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Journal Articles

Performance limiting inhomogeneities of defect states in ampere-class Ga₂O₃ power diodes

Z. P. Wang, N. Sun, X. X. Yu, H. H. Gong, X. L. Ji, F.-F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, A. Yu. Kuznetsov, J. D. Ye

Appl. Phys. Rev. 11, 021413 (2024)

https://doi.org/10.1063/5.0191343

Published: April 2024

View article titled, Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

Includes: Supplementary data

Journal Articles

Investigation of the surface band structure and the evolution of defects in β-(Al_xGa_1−x)₂O₃

J. Li, X. H. Chen, J. G. Hao, F. F. Ren, S. L. Gu, J. D. Ye

Appl. Phys. Lett. 124, 112106 (2024)

https://doi.org/10.1063/5.0190863

Published: March 2024

View article titled, Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3

Includes: Supplementary data

Journal Articles

A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode

T. C. Hu, Z. P. Wang, N. Sun, H. H. Gong, X. X. Yu, F. F. Ren, Y. Yang, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 123, 013507 (2023)

https://doi.org/10.1063/5.0147251

Published: July 2023

View article titled, A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Includes: Supplementary data

Journal Articles

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga₂O₃ p⁺–n heterojunction diodes

Z. P. Wang, H. H. Gong, X. X. Yu, T. C. Hu, X. L. Ji, F.-F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 122, 152102 (2023)

https://doi.org/10.1063/5.0138426

Published: April 2023

View article titled, Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

Includes: Supplementary data

Journal Articles

Tunable anomalous valley Hall effect and magnetic phase transition in MHfN₂Cl₂ (M = V, Cr) bimetallic nitrogen halide monolayers

R. J. Sun, R. Liu, J. J. Lu, X. W. Zhao, G. C. Hu, J. F. Ren, X. B. Yuan

Appl. Phys. Lett. 122, 022404 (2023)

https://doi.org/10.1063/5.0130728

Published: January 2023

View article titled, Tunable anomalous valley Hall effect and magnetic phase transition in MHfN2Cl2 (M = V, Cr) bimetallic nitrogen halide monolayers

Includes: Supplementary data

Journal Articles

Dislocation dynamics in α-Ga₂O₃ micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Y. J. Zhang, Z. P. Wang, Y. Kuang, H. H. Gong, J. G. Hao, X. Y. Sun, F.-F. Ren, Y. Yang, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 120, 121601 (2022)

https://doi.org/10.1063/5.0085367

Published: March 2022

View article titled, Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Includes: Supplementary data

Journal Articles

Robust valley polarization induced by super-exchange effects in HfNX (X = Cl, Br, I)/FeCl₂ two-dimensional ferrovalley heterostructures

R. J. Sun, J. J. Lu, X. W. Zhao, G. C. Hu, X. B. Yuan, J. F. Ren

Appl. Phys. Lett. 120, 063103 (2022)

https://doi.org/10.1063/5.0080466

Published: February 2022

View article titled, Robust valley polarization induced by super-exchange effects in HfNX (X = Cl, Br, I)/FeCl2 two-dimensional ferrovalley heterostructures

Includes: Supplementary data

Journal Articles

Over 1.8 GW/cm² beveled-mesa NiO/β-Ga₂O₃ heterojunction diode with 800 V/10 A nanosecond switching capability

F. Zhou, H. H. Gong, Z. P. Wang, W. Z. Xu, X. X. Yu, Y. Yang, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. Lu, J. D. Ye

Appl. Phys. Lett. 119, 262103 (2021)

https://doi.org/10.1063/5.0071280

Published: December 2021

View article titled, Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Journal Articles

Extremely low thermal conductivity of β−Ga₂O₃ with porous structure

H. J. Wu, S. T. Ning, N. Qi, F. Ren, Z. Q. Chen, X. L. Su, X. F. Tang

J. Appl. Phys. 130, 195103 (2021)

https://doi.org/10.1063/5.0069338

Published: November 2021

View article titled, Extremely low thermal conductivity of β−Ga2O3 with porous structure

Journal Articles

Strain-driven phase manipulation of α- and κ-Ga₂O₃ by nanoepitaxial lateral overgrowth on embedded α-In₂O₃ submicron dots

Y. Kuang, T. C. Ma, X. H. Chen, J. G. Hao, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye

Appl. Phys. Lett. 119, 182102 (2021)

https://doi.org/10.1063/5.0068813

Published: November 2021

View article titled, Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots

Includes: Supplementary data

Journal Articles

A self-powered solar-blind photodetector based on polyaniline/α-Ga₂O₃ p–n heterojunction

X. Y. Sun, X. H. Chen, J. G. Hao, Z. P. Wang, Y. Xu, H. H. Gong, Y. J. Zhang, X. X. Yu, C. D. Zhang, F.-F. Ren, S. L. Gu, R. Zhang, J. D. Ye

Appl. Phys. Lett. 119, 141601 (2021)

https://doi.org/10.1063/5.0059061

Published: October 2021

View article titled, A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

Journal Articles

In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir₂O₃/ α -Ga₂O₃ p-n heterojunction

J. G. Hao, H. H. Gong, X. H. Chen, Y. Xu, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye

Appl. Phys. Lett. 118, 261601 (2021)

https://doi.org/10.1063/5.0047710

Published: June 2021

View article titled, In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir2O3/ α -Ga2O3 p-n heterojunction

Includes: Supplementary data

Journal Articles

Experimental estimation of electron–hole pair creation energy in β -Ga₂O₃

E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, F. Ren, S. J. Pearton

Appl. Phys. Lett. 118, 202106 (2021)

https://doi.org/10.1063/5.0053301

Published: May 2021

View article titled, Experimental estimation of electron–hole pair creation energy in β -Ga2O3

Journal Articles

β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

H. H. Gong, X. X. Yu, Y. Xu, X. H. Chen, Y. Kuang, Y. J. Lv, Y. Yang, F.-F. Ren, Z. H. Feng, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 118, 202102 (2021)

https://doi.org/10.1063/5.0050919

Published: May 2021

View article titled, β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Includes: Supplementary data

Journal Articles

Photosensitivity of Ga₂O₃ Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton

APL Mater. 8, 111105 (2020)

https://doi.org/10.1063/5.0030105

Published: November 2020

View article titled, Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

Includes: Supplementary data

Journal Articles

Misfit epitaxial strain manipulated transport properties in cubic In₂O₃ hetero-epilayers

Y. Kuang, T. C. Ma, X. H. Chen, J. Li, F.-F. Ren, B. Liu, X. Y. Cui, S. P. Ringer, S. M. Zhu, S. L. Gu, R. Zhang, Y. D. Zheng, J. D. Ye

Appl. Phys. Lett. 117, 102104 (2020)

https://doi.org/10.1063/5.0021344

Published: September 2020

View article titled, Misfit epitaxial strain manipulated transport properties in cubic In2O3 hetero-epilayers

Includes: Supplementary data

Journal Articles

A 1.86-kV double-layered NiO/ β -Ga₂O₃ vertical p–n heterojunction diode

H. H. Gong, X. H. Chen, Y. Xu, F.-F. Ren, S. L. Gu, J. D. Ye

Appl. Phys. Lett. 117, 022104 (2020)

https://doi.org/10.1063/5.0010052

Published: July 2020

View article titled, A 1.86-kV double-layered NiO/ β -Ga2O3 vertical p–n heterojunction diode

Journal Articles

Selective trapping of positrons by Ag nanolayers in a V/Ag multilayer system

N. Qi, H. X. Zhang, Z. Q. Chen, F. Ren, B. Zhao, M. Jiang, A. Uedono

AIP Advances 10, 035012 (2020)

https://doi.org/10.1063/1.5143379

Published: March 2020

View article titled, Selective trapping of positrons by Ag nanolayers in a V/Ag multilayer system

Journal Articles

Band alignment and band bending at α-Ga₂O₃/ZnO n-n isotype hetero-interface

X. H. Chen, Y. T. Chen, F.-F. Ren, S. L. Gu, H. H. Tan, C. Jagadish, J. D. Ye

Appl. Phys. Lett. 115, 202101 (2019)

https://doi.org/10.1063/1.5126325

Published: November 2019

View article titled, Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface

Includes: Supplementary data

Journal Articles

On the origin of dislocation generation and annihilation in α -Ga₂O₃ epilayers on sapphire

T. C. Ma, X. H. Chen, Y. Kuang, L. Li, J. Li, F. Kremer, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. H. Tan, C. Jagadish, J. D. Ye

Appl. Phys. Lett. 115, 182101 (2019)

https://doi.org/10.1063/1.5120554

Published: October 2019

View article titled, On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire

NARROW

Topics

Performance limiting inhomogeneities of defect states in ampere-class Ga₂O₃ power diodes

Investigation of the surface band structure and the evolution of defects in β-(Al_xGa_1−x)₂O₃

A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga₂O₃ p⁺–n heterojunction diodes

Tunable anomalous valley Hall effect and magnetic phase transition in MHfN₂Cl₂ (M = V, Cr) bimetallic nitrogen halide monolayers

Dislocation dynamics in α-Ga₂O₃ micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Robust valley polarization induced by super-exchange effects in HfNX (X = Cl, Br, I)/FeCl₂ two-dimensional ferrovalley heterostructures

Over 1.8 GW/cm² beveled-mesa NiO/β-Ga₂O₃ heterojunction diode with 800 V/10 A nanosecond switching capability

Extremely low thermal conductivity of β−Ga₂O₃ with porous structure

Strain-driven phase manipulation of α- and κ-Ga₂O₃ by nanoepitaxial lateral overgrowth on embedded α-In₂O₃ submicron dots

A self-powered solar-blind photodetector based on polyaniline/α-Ga₂O₃ p–n heterojunction

In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir₂O₃/ α -Ga₂O₃ p-n heterojunction

Experimental estimation of electron–hole pair creation energy in β -Ga₂O₃

β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Photosensitivity of Ga₂O₃ Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

Misfit epitaxial strain manipulated transport properties in cubic In₂O₃ hetero-epilayers

A 1.86-kV double-layered NiO/ β -Ga₂O₃ vertical p–n heterojunction diode

Selective trapping of positrons by Ag nanolayers in a V/Ag multilayer system

Band alignment and band bending at α-Ga₂O₃/ZnO n-n isotype hetero-interface

On the origin of dislocation generation and annihilation in α -Ga₂O₃ epilayers on sapphire

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