1-20 of 100
F. Scholz
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Note: Soft X-ray transmission polarizer based on ferromagnetic thin films

L. Müller, G. Hartmann, S. Schleitzer, M. H. Berntsen, M. Walther, R. Rysov, W. Roseker, F. Scholz, J. Seltmann, L. Glaser, J. Viefhaus, K. Mertens, K. Bagschik, R. Frömter, A. De Fanis, I. Shevchuk, K. Medjanik, G. Öhrwall, H. P. Oepen, M. Martins, M. Meyer, G. Grübel
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 89, 036103 (2018)
https://doi.org/10.1063/1.5018396
Published: March 2018
View article titled, Note: Soft X-ray transmission polarizer based on ferromagnetic thin films
Open the PDF for Note: Soft X-ray transmission polarizer based on ferromagnetic thin films in another window
Journal Articles

Stacking fault emission in GaN: Influence of n-type doping

M. Hocker, I. Tischer, B. Neuschl, K. Thonke, M. Caliebe, M. Klein, F. Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 185703 (2016)
https://doi.org/10.1063/1.4949512
Published: May 2016
View article titled, Stacking fault emission in GaN: Influence of n-type doping
Open the PDF for Stacking fault emission in GaN: Influence of n-type doping in another window
Journal Articles

Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy

T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, A. Rosenauer
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 175701 (2016)
https://doi.org/10.1063/1.4948385
Published: May 2016
View article titled, Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
Open the PDF for Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy in another window
Journal Articles

Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

B. Neuschl, M. L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz, M. Feneberg
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 215705 (2015)
https://doi.org/10.1063/1.4936124
Published: December 2015
View article titled, Zeeman spectroscopy of the internal transition <sup>4</sup>T<sub>1</sub> to <sup>6</sup>A<sub>1</sub> of Fe<sup>3+</sup> ions in wurtzite GaN
Open the PDF for Zeeman spectroscopy of the internal transition <sup>4</sup>T<sub>1</sub> to <sup>6</sup>A<sub>1</sub> of Fe<sup>3+</sup> ions in wurtzite GaN in another window
Journal Articles

Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures

B. Neuschl, J. Helbing, K. Thonke, T. Meisch, J. Wang, F. Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 183507 (2014)
https://doi.org/10.1063/1.4901907
Published: November 2014
View article titled, Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
Open the PDF for Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures in another window
Journal Articles

Intentional anisotropic strain relaxation in ( 11 2 ¯ 2 ) oriented Al1−xInxN one-dimensionally lattice matched to GaN

E. R. Buß, U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz, A. Hangleiter
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 122109 (2014)
https://doi.org/10.1063/1.4895938
Published: September 2014
View article titled, Intentional anisotropic strain relaxation in ( 11 2 ¯ 2 ) oriented Al<sub>1−x</sub>In<sub>x</sub>N one-dimensionally lattice matched to GaN
Open the PDF for Intentional anisotropic strain relaxation in ( 11 2 ¯ 2 ) oriented Al<sub>1−x</sub>In<sub>x</sub>N one-dimensionally lattice matched to GaN in another window
Journal Articles

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, M. Feneberg
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 113506 (2014)
https://doi.org/10.1063/1.4895995
Published: September 2014
View article titled, Composition dependent valence band order in c-oriented wurtzite AlGaN layers
Open the PDF for Composition dependent valence band order in c-oriented wurtzite AlGaN layers in another window
Journal Articles

The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth

M. Klein, T. Meisch, F. Lipski, F. Scholz
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 092109 (2014)
https://doi.org/10.1063/1.4895068
Published: September 2014
View article titled, The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth
Open the PDF for The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth in another window
Journal Articles

LEDs on HVPE grown GaN substrates: Influence of macroscopic surface features

SK. S. Rahman, R. A. R. Leute, J. Wang, T. Meisch, M. Klein, F. Scholz, K. Koyama, M. Ishii, H. Takeda
Journal: AIP Advances
AIP Advances 4, 077119 (2014)
https://doi.org/10.1063/1.4890348
Published: July 2014
View article titled, LEDs on HVPE grown GaN substrates: Influence of macroscopic surface features
Open the PDF for LEDs on HVPE grown GaN substrates: Influence of macroscopic surface features in another window
Journal Articles

Analysis of diamond surface channel field-effect transistors with AlN passivation layers

C. Pietzka, J. Scharpf, M. Fikry, D. Heinz, K. Forghani, T. Meisch, Th. Diemant, R. J. Behm, J. Bernhard, J. Biskupek, U. Kaiser, F. Scholz, E. Kohn
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 114503 (2013)
https://doi.org/10.1063/1.4819453
Published: September 2013
View article titled, Analysis of diamond surface channel field-effect transistors with AlN passivation layers
Open the PDF for Analysis of diamond surface channel field-effect transistors with AlN passivation layers in another window
Journal Articles

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A. D. Dräger, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, A. Hangleiter
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 011901 (2011)
https://doi.org/10.1063/1.3607301
Published: July 2011
View article titled, Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
Open the PDF for Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells in another window
Journal Articles

Advances in Large Grain Resonators for the European XFEL

W. Singer, S. Aderhold, J. Iversen, G. Kreps, A. Matheisen, X. Singer, K. Twarowski, H. Weise, M. Pekeler, F. Scholz, B. Spaniol, E. Stiedl
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1352, 13–24 (2011)
https://doi.org/10.1063/1.3579220
Published: March 2011
View article titled, Advances in Large Grain Resonators for the European XFEL
Open the PDF for Advances in Large Grain Resonators for the European XFEL in another window
Journal Articles

Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers

B. Neuschl, K. J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, F. Scholz
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 192108 (2010)
https://doi.org/10.1063/1.3515865
Published: November 2010
View article titled, Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers
Open the PDF for Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers in another window
Journal Articles

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, U. Kaiser
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 101904 (2010)
https://doi.org/10.1063/1.3487935
Published: September 2010
View article titled, Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
Open the PDF for Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets in another window
Journal Articles

X-ray diffuse scattering from threading dislocations in epitaxial GaN layers

M. Barchuk, V. Holý, B. Miljević, B. Krause, T. Baumbach, J. Hertkorn, F. Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 043521 (2010)
https://doi.org/10.1063/1.3460803
Published: August 2010
View article titled, X-ray diffuse scattering from threading dislocations in epitaxial GaN layers
Open the PDF for X-ray diffuse scattering from threading dislocations in epitaxial GaN layers in another window
Journal Articles

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 031903 (2009)
https://doi.org/10.1063/1.3186044
Published: July 2009
View article titled, Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
Open the PDF for Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering in another window
Journal Articles

Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, Z. H. Wu, Q. Y. Wei, F. A. Ponce, M. A. Moram, C. J. Humphreys, C. Vierheilig, U. T. Schwarz
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 013720 (2009)
https://doi.org/10.1063/1.3160312
Published: July 2009
View article titled, Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy
Open the PDF for Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy in another window
Journal Articles

Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

J. Bläsing, A. Krost, J. Hertkorn, F. Scholz, L. Kirste, A. Chuvilin, U. Kaiser
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 033504 (2009)
https://doi.org/10.1063/1.3074095
Published: February 2009
View article titled, Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
Open the PDF for Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study in another window
Journal Articles

Intrafacet migration effects in In Ga N ∕ Ga N structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

P. L. Bonanno, S. M. O’Malley, A. A. Sirenko, A. Kazimirov, Z.-H. Cai, T. Wunderer, P. Brückner, F. Scholz
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 123106 (2008)
https://doi.org/10.1063/1.2901142
Published: March 2008
View article titled, Intrafacet migration effects in In Ga N ∕ Ga N structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction
Open the PDF for Intrafacet migration effects in In Ga N ∕ Ga N structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction in another window
Journal Articles

Polarized light emission from semipolar GaInN quantum wells on { 1 1 ¯ 01 } GaN facets

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, F. Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 053530 (2007)
https://doi.org/10.1063/1.2710306
Published: March 2007
View article titled, Polarized light emission from semipolar GaInN quantum wells on { 1 1 ¯ 01 } GaN facets
Open the PDF for Polarized light emission from semipolar GaInN quantum wells on { 1 1 ¯ 01 } GaN facets in another window