Page 1 | Search Results | AIP Publishing

1-20 of 33

Sort by

Sort Order Select

Journal Articles

Investigation on interface charges in SiN/Al_xGa_1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Bledion Rrustemi, Marie-Anne Jaud, François Triozon, Clémentine Piotrowicz, William Vandendaele, Charles Leroux, Cyrille Le Royer, Jérôme Biscarrat, Gérard Ghibaudo

J. Appl. Phys. 130, 105704 (2021)

https://doi.org/10.1063/5.0058019

Published: September 2021

View articletitled, Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Journal Articles

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet

Appl. Phys. Lett. 116, 243502 (2020)

https://doi.org/10.1063/5.0007100

Published: June 2020

View articletitled, Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Includes: Supplementary data

Journal Articles

Impact of low thermal processes on reliability of high-k/metal gate stacks

Artemisia Tsiara, Xavier Garros, Cao-Minh Vincent Lu, Claire Fenouillet-Béranger, Gerard Ghibaudo

J. Vac. Sci. Technol. B 35, 01A114 (2017)

https://doi.org/10.1116/1.4973905

Published: January 2017

View articletitled, Impact of low thermal processes on reliability of high-k/metal gate stacks

Journal Articles

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Mohammed Benwadih, J. A. Chroboczek, Gérard Ghibaudo, Romain Coppard, Dominique Vuillaume

J. Appl. Phys. 117, 055707 (2015)

https://doi.org/10.1063/1.4907681

Published: February 2015

View articletitled, Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Journal Articles

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae-Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Appl. Phys. Lett. 105, 263505 (2014)

https://doi.org/10.1063/1.4905366

Published: December 2014

View articletitled, Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Journal Articles

Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park, Dae-Young Jeon, Laurent Montes, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Appl. Phys. Lett. 105, 213504 (2014)

https://doi.org/10.1063/1.4902549

Published: November 2014

View articletitled, Less mobility degradation induced by transverse electric-field in junctionless transistors

Includes: Supplementary data

Journal Articles

Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Yong Xu, Chuan Liu, Paul Seyram K. Amegadze, Won-Tae Park, Dang Xuan Long, Takeo Minari, Francis Balestra, Gerard Ghibaudo, Yong-Young Noh

Appl. Phys. Lett. 105, 133505 (2014)

https://doi.org/10.1063/1.4897003

Published: September 2014

View articletitled, Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Journal Articles

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae-Young Jeon, So Jeong Park, Mireille Mouis, Min-Kyu Joo, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Appl. Phys. Lett. 104, 263510 (2014)

https://doi.org/10.1063/1.4886139

Published: July 2014

View articletitled, Separation of surface accumulation and bulk neutral channel in junctionless transistors

Journal Articles

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mohammed Benwadih, J. A. Chroboczek, Gérard Ghibaudo, Romain Coppard, Dominique Vuillaume

J. Appl. Phys. 115, 214501 (2014)

https://doi.org/10.1063/1.4880163

Published: June 2014

View articletitled, Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Journal Articles

Impact of trap localization on low-frequency noise in nanoscale device

Jae Woo Lee, Wan Soo Yun, Gérard Ghibaudo

J. Appl. Phys. 115, 194501 (2014)

https://doi.org/10.1063/1.4878456

Published: May 2014

View articletitled, Impact of trap localization on low-frequency noise in nanoscale device

Includes: Supplementary data

Journal Articles

Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104 , 013301 (2014)]

Chuan Liu, Yong Xu, Gerard Ghibaudo, Xubing Lu, Takeo Minari, Yong-Young Noh

Appl. Phys. Lett. 104, 079902 (2014)

https://doi.org/10.1063/1.4866287

Published: February 2014

View articletitled, Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104 , 013301 (2014)]

Journal Articles

Physics of the frequency response of rectifying organic Schottky diodes

Stéphane Altazin, Raphaël Clerc, Romain Gwoziecki, Jean-Marie Verilhac, Damien Boudinet, Georges Pananakakis, Gérard Ghibaudo, Isabelle Chartier, Romain Coppard

J. Appl. Phys. 115, 064509 (2014)

https://doi.org/10.1063/1.4865739

Published: February 2014

View articletitled, Physics of the frequency response of rectifying organic Schottky diodes

Journal Articles

Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Chuan Liu, Yong Xu, Gerard Ghibaudo, Xubing Lu, Takeo Minari, Yong-Young Noh

Appl. Phys. Lett. 104, 013301 (2014)

https://doi.org/10.1063/1.4860958

Published: January 2014

View articletitled, Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Journal Articles

Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Min-Kyu Joo, Mireille Mouis, Dae-Young Jeon, Gyu-Tae Kim, Un Jeong Kim, Gérard Ghibaudo

J. Appl. Phys. 114, 154503 (2013)

https://doi.org/10.1063/1.4825221

Published: October 2013

View articletitled, Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Journal Articles

Joule's law for organic transistors exploration: Case of contact resistance

Yong Xu, Chuan Liu, Yun Li, Takeo Minari, Peter Darmawan, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi

J. Appl. Phys. 113, 064507 (2013)

https://doi.org/10.1063/1.4792066

Published: February 2013

View articletitled, Joule's law for organic transistors exploration: Case of contact resistance

Journal Articles

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO₂ nanowire field-effect transistors

Min-Kyu Joo, Junghwan Huh, Mireille Mouis, So Jeong Park, Dae-Young Jeon, Doyoung Jang, Jong-Heun Lee, Gyu-Tae Kim, Gérard Ghibaudo

Appl. Phys. Lett. 102, 053114 (2013)

https://doi.org/10.1063/1.4788708

Published: February 2013

View articletitled, Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Journal Articles

Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Kiichi Tachi, Gyu Tae Kim, Thomas Ernst, Gérard Ghibaudo

Appl. Phys. Lett. 101, 143502 (2012)

https://doi.org/10.1063/1.4756910

Published: October 2012

View articletitled, Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Journal Articles

Carrier mobility in organic field-effect transistors

Yong Xu, Mohamed Benwadih, Romain Gwoziecki, Romain Coppard, Takeo Minari, Chuan Liu, Kazuhito Tsukagoshi, Jan Chroboczek, Francis Balestra, Gerard Ghibaudo

J. Appl. Phys. 110, 104513 (2011)

https://doi.org/10.1063/1.3662955

Published: November 2011

View articletitled, Carrier mobility in organic field-effect transistors

Journal Articles

Modeling of static electrical properties in organic field-effect transistors

Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, Romain Gwoziecki, Romain Coppard, Mohamed Benwadih, Jan Chroboczek, Francis Balestra, Gerard Ghibaudo

J. Appl. Phys. 110, 014510 (2011)

https://doi.org/10.1063/1.3602997

Published: July 2011

View articletitled, Modeling of static electrical properties in organic field-effect transistors

Journal Articles

Theoretical analysis of carrier mobility in organic field-effect transistors

Yong Xu, Francis Balestra, Gerard Ghibaudo

Appl. Phys. Lett. 98, 233302 (2011)

https://doi.org/10.1063/1.3599485

Published: June 2011

View articletitled, Theoretical analysis of carrier mobility in organic field-effect transistors

Update search

NARROW

Format

Collections

Topics

Subjects

Journal

Article Type

Issue Section

Date

Availability

Investigation on interface charges in SiN/Al_xGa_1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Impact of low thermal processes on reliability of high-k/metal gate stacks

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Less mobility degradation induced by transverse electric-field in junctionless transistors

Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Impact of trap localization on low-frequency noise in nanoscale device

Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104 , 013301 (2014)]

Physics of the frequency response of rectifying organic Schottky diodes

Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Joule's law for organic transistors exploration: Case of contact resistance

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO₂ nanowire field-effect transistors

Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Carrier mobility in organic field-effect transistors

Modeling of static electrical properties in organic field-effect transistors

Theoretical analysis of carrier mobility in organic field-effect transistors

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only