Page 1 | Search Results | AIP Publishing

1-20 of 171

Sort by

Sort Order Select

Journal Articles

Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience

Md Hafijur Rahman, Chintan Chavda, Nahid Sultan Al-Mamun, Sergei P. Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton

APL Electronic Devices 1, 036103 (2025)

https://doi.org/10.1063/5.0266544

Published: July 2025

View article titled, Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience

Journal Articles

Ultrasmooth single-crystal diamond surfaces by extended ozone exposure

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 043110 (2025)

https://doi.org/10.1116/6.0004590

Published: July 2025

View article titled, Ultrasmooth single-crystal diamond surfaces by extended ozone exposure

Journal Articles

Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton

J. Appl. Phys. 137, 205301 (2025)

https://doi.org/10.1063/5.0267276

Published: May 2025

View article titled, Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond

Journal Articles

Band alignment of Cr₂MnO₄ on ( 2 ¯ 01 ) and (001) β-Ga₂O₃

Hsiao-Hsuan Wan, Chao-Ching Chiang, Fan Ren, Babajide Akintunde, Naomi Derksen, Ashik Imran, Adam J. Hauser, Marko J. Tadjer, James C. Gallagher, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 043402 (2025)

https://doi.org/10.1116/6.0004591

Published: May 2025

View article titled, Band alignment of Cr2MnO4 on ( 2 ¯ 01 ) and (001) β-Ga2O3

Journal Articles

Defining the relative proton irradiation hardness of β-Ga₂O₃

Hsiao-Hsuan Wan, Fan Ren, Alexander Y. Polyakov, Aman Haque, Joonyup Bae, Jihyun Kim, Aaron Rabin, Assel Aitkaliyeva, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 042801 (2025)

https://doi.org/10.1116/6.0004576

Published: May 2025

View article titled, Defining the relative proton irradiation hardness of β-Ga2O3

Journal Articles

High temperature operation and failure of Ga₂O₃ Schottky barrier diodes: An in situ TEM study

Nahid Sultan Al-Mamun, Jian-Sian Li, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton

APL Electronic Devices 1, 016103 (2025)

https://doi.org/10.1063/5.0250729

Published: March 2025

View article titled, High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study

Journal Articles

Perspective on comparative radiation hardness of Ga₂O₃ polymorphs

S. J. Pearton, Fan Ren, Alexander Y. Polyakov, Eugene B. Yakimov, Leonid Chernyak, Aman Haque

J. Vac. Sci. Technol. A 43, 038501 (2025)

https://doi.org/10.1116/6.0004444

Published: March 2025

View article titled, Perspective on comparative radiation hardness of Ga2O3 polymorphs

Journal Articles

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton

Appl. Phys. Lett. 126, 043501 (2025)

https://doi.org/10.1063/5.0245530

Published: January 2025

View article titled, kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Journal Articles

Enhancing radiation hardness of microelectronics through stress-relief milling

Sergei P. Stepanoff, Ani Khachatrian, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe

Appl. Phys. Lett. 126, 034101 (2025)

https://doi.org/10.1063/5.0217525

Published: January 2025

View article titled, Enhancing radiation hardness of microelectronics through stress-relief milling

Journal Articles

Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

A. Y. Polyakov, L. A. Alexanyan, I. V. Schemerov, A. A. Vasilev, A. V. Chernykh, Anton Ivanov, Nadezhda Talnishnikh, Anton Chernyakov, A. L. Zakgeim, N. M. Shmidt, P. B. Lagov, A. S. Doroshkevich, R. Sh. Isayev, Yu. S. Pavlov, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

APL Mater. 12, 121121 (2024)

https://doi.org/10.1063/5.0231390

Published: December 2024

View article titled, Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

Journal Articles

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 018501 (2025)

https://doi.org/10.1116/6.0004146

Published: December 2024

View article titled, Perspective on breakdown in Ga2O3 vertical rectifiers

Journal Articles

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 012701 (2025)

https://doi.org/10.1116/6.0004141

Published: December 2024

View article titled, kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

Journal Articles

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich

AIP Advances 14, 115301 (2024)

https://doi.org/10.1063/5.0238027

Published: November 2024

View article titled, EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Journal Articles

Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Madani Labed, Jang Hyeok Park, You Seung Rim, Fan Ren, Stephen J. Pearton

AIP Advances 14, 105326 (2024)

https://doi.org/10.1063/5.0233627

Published: October 2024

View article titled, Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Journal Articles

Achievement of low turn-on voltage in Ga₂O₃ Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton

AIP Advances 14, 095201 (2024)

https://doi.org/10.1063/5.0227210

Published: September 2024

View article titled, Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Journal Articles

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton

J. Vac. Sci. Technol. B 42, 052206 (2024)

https://doi.org/10.1116/6.0003818

Published: August 2024

View article titled, MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Journal Articles

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Sergei P. Stepanoff, Fan Ren, Aman Haque, Douglas Wolfe, S. J. Pearton

J. Vac. Sci. Technol. B 42, 052203 (2024)

https://doi.org/10.1116/6.0003819

Published: August 2024

View article titled, Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Journal Articles

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Leonid Chernyak, Alfons Schulte, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Vincent Sallet, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Arie Ruzin

AIP Advances 14, 085103 (2024)

https://doi.org/10.1063/5.0220201

Published: August 2024

View article titled, Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Journal Articles

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 053204 (2024)

https://doi.org/10.1116/6.0003839

Published: August 2024

View article titled, Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Journal Articles

Dry and wet etching of single-crystal AlN

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 052601 (2024)

https://doi.org/10.1116/6.0003744

Published: July 2024

View article titled, Dry and wet etching of single-crystal AlN

Update search

NARROW

Format

Collections

Topics

Subjects

Journal

Article Type

Issue Section

Date

Availability

Repeated rejuvenation of SiC MOSFETs for unprecedented ionizing radiation resilience

Ultrasmooth single-crystal diamond surfaces by extended ozone exposure

Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond

Band alignment of Cr₂MnO₄ on ( 2 ¯ 01 ) and (001) β-Ga₂O₃

Defining the relative proton irradiation hardness of β-Ga₂O₃

High temperature operation and failure of Ga₂O₃ Schottky barrier diodes: An in situ TEM study

Perspective on comparative radiation hardness of Ga₂O₃ polymorphs

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Enhancing radiation hardness of microelectronics through stress-relief milling

Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

Perspective on breakdown in Ga₂O₃ vertical rectifiers

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers

Achievement of low turn-on voltage in Ga₂O₃ Schottky and heterojunction hybrid rectifiers using W/Au anode contact

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Dry and wet etching of single-crystal AlN

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only