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Journal Articles

Oxygen sensors made by monolayer graphene under room temperature

C. W. Chen, S. C. Hung, M. D. Yang, C. W. Yeh, C. H. Wu, G. C. Chi, F. Ren, S. J. Pearton

Appl. Phys. Lett. 99, 243502 (2011)

https://doi.org/10.1063/1.3668105

Published: December 2011

View article titled, Oxygen sensors made by monolayer graphene under room temperature

Journal Articles

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

S. C. Hung, C. W. Chen, C. Y. Shieh, G. C. Chi, R. Fan, S. J. Pearton

Appl. Phys. Lett. 98, 223504 (2011)

https://doi.org/10.1063/1.3596440

Published: June 2011

View article titled, High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Journal Articles

Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption

W. L. Huang, J. Labis, S. C. Ray, Y. R. Liang, C. W. Pao, H. M. Tsai, C. H. Du, W. F. Pong, J. W. Chiou, M.-H. Tsai, H. J. Lin, J. F. Lee, Y. T. Chou, J. L. Shen, C. W. Chen, G. C. Chi

Appl. Phys. Lett. 96, 062112 (2010)

https://doi.org/10.1063/1.3304071

Published: February 2010

View article titled, Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption

Journal Articles

Minipressure sensor using AlGaN/GaN high electron mobility transistors

S. C. Hung, B. H. Chou, C. Y. Chang, C. F. Lo, K. H. Chen, Y. L. Wang, S. J. Pearton, Amir Dabiran, P. P. Chow, G. C. Chi, F. Ren

Appl. Phys. Lett. 94, 043903 (2009)

https://doi.org/10.1063/1.3072606

Published: January 2009

View article titled, Minipressure sensor using AlGaN/GaN high electron mobility transistors

Journal Articles

Density-dependent energy relaxation of hot electrons in InN epilayers

M. D. Yang, Y. W. Liu, J. L. Shen, C. W. Chen, G. C. Chi, T. Y. Lin, W. C. Chou, M. H. Lo, H. C. Kuo, T. C. Lu

J. Appl. Phys. 105, 013526 (2009)

https://doi.org/10.1063/1.3056383

Published: January 2009

View article titled, Density-dependent energy relaxation of hot electrons in InN epilayers

Journal Articles

Drift current dominated terahertz radiation from InN at low-density excitation

K. I. Lin, J. T. Tsai, T. S. Wang, J. S. Hwang, M. C. Chen, G. C. Chi

Appl. Phys. Lett. 93, 262102 (2008)

https://doi.org/10.1063/1.3056635

Published: December 2008

View article titled, Drift current dominated terahertz radiation from InN at low-density excitation

Journal Articles

Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

F. C. Tsao, J. Y. Chen, C. H. Kuo, G. C. Chi, C. J. Pan, P. J. Huang, C. J. Tun, B. J. Pong, T. H. Hsueh, C. Y. Chang, S. J. Pearton, F. Ren

Appl. Phys. Lett. 92, 203110 (2008)

https://doi.org/10.1063/1.2936090

Published: May 2008

View article titled, Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

Journal Articles

Detection of chloride ions using an integrated Ag ∕ Ag Cl electrode with Al Ga N ∕ Ga N high electron mobility transistors

S. C. Hung, Y. L. Wang, B. Hicks, S. J. Pearton, D. M. Dennis, F. Ren, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, G. C. Chi

Appl. Phys. Lett. 92, 193903 (2008)

https://doi.org/10.1063/1.2927372

Published: May 2008

View article titled, Detection of chloride ions using an integrated Ag ∕ Ag Cl electrode with Al Ga N ∕ Ga N high electron mobility transistors

Journal Articles

Low-temperature phase separation in GaN nanowires: An in situ x-ray investigation

S. Y. Wu, J.-Y. Ji, M. H. Chou, W.-H. Li, G. C. Chi

Appl. Phys. Lett. 92, 161901 (2008)

https://doi.org/10.1063/1.2913207

Published: April 2008

View article titled, Low-temperature phase separation in GaN nanowires: An <em>in situ</em> x-ray investigation

Journal Articles

Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

J. Y. Chen, G. C. Chi, P. J. Huang, M. Y. Chen, S. C. Hung, C. H. Nien, M. C. Chen, S. M. Lan, B. J. Pong, C. J. Pan, C. J. Tun, F. Ren, C. Y. Chang, S. J. Pearton

Appl. Phys. Lett. 92, 162103 (2008)

https://doi.org/10.1063/1.2916708

Published: April 2008

View article titled, Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

Journal Articles

Optical studies of InN epilayers on Si substrates with different buffer layers

M. D. Yang, J. L. Shen, M. C. Chen, C. C. Chiang, S. M. Lan, T. N. Yang, M. H. Lo, H. C. Kuo, T. C. Lu, P. J. Huang, S. C. Hung, G. C. Chi, W. C. Chou

J. Appl. Phys. 102, 113514 (2007)

https://doi.org/10.1063/1.2817826

Published: December 2007

View article titled, Optical studies of InN epilayers on Si substrates with different buffer layers

Journal Articles

Dislocation reduction in GaN with multiple Mg x N y ∕ Ga N buffer layers by metal organic chemical vapor deposition

C. J. Tun, C. H. Kuo, Y. K. Fu, C. W. Kuo, C. J. Pan, G. C. Chi

Appl. Phys. Lett. 90, 212109 (2007)

https://doi.org/10.1063/1.2742590

Published: May 2007

View article titled, Dislocation reduction in GaN with multiple Mg x N y ∕ Ga N buffer layers by metal organic chemical vapor deposition

Journal Articles

Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

K. J. Chang, J. Y. Chang, M. C. Chen, S. M. Lahn, C. J. Kao, Z. Y. Li, W. Y. Uen, G. C. Chi

J. Vac. Sci. Technol. A 25, 701–705 (2007)

https://doi.org/10.1116/1.2740293

Published: May 2007

View article titled, Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

Journal Articles

Nitride-based near-ultraviolet light emitting diodes with meshed p ‐ Ga N

C. H. Kuo, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu, G. C. Chi

Appl. Phys. Lett. 90, 142115 (2007)

https://doi.org/10.1063/1.2720347

Published: April 2007

View article titled, Nitride-based near-ultraviolet light emitting diodes with meshed p ‐ Ga N

Journal Articles

Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi

Appl. Phys. Lett. 89, 201104 (2006)

https://doi.org/10.1063/1.2387941

Published: November 2006

View article titled, Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Journal Articles

Nitride-based light-emitting diodes with p - Al In Ga N surface layers prepared at various temperatures

C. H. Kuo, C. W. Kuo, C. M. Chen, B. J. Pong, G. C. Chi

Appl. Phys. Lett. 89, 191112 (2006)

https://doi.org/10.1063/1.2386914

Published: November 2006

View article titled, Nitride-based light-emitting diodes with p - Al In Ga N surface layers prepared at various temperatures

Journal Articles

Improved performance of planar GaN-based p - i - n photodetectors with Mg-implanted isolation ring

M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, G. C. Chi

Appl. Phys. Lett. 89, 183509 (2006)

https://doi.org/10.1063/1.2372767

Published: November 2006

View article titled, Improved performance of planar GaN-based p - i - n photodetectors with Mg-implanted isolation ring

Journal Articles

Planar GaN p - i - n photodiodes with n + -conductive channel formed by Si implantation

M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, G. C. Chi

Appl. Phys. Lett. 88, 203508 (2006)

https://doi.org/10.1063/1.2206687

Published: May 2006

View article titled, Planar GaN p - i - n photodiodes with n + -conductive channel formed by Si implantation

Journal Articles

Comparison of low-temperature GaN, Si O 2 , and Si N x as gate insulators on Al Ga N ∕ Ga N heterostructure field-effect transistors

C. J. Kao, M. C. Chen, C. J. Tun, G. C. Chi, J. K. Sheu, W. C. Lai, M. L. Lee, F. Ren, S. J. Pearton

J. Appl. Phys. 98, 064506 (2005)

https://doi.org/10.1063/1.2058173

Published: September 2005

View article titled, Comparison of low-temperature GaN, Si O 2 , and Si N x as gate insulators on Al Ga N ∕ Ga N heterostructure field-effect transistors

Journal Articles

Rectifying characteristics of W Si 0.8 – Ga N Schottky barrier diodes with a GaN cap layer grown at low temperature

J. K. Sheu, M. L. Lee, W. C. Lai, H. C. Tseng, G. C. Chi

J. Appl. Phys. 98, 036106 (2005)

https://doi.org/10.1063/1.2006220

Published: August 2005

View article titled, Rectifying characteristics of W Si 0.8 – Ga N Schottky barrier diodes with a GaN cap layer grown at low temperature

NARROW

Topics

Oxygen sensors made by monolayer graphene under room temperature

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption

Minipressure sensor using AlGaN/GaN high electron mobility transistors

Density-dependent energy relaxation of hot electrons in InN epilayers

Drift current dominated terahertz radiation from InN at low-density excitation

Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

Detection of chloride ions using an integrated Ag ∕ Ag Cl electrode with Al Ga N ∕ Ga N high electron mobility transistors

Low-temperature phase separation in GaN nanowires: An in situ x-ray investigation

Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy

Optical studies of InN epilayers on Si substrates with different buffer layers

Dislocation reduction in GaN with multiple Mg x N y ∕ Ga N buffer layers by metal organic chemical vapor deposition

Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

Nitride-based near-ultraviolet light emitting diodes with meshed p ‐ Ga N

Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Nitride-based light-emitting diodes with p - Al In Ga N surface layers prepared at various temperatures

Improved performance of planar GaN-based p - i - n photodetectors with Mg-implanted isolation ring

Planar GaN p - i - n photodiodes with n + -conductive channel formed by Si implantation

Comparison of low-temperature GaN, Si O 2 , and Si N x as gate insulators on Al Ga N ∕ Ga N heterostructure field-effect transistors

Rectifying characteristics of W Si 0.8 – Ga N Schottky barrier diodes with a GaN cap layer grown at low temperature

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