J. E. Baker, J. I. Malin, K. C. Hsieh, S. G. Bishop, K. Y. Cheng, G. E. Stillman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 1045–1049 (1993)
https://doi.org/10.1116/1.587005
Published: May 1993
View articletitled, Generation of fast‐switching As2 and P2 beams from AsH3 and PH3 for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures
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Journal Articles

Degradation of mobility in neutron irradiated GaAs by the increased scattering from multiply charged ionized defects

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J. U. Patel, J. G. Williams, G. E. Stillman
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 3734–3739 (1993)
https://doi.org/10.1063/1.352904
Published: April 1993
View articletitled, Degradation of mobility in neutron irradiated GaAs by the increased scattering from multiply charged ionized defects
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