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Journal Articles

White-light-induced disruption of nanoscale conducting filament in hafnia

Y. Zhou, K. S. Yew, D. S. Ang, T. Kawashima, M. K. Bera, H. Z. Zhang, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 072107 (2015)
https://doi.org/10.1063/1.4929324
Published: August 2015
View article titled, White-light-induced disruption of nanoscale conducting filament in hafnia
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Includes: Supplementary data
Journal Articles

Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

M. T. Ghoneim, A. Kutbee, F. Ghodsi Nasseri, G. Bersuker, M. M. Hussain
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 234104 (2014)
https://doi.org/10.1063/1.4882647
Published: June 2014
View article titled, Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric
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Journal Articles

Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation

Ming Lei, J. Price, Wei-E Wang, Man Hoi Wong, Ravi Droopad, Paul Kirsch, G. Bersuker, M. C. Downer
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 152103 (2013)
https://doi.org/10.1063/1.4802082
Published: April 2013
View article titled, Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation
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Journal Articles

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

M. Lanza, G. Bersuker, M. Porti, E. Miranda, M. Nafría, X. Aymerich
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 193502 (2012)
https://doi.org/10.1063/1.4765342
Published: November 2012
View article titled, Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
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Journal Articles

Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

D. Veksler, P. Nagaiah, T. Chidambaram, R. Cammarere, V. Tokranov, M. Yakimov, Y.-T. Chen, J. Huang, N. Goel, J. Oh, G. Bersuker, C. Hobbs, P. D. Kirsch, S. Oktyabrsky
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 054504 (2012)
https://doi.org/10.1063/1.4749403
Published: September 2012
View article titled, Quantification of interfacial state density (D<sub>it</sub>) at the high-k/III-V interface based on Hall effect measurements
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Journal Articles

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafría, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 123508 (2012)
https://doi.org/10.1063/1.3697648
Published: March 2012
View article titled, Grain boundaries as preferential sites for resistive switching in the HfO<sub>2</sub> resistive random access memory structures
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Journal Articles

Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)

Ming Lei, J. H. Yum, J. Price, Todd W. Hudnall, C. W. Bielawski, S. K. Banerjee, P. S. Lysaght, G. Bersuker, M. C. Downer
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 122906 (2012)
https://doi.org/10.1063/1.3697646
Published: March 2012
View article titled, Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)
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Journal Articles

Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry

J. Price, G. Bersuker, P. S. Lysaght
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 043507 (2012)
https://doi.org/10.1063/1.3684605
Published: February 2012
View article titled, Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry
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Journal Articles

Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

J. H. Yum, G. Bersuker, J. Oh, S. K. Banerjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 053501 (2012)
https://doi.org/10.1063/1.3679720
Published: January 2012
View article titled, Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability
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Journal Articles

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafría
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 124518 (2011)
https://doi.org/10.1063/1.3671565
Published: December 2011
View article titled, Metal oxide resistive memory switching mechanism based on conductive filament properties
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Journal Articles

Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 239901 (2011)
https://doi.org/10.1063/1.3666227
Published: December 2011
View article titled, Publisher’s Note: “Degradation of polycrystalline HfO<sub>2</sub>-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]
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Journal Articles

Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

M. A. Negara, D. Veksler, J. Huang, G. Ghibaudo, P. K. Hurley, G. Bersuker, N. Goel, P. Kirsch
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 232101 (2011)
https://doi.org/10.1063/1.3665033
Published: December 2011
View article titled, Analysis of effective mobility and hall effect mobility in high-<em>k</em> based In<sub>0.75</sub>Ga<sub>0.25</sub>As metal-oxide-semiconductor high-electron-mobility transistors
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Journal Articles

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 103510 (2011)
https://doi.org/10.1063/1.3637633
Published: September 2011
View article titled, Degradation of polycrystalline HfO<sub>2</sub>-based gate dielectrics under nanoscale electrical stress
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Journal Articles

Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices

J. H. Yum, T. Akyol, D. A. Ferrer, J. C. Lee, S. K. Banerjee, M. Lei, M. Downer, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 29, 061501 (2011)
https://doi.org/10.1116/1.3628546
Published: September 2011
View article titled, Comparison of the self-cleaning effects and electrical characteristics of BeO and Al<sub>2</sub>O<sub>3</sub> deposited as an interface passivation layer on GaAs MOS devices
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Journal Articles

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

J. H. Yum, T. Akyol, M. Lei, D. A. Ferrer, Todd. W. Hudnall, M. Downer, C. W. Bielawski, G. Bersuker, J. C. Lee, S. K. Banerjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 033502 (2011)
https://doi.org/10.1063/1.3614446
Published: July 2011
View article titled, Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric
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Journal Articles

Charge trapping defects in Si / SiO 2 / Hf ( 1 − x ) Si x O 2 film stacks characterized by spectroscopic second-harmonic generation

J. Price, Ming Lei, P. S. Lysaght, G. Bersuker, M. C. Downer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 04D101 (2011)
https://doi.org/10.1116/1.3591433
Published: May 2011
View article titled, Charge trapping defects in Si / SiO 2 / Hf ( 1 − x ) Si x O 2 film stacks characterized by spectroscopic second-harmonic generation
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Journal Articles

On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 193501 (2011)
https://doi.org/10.1063/1.3588255
Published: May 2011
View article titled, On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors
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Journal Articles

Work function engineering in silicides: Chlorine doping in NiSi

Alexander Slepko, Alexander A. Demkov, W.-Y. Loh, P. Majhi, G. Bersuker
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 083703 (2011)
https://doi.org/10.1063/1.3573481
Published: April 2011
View article titled, Work function engineering in silicides: Chlorine doping in NiSi
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Journal Articles

Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

J. H. Yum, T. Akyol, M. Lei, T. Hudnall, G. Bersuker, M. Downer, C. W. Bielawski, J. C. Lee, S. K. Banerjee
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 064101 (2011)
https://doi.org/10.1063/1.3553872
Published: March 2011
View article titled, Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices
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Journal Articles

Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy

V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, G. Bersuker
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AB02 (2011)
https://doi.org/10.1116/1.3532945
Published: January 2011
View article titled, Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy
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