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François Triozon
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Journal Articles

Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian

Youssef Hirchaou, Benoît Sklénard, Wolfgang Goes, Philippe Blaise, François Triozon, Jing Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 052108 (2024)
https://doi.org/10.1063/5.0187779
Published: February 2024
View article titled, Exploring charge hopping transport in amorphous HfO<sub>2</sub>: An approach combing <em>ab initio</em> methods and model Hamiltonian
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Includes: Supplementary data
Journal Articles

Electronic and thermal properties of GeTe/Sb2Te3 superlattices by ab initio approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity

Benoît Sklénard, François Triozon, Chiara Sabbione, Lavinia Nistor, Michel Frei, Gabriele Navarro, Jing Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 201911 (2021)
https://doi.org/10.1063/5.0073469
Published: November 2021
View article titled, Electronic and thermal properties of GeTe/Sb<sub>2</sub>Te<sub>3</sub> superlattices by <em>ab initio</em> approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity
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Includes: Supplementary data
Journal Articles

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Bledion Rrustemi, Marie-Anne Jaud, François Triozon, Clémentine Piotrowicz, William Vandendaele, Charles Leroux, Cyrille Le Royer, Jérôme Biscarrat, Gérard Ghibaudo
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 105704 (2021)
https://doi.org/10.1063/5.0058019
Published: September 2021
View article titled, Investigation on interface charges in SiN/Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors
Open the PDF for Investigation on interface charges in SiN/Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors in another window
Journal Articles

Impact of edge roughness on the electron transport properties of MoS2 ribbons

Jejune Park, Mireille Mouis, François Triozon, Alessandro Cresti
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 224302 (2018)
https://doi.org/10.1063/1.5050383
Published: December 2018
View article titled, Impact of edge roughness on the electron transport properties of MoS<sub>2</sub> ribbons
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Journal Articles

Optical vs electronic gap of hafnia by ab initio Bethe-Salpeter equation

Benoît Sklénard, Alberto Dragoni, François Triozon, Valerio Olevano
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 172903 (2018)
https://doi.org/10.1063/1.5044631
Published: October 2018
View article titled, Optical vs electronic gap of hafnia by <em>ab initio</em> Bethe-Salpeter equation
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Includes: Supplementary data
Journal Articles

Carrier scattering in high-κ/metal gate stacks

Zaiping Zeng, François Triozon, Yann-Michel Niquet
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 114503 (2017)
https://doi.org/10.1063/1.4978357
Published: March 2017
View article titled, Carrier scattering in high-<em>κ</em>/metal gate stacks
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Includes: Supplementary data
Journal Articles

Electronic structure and electron mobility in Si1– xGex nanowires

Gabriel Mugny, Jing Li, François Triozon, Yann-Michel Niquet, Denis Rideau, Christophe Delerue
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 052102 (2017)
https://doi.org/10.1063/1.4975066
Published: January 2017
View article titled, Electronic structure and electron mobility in Si<sub>1–</sub> <sub><em>x</em></sub>Ge<sub><em>x</em></sub> nanowires
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Includes: Supplementary data
Journal Articles

Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Léo Bourdet, Jing Li, Johan Pelloux-Prayer, François Triozon, Mikaël Cassé, Sylvain Barraud, Sébastien Martinie, Denis Rideau, Yann-Michel Niquet
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 084503 (2016)
https://doi.org/10.1063/1.4942217
Published: February 2016
View article titled, Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
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Journal Articles

Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

Yann-Michel Niquet, Viet-Hung Nguyen, François Triozon, Ivan Duchemin, Olivier Nier, Denis Rideau
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 054512 (2014)
https://doi.org/10.1063/1.4864376
Published: February 2014
View article titled, Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches
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Journal Articles

Erratum: “Backscattering in carbon nanotubes: Role of quantum interference effects” [Appl. Phys. Lett. 79 , 3690 (2001)]

Stephan Roche, François Triozon, Angel Rubio
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 1104 (2002)
https://doi.org/10.1063/1.1446202
Published: February 2002
View article titled, Erratum: “Backscattering in carbon nanotubes: Role of quantum interference effects” [Appl. Phys. Lett. 79 , 3690 (2001)]
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Journal Articles

Backscattering in carbon nanotubes: Role of quantum interference effects

Stephan Roche, François Triozon, Angel Rubio
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 3690–3692 (2001)
https://doi.org/10.1063/1.1421643
Published: November 2001
View article titled, Backscattering in carbon nanotubes: Role of quantum interference effects
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Journal Articles

Conduction mechanism in multiwall carbon nanotubes

Stephan Roche, François Triozon, Didier Mayou, A. Rubio
Journal: AIP Conference Proceedings
AIP Conf. Proc. 590, 145–148 (2001)
https://doi.org/10.1063/1.1420075
Published: October 2001
View article titled, Conduction mechanism in multiwall carbon nanotubes
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