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Journal Articles

Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure

L. Malikova, Fred H. Pollak, R. A. Masut, P. Desjardins, Lev G. Mourokh

J. Appl. Phys. 94, 4995–4998 (2003)

https://doi.org/10.1063/1.1609651

Published: October 2003

View article titled, Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure

Journal Articles

Band offset determination of Zn 0.53 Cd 0.47 Se/Zn 0.29 Cd 0.24 Mg 0.47 Se

Martı́n Muñoz, Hong Lu, Xuecong Zhou, Maria C. Tamargo, Fred H. Pollak

Appl. Phys. Lett. 83, 1995–1997 (2003)

https://doi.org/10.1063/1.1606875

Published: September 2003

View article titled, Band offset determination of Zn 0.53 Cd 0.47 Se/Zn 0.29 Cd 0.24 Mg 0.47 Se

Journal Articles

Contactless electroreflectance, in the range of 20 K

Y. S. Huang, Fred H. Pollak, S. S. Park, K. Y. Lee, H. Morkoç

J. Appl. Phys. 94, 899–903 (2003)

https://doi.org/10.1063/1.1582230

Published: July 2003

View article titled, Contactless electroreflectance, in the range of 20 K <T<300 K , of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

Journal Articles

Optical constants of cubic GaN/GaAs(001): Experiment and modeling

Martı́n Muñoz, Y. S. Huang, Fred H. Pollak, Hui Yang

J. Appl. Phys. 93, 2549–2553 (2003)

https://doi.org/10.1063/1.1540725

Published: March 2003

View article titled, Optical constants of cubic GaN/GaAs(001): Experiment and modeling

Journal Articles

Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

J. S. Liang, S. D. Wang, Y. S. Huang, L. Malikova, Fred H. Pollak, J. P. Debray, R. Hoffman, A. Amtout, R. A. Stall

J. Appl. Phys. 93, 1874–1878 (2003)

https://doi.org/10.1063/1.1538323

Published: February 2003

View article titled, Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Journal Articles

Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films

V. V. Chaldyshev, Fred H. Pollak, M. Pophristic, S. P. Guo, I. Ferguson

J. Appl. Phys. 92, 6601–6606 (2002)

https://doi.org/10.1063/1.1519342

Published: December 2002

View article titled, Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films

Journal Articles

Optical constants of In 0.53 Ga 0.47 As/InP : Experiment and modeling

Martı́n Muñoz, Todd M. Holden, Fred H. Pollak, Mathias Kahn, Dan Ritter, Leeor Kronik, Guy M. Cohen

J. Appl. Phys. 92, 5878–5885 (2002)

https://doi.org/10.1063/1.1515374

Published: November 2002

View article titled, Optical constants of In 0.53 Ga 0.47 As/InP : Experiment and modeling

Journal Articles

Thermal conductivity of GaN films: Effects of impurities and dislocations

J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florescu, Fred H. Pollak

J. Appl. Phys. 92, 2534–2539 (2002)

https://doi.org/10.1063/1.1497704

Published: September 2002

View article titled, Thermal conductivity of GaN films: Effects of impurities and dislocations

Journal Articles

Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure

S. D. Wang, J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, K. K. Tiong, Fred H. Pollak

J. Appl. Phys. 92, 2350–2353 (2002)

https://doi.org/10.1063/1.1497697

Published: September 2002

View article titled, Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure

Journal Articles

Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Y. S. Huang, L. Malikova, Fred H. Pollak, J.-P. Debray, R. Hoffman, A. Amtout, R. A. Stall

J. Appl. Phys. 91, 6203–6205 (2002)

https://doi.org/10.1063/1.1467396

Published: May 2002

View article titled, Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Journal Articles

Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

J. S. Liang, S. D. Wang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, D. Y. Lin, Fred H. Pollak

Appl. Phys. Lett. 80, 752–754 (2002)

https://doi.org/10.1063/1.1445463

Published: February 2002

View article titled, Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

Journal Articles

Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001)

D. I. Florescu, Fred H. Pollak, William B. Lanford, Farid Khan, I. Adesida, R. J. Molnar

J. Appl. Phys. 91, 1277–1280 (2002)

https://doi.org/10.1063/1.1428798

Published: February 2002

View article titled, Ion-beam processing effects on the thermal conductivity of <em>n</em>-GaN/sapphire (0001)

Journal Articles

High spatial resolution thermal conductivity of bulk ZnO (0001)

D. I. Florescu, L. G. Mourokh, Fred H. Pollak, D. C. Look, G. Cantwell, X. Li

J. Appl. Phys. 91, 890–892 (2002)

https://doi.org/10.1063/1.1426234

Published: January 2002

View article titled, High spatial resolution thermal conductivity of bulk ZnO (0001)

Journal Articles

Effect of dislocations on thermal conductivity of GaN layers

D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florescu, Fred H. Pollak

Appl. Phys. Lett. 79, 4316–4318 (2001)

https://doi.org/10.1063/1.1427153

Published: December 2001

View article titled, Effect of dislocations on thermal conductivity of GaN layers

Journal Articles

Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

D. Y. Lin, Y. S. Huang, T. S. Shou, K. K. Tiong, Fred H. Pollak

J. Appl. Phys. 90, 6421–6427 (2001)

https://doi.org/10.1063/1.1416854

Published: December 2001

View article titled, Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

Journal Articles

Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, P. W. Li, Fred H. Pollak

Appl. Phys. Lett. 79, 3227–3229 (2001)

https://doi.org/10.1063/1.1418027

Published: November 2001

View article titled, Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

Journal Articles

Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure

Y. T. Cheng, Y. S. Huang, D. Y. Lin, K. K. Tiong, Fred H. Pollak, K. R. Evans

Appl. Phys. Lett. 79, 949–951 (2001)

https://doi.org/10.1063/1.1392974

Published: August 2001

View article titled, Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure

Journal Articles

Comment on “Photoreflectance study in the E 1 and E 1 +Δ 1 transition regions of CdTe” [J. Appl. Phys. 87 , 7360 (2000)]

Martin Muñoz, Fred H. Pollak, Todd Holden

J. Appl. Phys. 89, 3070 (2001)

https://doi.org/10.1063/1.1343515

Published: March 2001

View article titled, Comment on “Photoreflectance study in the E 1 and E 1 +Δ 1 transition regions of CdTe” [J. Appl. Phys. 87 , 7360 (2000)]

Journal Articles

Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice

Lev G. Mourokh, L. Malikova, Fred H. Pollak, B. Q. Shi, C. Nguyen

J. Appl. Phys. 89, 2500–2502 (2001)

https://doi.org/10.1063/1.1340001

Published: February 2001

View article titled, Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice

Journal Articles

High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n - GaN/sapphire (0001): Doping dependence

D. I. Florescu, V. M. Asnin, Fred H. Pollak, R. J. Molnar, C. E. C. Wood

J. Appl. Phys. 88, 3295–3300 (2000)

https://doi.org/10.1063/1.1289072

Published: September 2000

View article titled, High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n - GaN/sapphire (0001): Doping dependence

NARROW

Topics

Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure

Band offset determination of Zn 0.53 Cd 0.47 Se/Zn 0.29 Cd 0.24 Mg 0.47 Se

Contactless electroreflectance, in the range of 20 K

Optical constants of cubic GaN/GaAs(001): Experiment and modeling

Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films

Optical constants of In 0.53 Ga 0.47 As/InP : Experiment and modeling

Thermal conductivity of GaN films: Effects of impurities and dislocations

Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure

Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001)

High spatial resolution thermal conductivity of bulk ZnO (0001)

Effect of dislocations on thermal conductivity of GaN layers

Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure

Comment on “Photoreflectance study in the E 1 and E 1 +Δ 1 transition regions of CdTe” [J. Appl. Phys. 87 , 7360 (2000)]

Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice

High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n - GaN/sapphire (0001): Doping dependence

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