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Journal Articles

The effects of different anode manufacturing methods on deep levels in 4H-SiC p⁺n diodes

G. Alfieri, S. Bolat, R. Nipoti

J. Appl. Phys. 135, 235302 (2024)

https://doi.org/10.1063/5.0205559

Published: June 2024

View article titled, The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes

Journal Articles

Deep level study of chlorine-based dry etched β − Ga₂O₃

G. Alfieri, A. Mihaila, P. Godignon, J. B. Varley, L. Vines

J. Appl. Phys. 130, 025701 (2021)

https://doi.org/10.1063/5.0050416

Published: July 2021

View article titled, Deep level study of chlorine-based dry etched β − Ga2O3

Journal Articles

Defect energy levels in carbon implanted n-type homoepitaxial GaN

G. Alfieri, V. K. Sundaramoorthy

J. Appl. Phys. 126, 125301 (2019)

https://doi.org/10.1063/1.5109237

Published: September 2019

View article titled, Defect energy levels in carbon implanted n-type homoepitaxial GaN

Journal Articles

Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

D. Dutta, D. S. De, D. Fan, S. Roy, G. Alfieri, M. Camarda, M. Amsler, J. Lehmann, H. Bartolf, S. Goedecker, T. A. Jung

Appl. Phys. Lett. 115, 101601 (2019)

https://doi.org/10.1063/1.5112779

Published: September 2019

View article titled, Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

Includes: Supplementary data

Journal Articles

Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC

L. Knoll, L. Kranz, G. Alfieri

J. Appl. Phys. 125, 205302 (2019)

https://doi.org/10.1063/1.5090261

Published: May 2019

View article titled, Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC

Journal Articles

Generation and metastability of deep level states in β-Ga₂O₃ exposed to reverse bias at elevated temperatures

M. E. Ingebrigtsen, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, L. Vines

J. Appl. Phys. 125, 185706 (2019)

https://doi.org/10.1063/1.5088655

Published: May 2019

View article titled, Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures

Journal Articles

Impact of proton irradiation on conductivity and deep level defects in β -Ga₂O₃

M. E. Ingebrigtsen, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, U. Badstübner, A. Perron, L. Vines, J. B. Varley

APL Mater. 7, 022510 (2019)

https://doi.org/10.1063/1.5054826

Published: December 2018

View article titled, Impact of proton irradiation on conductivity and deep level defects in β -Ga2O3

Includes: Supplementary data

Journal Articles

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

G. Alfieri, V. K. Sundaramoorthy, R. Micheletto

J. Appl. Phys. 123, 205303 (2018)

https://doi.org/10.1063/1.5029254

Published: May 2018

View article titled, Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

Journal Articles

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

G. Alfieri, L. Knoll, L. Kranz, V. Sundaramoorthy

J. Appl. Phys. 123, 175304 (2018)

https://doi.org/10.1063/1.5023337

Published: May 2018

View article titled, The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

Journal Articles

Iron and intrinsic deep level states in Ga₂O₃

M. E. Ingebrigtsen, J. B. Varley, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, U. Badstübner, L. Vines

Appl. Phys. Lett. 112, 042104 (2018)

https://doi.org/10.1063/1.5020134

Published: January 2018

View article titled, Iron and intrinsic deep level states in Ga2O3

Journal Articles

Point defects in Ga-implanted SiC: Experiment and theory

G. Alfieri, L. Knoll, L. Kranz, R. Minamisawa, V. Sundaramoorthy

J. Appl. Phys. 121, 245703 (2017)

https://doi.org/10.1063/1.4990423

Published: June 2017

View article titled, Point defects in Ga-implanted SiC: Experiment and theory

Journal Articles

Electronic properties of substitutional impurities in InGaN monolayer quantum wells

G. Alfieri, T. Tsutsumi, R. Micheletto

Appl. Phys. Lett. 106, 192102 (2015)

https://doi.org/10.1063/1.4919787

Published: May 2015

View article titled, Electronic properties of substitutional impurities in InGaN monolayer quantum wells

Journal Articles

Detection of minority carrier traps in p-type 4H-SiC

G. Alfieri, T. Kimoto

Appl. Phys. Lett. 104, 092105 (2014)

https://doi.org/10.1063/1.4867200

Published: March 2014

View article titled, Detection of minority carrier traps in p-type 4H-SiC

Journal Articles

Ab initio prediction of SiC nanotubes with negative strain energy

G. Alfieri, T. Kimoto

Appl. Phys. Lett. 104, 033107 (2014)

https://doi.org/10.1063/1.4863500

Published: January 2014

View article titled, Ab initio prediction of SiC nanotubes with negative strain energy

Journal Articles

Resolving the E H 6 / 7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

G. Alfieri, T. Kimoto

Appl. Phys. Lett. 102, 152108 (2013)

https://doi.org/10.1063/1.4802248

Published: April 2013

View article titled, Resolving the E H 6 / 7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Journal Articles

First-principles study of Cl diffusion in cubic SiC

G. Alfieri, T. Kimoto

J. Appl. Phys. 113, 133706 (2013)

https://doi.org/10.1063/1.4799194

Published: April 2013

View article titled, First-principles study of Cl diffusion in cubic SiC

Journal Articles

Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

G. Alfieri, T. Kimoto

J. Appl. Phys. 112, 063717 (2012)

https://doi.org/10.1063/1.4754854

Published: September 2012

View article titled, Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

Journal Articles

Theoretical study of Cl-related defect complexes in cubic SiC

G. Alfieri, T. Kimoto

J. Appl. Phys. 111, 103705 (2012)

https://doi.org/10.1063/1.4718030

Published: May 2012

View article titled, Theoretical study of Cl-related defect complexes in cubic SiC

Journal Articles

Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations

G. Alfieri, T. Kimoto

Appl. Phys. Lett. 98, 123102 (2011)

https://doi.org/10.1063/1.3567535

Published: March 2011

View article titled, Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations

Journal Articles

Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC

S. Sasaki, K. Kawahara, G. Feng, G. Alfieri, T. Kimoto

J. Appl. Phys. 109, 013705 (2011)

https://doi.org/10.1063/1.3528124

Published: January 2011

View article titled, Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC

NARROW

Topics

The effects of different anode manufacturing methods on deep levels in 4H-SiC p⁺n diodes

Deep level study of chlorine-based dry etched β − Ga₂O₃

Defect energy levels in carbon implanted n-type homoepitaxial GaN

Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC

Generation and metastability of deep level states in β-Ga₂O₃ exposed to reverse bias at elevated temperatures

Impact of proton irradiation on conductivity and deep level defects in β -Ga₂O₃

Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

Iron and intrinsic deep level states in Ga₂O₃

Point defects in Ga-implanted SiC: Experiment and theory

Electronic properties of substitutional impurities in InGaN monolayer quantum wells

Detection of minority carrier traps in p-type 4H-SiC

Ab initio prediction of SiC nanotubes with negative strain energy

Resolving the E H 6 / 7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

First-principles study of Cl diffusion in cubic SiC

Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

Theoretical study of Cl-related defect complexes in cubic SiC

Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations

Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC

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