Page 1 | Search Results | AIP Publishing

1-20 of 27

Sort by

Sort Order Select

Journal Articles

Comparing post-deposition and post-metallization annealing treatments on Al₂O₃/GaN capacitors for different metal gates

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte

AIP Advances 14, 105109 (2024)

https://doi.org/10.1063/5.0228323

Published: October 2024

View article titled, Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

Journal Articles

Tailoring MoS₂ domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoO_x films on sapphire

Salvatore Ethan Panasci, Emanuela Schilirò, Antal Koos, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Béla Pécz, Filippo Giannazzo

Appl. Phys. Lett. 124, 243101 (2024)

https://doi.org/10.1063/5.0214274

Published: June 2024

View article titled, Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Journal Articles

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal Koos, Bela Pecz, Filippo Giannazzo

Appl. Phys. Lett. 124, 102102 (2024)

https://doi.org/10.1063/5.0192691

Published: March 2024

View article titled, Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Journal Articles

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Appl. Phys. Lett. 121, 233506 (2022)

https://doi.org/10.1063/5.0122097

Published: December 2022

View article titled, Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Includes: Supplementary data

Journal Articles

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO₂/4H-SiC MOSFETs

Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte

Appl. Phys. Lett. 117, 103502 (2020)

https://doi.org/10.1063/5.0012399

Published: September 2020

View article titled, Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs

Journal Articles

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Monia Spera, Giuseppe Greco, Andrea Severino, Marilena Vivona, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Appl. Phys. Lett. 117, 013502 (2020)

https://doi.org/10.1063/5.0012029

Published: July 2020

View article titled, Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Journal Articles

Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo Giannazzo, Francesco La Via, Fabrizio Roccaforte, Marcin Zielinski, Massimo Zimbone, Antonino La Magna

Appl. Phys. Rev. 7, 021402 (2020)

https://doi.org/10.1063/1.5132300

Published: April 2020

View article titled, Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Includes: Supplementary data

Journal Articles

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

J. Appl. Phys. 121, 045701 (2017)

https://doi.org/10.1063/1.4974868

Published: January 2017

View article titled, Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal Articles

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO₂ as gate dielectric

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

J. Vac. Sci. Technol. B 35, 01A101 (2017)

https://doi.org/10.1116/1.4967306

Published: November 2016

View article titled, Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal Articles

Publisher's Note: “Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy” [Appl. Phys. Lett. 101, 261906 (2012)]

Alessandra Alberti, Filippo Giannazzo

Appl. Phys. Lett. 102, 039901 (2013)

https://doi.org/10.1063/1.4789899

Published: January 2013

View article titled, Publisher's Note: “Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy” [Appl. Phys. Lett. 101, 261906 (2012)]

Journal Articles

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy

Alessandra Alberti, Filippo Giannazzo

Appl. Phys. Lett. 101, 261906 (2012)

https://doi.org/10.1063/1.4773488

Published: December 2012

View article titled, Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy

Journal Articles

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Appl. Phys. Lett. 101, 172901 (2012)

https://doi.org/10.1063/1.4761961

Published: October 2012

View article titled, Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Journal Articles

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

J. Appl. Phys. 112, 084501 (2012)

https://doi.org/10.1063/1.4759354

Published: October 2012

View article titled, Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Journal Articles

Nanoscale probing of dielectric breakdown at SiO 2 / 3 C-SiC interfaces

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

J. Appl. Phys. 109, 013707 (2011)

https://doi.org/10.1063/1.3525806

Published: January 2011

View article titled, Nanoscale probing of dielectric breakdown at SiO 2 / 3 C-SiC interfaces

Journal Articles

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri

AIP Conf. Proc. 1292, 75–78 (2010)

https://doi.org/10.1063/1.3518315

Published: November 2010

View article titled, Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

Journal Articles

Impact of Morphological Features on the Dielectric Breakdown at SiO 2 /3 C ‐ SiC Interfaces

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

AIP Conf. Proc. 1292, 47–50 (2010)

https://doi.org/10.1063/1.3518308

Published: November 2010

View article titled, Impact of Morphological Features on the Dielectric Breakdown at SiO 2 /3 C ‐ SiC Interfaces

Journal Articles

Toward an ideal Schottky barrier on 3 C -SiC

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Appl. Phys. Lett. 95, 081907 (2009)

https://doi.org/10.1063/1.3211965

Published: August 2009

View article titled, Toward an ideal Schottky barrier on 3 C -SiC

Journal Articles

Improved Ni / 3 C -SiC contacts by effective contact area and conductivity increases at the nanoscale

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Appl. Phys. Lett. 94, 112104 (2009)

https://doi.org/10.1063/1.3099901

Published: March 2009

View article titled, Improved Ni / 3 C -SiC contacts by effective contact area and conductivity increases at the nanoscale

Journal Articles

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Fabrice Severac, Fuccio Cristiano, Elena Bedel-Pereira, Pier Francesco Fazzini, Wilfried Lerch, Silke Paul, Xavier Hebras, Filippo Giannazzo

J. Appl. Phys. 105, 043711 (2009)

https://doi.org/10.1063/1.3079505

Published: February 2009

View article titled, Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Journal Articles

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

J. Appl. Phys. 104, 093706 (2008)

https://doi.org/10.1063/1.3006133

Published: November 2008

View article titled, Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

NARROW

Topics

Comparing post-deposition and post-metallization annealing treatments on Al₂O₃/GaN capacitors for different metal gates

Tailoring MoS₂ domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoO_x films on sapphire

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO₂/4H-SiC MOSFETs

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO₂ as gate dielectric

Publisher's Note: “Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy” [Appl. Phys. Lett. 101, 261906 (2012)]

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Nanoscale probing of dielectric breakdown at SiO 2 / 3 C-SiC interfaces

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

Impact of Morphological Features on the Dielectric Breakdown at SiO 2 /3 C ‐ SiC Interfaces

Toward an ideal Schottky barrier on 3 C -SiC

Improved Ni / 3 C -SiC contacts by effective contact area and conductivity increases at the nanoscale

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only