1-20 of 43
F. Roccaforte
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

G. Greco, S. Di Franco, R. Lo Nigro, C. Bongiorno, M. Spera, P. Badalà, F. Iucolano, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 012103 (2024)
https://doi.org/10.1063/5.0180862
Published: January 2024
View article titled, Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer
Open the PDF for Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer in another window
Journal Articles

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

M. Vivona, P. Fiorenza, V. Scuderi, F. La Via, F. Giannazzo, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 072101 (2023)
https://doi.org/10.1063/5.0166042
Published: August 2023
View article titled, Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Open the PDF for Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults in another window
Includes: Supplementary data
Journal Articles

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

P. Fiorenza, L. Maiolo, G. Fortunato, M. Zielinski, F. La Via, F. Giannazzo, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 245701 (2022)
https://doi.org/10.1063/5.0109278
Published: December 2022
View article titled, Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
Open the PDF for Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing in another window
Journal Articles

Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

I. Deretzis, P. Fiorenza, T. Fazio, E. Schilirò, R. Lo Nigro, G. Greco, G. Fisicaro, F. Roccaforte, A. La Magna
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165105 (2022)
https://doi.org/10.1063/5.0112976
Published: October 2022
View article titled, Aluminum Frenkel defects cause hysteresis in Al<sub>2</sub>O<sub>3</sub>/AlGaN capacitors
Open the PDF for Aluminum Frenkel defects cause hysteresis in Al<sub>2</sub>O<sub>3</sub>/AlGaN capacitors in another window
Journal Articles

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

S. E. Panasci, E. Schilirò, F. Migliore, M. Cannas, F. M. Gelardi, F. Roccaforte, F. Giannazzo, S. Agnello
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 093103 (2021)
https://doi.org/10.1063/5.0062106
Published: August 2021
View article titled, Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS<sub>2</sub> produced by gold-assisted exfoliation
Open the PDF for Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS<sub>2</sub> produced by gold-assisted exfoliation in another window
Journal Articles

Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

G. Greco, P. Fiorenza, M. Spera, F. Giannazzo, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 234501 (2021)
https://doi.org/10.1063/5.0052079
Published: June 2021
View article titled, Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures
Open the PDF for Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures in another window
Journal Articles

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

F. Giannazzo, G. Greco, E. Schilirò, S. Di Franco, I. Deretzis, G. Nicotra, A. La Magna, F. Roccaforte
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1990, 020008 (2018)
https://doi.org/10.1063/1.5047762
Published: July 2018
View article titled, Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications
Open the PDF for Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications in another window
Journal Articles

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski, M. Vivona, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Beljakowa, H. B. Weber, F. Giannazzo, H. Peyre, V. Souliere, T. Chassagne, M. Zielinski, S. Juillaguet, G. Ferro, F. Roccaforte, M. Krieger
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 205701 (2016)
https://doi.org/10.1063/1.4967301
Published: November 2016
View article titled, Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
Open the PDF for Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition in another window
Journal Articles

Challenges in graphene integration for high-frequency electronics

F. Giannazzo, G. Fisichella, G. Greco, F. Roccaforte
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1749, 020004 (2016)
https://doi.org/10.1063/1.4954487
Published: June 2016
View article titled, Challenges in graphene integration for high-frequency electronics
Open the PDF for Challenges in graphene integration for high-frequency electronics in another window
Journal Articles

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

M. Vivona, G. Greco, R. Lo Nigro, C. Bongiorno, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 035705 (2015)
https://doi.org/10.1063/1.4927271
Published: July 2015
View article titled, Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Open the PDF for Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC in another window
Journal Articles

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

G. Fisichella, G. Greco, F. Roccaforte, F. Giannazzo
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 063117 (2014)
https://doi.org/10.1063/1.4893327
Published: August 2014
View article titled, From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure
Open the PDF for From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure in another window
Journal Articles

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

G. Fisichella, S. Di Franco, F. Roccaforte, S. Ravesi, F. Giannazzo
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 233105 (2014)
https://doi.org/10.1063/1.4882165
Published: June 2014
View article titled, Microscopic mechanisms of graphene electrolytic delamination from metal substrates
Open the PDF for Microscopic mechanisms of graphene electrolytic delamination from metal substrates in another window
Journal Articles

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

P. Fiorenza, F. Giannazzo, M. Vivona, A. La Magna, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 153508 (2013)
https://doi.org/10.1063/1.4824980
Published: October 2013
View article titled, SiO<sub>2</sub>/4H-SiC interface doping during post-deposition-annealing of the oxide in N<sub>2</sub>O or POCl<sub>3</sub>
Open the PDF for SiO<sub>2</sub>/4H-SiC interface doping during post-deposition-annealing of the oxide in N<sub>2</sub>O or POCl<sub>3</sub> in another window
Journal Articles

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

P. Fiorenza, G. Greco, G. Fisichella, F. Roccaforte, G. Malandrino, R. Lo Nigro
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 112905 (2013)
https://doi.org/10.1063/1.4820795
Published: September 2013
View article titled, High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
Open the PDF for High permittivity cerium oxide thin films on AlGaN/GaN heterostructures in another window
Journal Articles

Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

G. Greco, F. Giannazzo, F. Iucolano, R. Lo Nigro, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 083717 (2013)
https://doi.org/10.1063/1.4819400
Published: August 2013
View article titled, Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures
Open the PDF for Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures in another window
Journal Articles

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

L. K. Swanson, P. Fiorenza, F. Giannazzo, A. Frazzetto, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 193501 (2012)
https://doi.org/10.1063/1.4766175
Published: November 2012
View article titled, Correlating macroscopic and nanoscale electrical modifications of SiO<sub>2</sub>/4H-SiC interfaces upon post-oxidation-annealing in N<sub>2</sub>O and POCl<sub>3</sub>
Open the PDF for Correlating macroscopic and nanoscale electrical modifications of SiO<sub>2</sub>/4H-SiC interfaces upon post-oxidation-annealing in N<sub>2</sub>O and POCl<sub>3</sub> in another window
Journal Articles

Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]

A. Frazzetto, F. Giannazzo, P. Fiorenza, V. Raineri, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 259901 (2011)
https://doi.org/10.1063/1.3665121
Published: December 2011
View article titled, Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]
Open the PDF for Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)] in another window
Journal Articles

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

G. Greco, P. Prystawko, M. Leszczyński, R. Lo Nigro, V. Raineri, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 123703 (2011)
https://doi.org/10.1063/1.3669407
Published: December 2011
View article titled, Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
Open the PDF for Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN in another window
Journal Articles

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

A. Frazzetto, F. Giannazzo, P. Fiorenza, V. Raineri, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 072117 (2011)
https://doi.org/10.1063/1.3627186
Published: August 2011
View article titled, Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
Open the PDF for Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors in another window
Journal Articles

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

F. Roccaforte, F. Giannazzo, F. Iucolano, C. Bongiorno, V Raineri
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 023703 (2009)
https://doi.org/10.1063/1.3174438
Published: July 2009
View article titled, Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
Open the PDF for Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation in another window