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Journal Articles

Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires

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B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, G. Abstreiter, G. Koblmüller, J. J. Finley
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 071107 (2016)
https://doi.org/10.1063/1.4942506
Published: February 2016
View articletitled, Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
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Journal Articles

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

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J. Treu, M. Speckbacher, K. Saller, S. Morkötter, M. Döblinger, X. Xu, H. Riedl, G. Abstreiter, J. J. Finley, G. Koblmüller
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 053110 (2016)
https://doi.org/10.1063/1.4941407
Published: February 2016
View articletitled, Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
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Journal Articles

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

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T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmüller, J. J. Finley
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 011108 (2016)
https://doi.org/10.1063/1.4939549
Published: January 2016
View articletitled, Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
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Journal Articles

Erratum: “Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires” [Appl. Phys. Lett. 105 , 033111 (2014)]

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D. Rudolph, L. Schweickert, S. Morkötter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmüller
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 069903 (2014)
https://doi.org/10.1063/1.4892964
Published: August 2014
View articletitled, Erratum: “Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires” [Appl. Phys. Lett. 105 , 033111 (2014)]
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Journal Articles

Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires

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D. Rudolph, L. Schweickert, S. Morkötter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmüller
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 033111 (2014)
https://doi.org/10.1063/1.4891427
Published: July 2014
View articletitled, Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
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Journal Articles

Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces

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A. Bora, A. Pathak, K.-C. Liao, M. I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 241602 (2013)
https://doi.org/10.1063/1.4811441
Published: June 2013
View articletitled, Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces
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Includes: Supplementary data
Journal Articles

Diameter dependent optical emission properties of InAs nanowires grown on Si

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G. Koblmüller, K. Vizbaras, S. Hertenberger, S. Bolte, D. Rudolph, J. Becker, M. Döblinger, M.-C. Amann, J. J. Finley, G. Abstreiter
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 053103 (2012)
https://doi.org/10.1063/1.4739001
Published: July 2012
View articletitled, Diameter dependent optical emission properties of InAs nanowires grown on Si
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Journal Articles

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)

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S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Döblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, M.-C. Amann, G. Abstreiter, G. Koblmüller
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 043116 (2012)
https://doi.org/10.1063/1.4738769
Published: July 2012
View articletitled, High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
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Journal Articles

Few electron double quantum dot in an isotopically purified 28Si quantum well

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A. Wild, J. Kierig, J. Sailer, J. W. Ager, III, E. E. Haller, G. Abstreiter, S. Ludwig, D. Bougeard
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 143110 (2012)
https://doi.org/10.1063/1.3701588
Published: April 2012
View articletitled, Few electron double quantum dot in an isotopically purified 28Si quantum well
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Journal Articles

Single Material Band Gap Engineering in GaAs Nanowires

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D. Spirkoska, A. Efros, S. Conesa‐Boj, J. R. Morante, J. Arbiol, A. Fontcuberta i Morral, G. Abstreiter
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 587–588 (2011)
https://doi.org/10.1063/1.3666516
Published: December 2011
View articletitled, Single Material Band Gap Engineering in GaAs Nanowires
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Journal Articles

Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

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J. G. Keizer, M. Bozkurt, J. Bocquel, T. Mano, T. Noda, K. Sakoda, E. C. Clark, M. Bichler, G. Abstreiter, J. J. Finley, W. Lu, T. Rohel, H. Folliot, N. Bertru, P. M. Koenraad
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 102413 (2011)
https://doi.org/10.1063/1.3577960
Published: May 2011
View articletitled, Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy
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Journal Articles

Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

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S. Hertenberger, D. Rudolph, S. Bolte, M. Döblinger, M. Bichler, D. Spirkoska, J. J. Finley, G. Abstreiter, G. Koblmüller
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 123114 (2011)
https://doi.org/10.1063/1.3567496
Published: March 2011
View articletitled, Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
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Journal Articles

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

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S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmüller
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 114316 (2010)
https://doi.org/10.1063/1.3525610
Published: December 2010
View articletitled, Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
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Journal Articles

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

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M. Stallhofer, M. Seifert, M. V. Hauf, G. Abstreiter, M. Stutzmann, J. A. Garrido, A. W. Holleitner
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 111107 (2010)
https://doi.org/10.1063/1.3487785
Published: September 2010
View articletitled, Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
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Journal Articles

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots

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F. Klotz, V Jovanov, J. Kierig, E. C. Clark, D. Rudolph, D. Heiss, M. Bichler, G. Abstreiter, M. S. Brandt, J. J. Finley
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 053113 (2010)
https://doi.org/10.1063/1.3309684
Published: February 2010
View articletitled, Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots
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Journal Articles

Magnetic‐field reentrant wave function hybridization in stacked one‐dimensional electron systems

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S. S. Buchholz, P. S. Zapp, S. F. Fischer, U. Kunze, D. Schuh, G. Abstreiter
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 353–355 (2010)
https://doi.org/10.1063/1.3295449
Published: January 2010
View articletitled, Magnetic‐field reentrant wave function hybridization in stacked one‐dimensional electron systems
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Journal Articles

Photocurrent and photoconductance properties of a GaAs nanowire

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S. Thunich, L. Prechtel, D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral, A. W. Holleitner
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 083111 (2009)
https://doi.org/10.1063/1.3193540
Published: August 2009
View articletitled, Photocurrent and photoconductance properties of a GaAs nanowire
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Journal Articles

Selective optical charge generation, storage, and readout in a single self-assembled quantum dot

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D. Heiss, V. Jovanov, M. Caesar, M. Bichler, G. Abstreiter, J. J. Finley
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 072108 (2009)
https://doi.org/10.1063/1.3079658
Published: February 2009
View articletitled, Selective optical charge generation, storage, and readout in a single self-assembled quantum dot
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Journal Articles

Nanometer-scale sharpness in corner-overgrown heterostructures

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L. Steinke, P. Cantwell, D. Zakharov, E. Stach, N. J. Zaluzec, A. Fontcuberta i Morral, M. Bichler, G. Abstreiter, M. Grayson
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 193117 (2008)
https://doi.org/10.1063/1.2988526
Published: November 2008
View articletitled, Nanometer-scale sharpness in corner-overgrown heterostructures
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Journal Articles

Silicon photonic crystal nanostructures for refractive index sensing

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D. F. Dorfner, T. Hürlimann, T. Zabel, L. H. Frandsen, G. Abstreiter, J. J. Finley
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 181103 (2008)
https://doi.org/10.1063/1.3009203
Published: November 2008
View articletitled, Silicon photonic crystal nanostructures for refractive index sensing
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