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F. D. Auret
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Journal Articles

Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

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H. T. Danga, F. D. Auret, S. M. Tunhuma, E. Omotoso, E. Igumbor, W. E. Meyer
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2109, 080003 (2019)
https://doi.org/10.1063/1.5110130
Published: June 2019
View articletitled, Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon
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Journal Articles

Defects induced by solid state reactions at the tungsten-silicon carbide interface

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S. M. Tunhuma, M. Diale, M. J. Legodi, J. M. Nel, T. T. Thabete, F. D. Auret
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161565 (2018)
https://doi.org/10.1063/1.5011242
Published: January 2018
View articletitled, Defects induced by solid state reactions at the tungsten-silicon carbide interface
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Journal Articles

The fine structure of electron irradiation induced EL2-like defects in n-GaAs

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S. M. Tunhuma, F. D. Auret, M. J. Legodi, M. Diale
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 145705 (2016)
https://doi.org/10.1063/1.4945774
Published: April 2016
View articletitled, The fine structure of electron irradiation induced EL2-like defects in n-GaAs
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Journal Articles

Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

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S. M. M. Coelho, F. D. Auret, P. J. Janse van Rensburg, J. M. Nel
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 173708 (2013)
https://doi.org/10.1063/1.4828999
Published: November 2013
View articletitled, Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure
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Journal Articles

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

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W. Mtangi, M. Schmidt, F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Diale, J. M. Nel, A. G. M. Das, F. C. C. Ling, A. Chawanda
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 124502 (2013)
https://doi.org/10.1063/1.4796139
Published: March 2013
View articletitled, A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
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Journal Articles

Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

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W. Mtangi, F. D. Auret, W. E. Meyer, M. J. Legodi, P. J. Janse van Rensburg, S. M. M. Coelho, M. Diale, J. M. Nel
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 094504 (2012)
https://doi.org/10.1063/1.4709728
Published: May 2012
View articletitled, Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS
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Journal Articles

Field dependence of the E1′ and M3′ electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide

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A. Venter, C. Nyamhere, J. R. Botha, F. D. Auret, S. M. M. Coelho, W. E. Meyer
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 093703 (2012)
https://doi.org/10.1063/1.4709390
Published: May 2012
View articletitled, Field dependence of the E1′ and M3′ electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide
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Journal Articles

Effects of high temperature annealing on single crystal ZnO and ZnO devices

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W. Mtangi, F. D. Auret, M. Diale, W. E. Meyer, A. Chawanda, H. de Meyer, P. J. Janse van Rensburg, J. M. Nel
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 084503 (2012)
https://doi.org/10.1063/1.3700186
Published: April 2012
View articletitled, Effects of high temperature annealing on single crystal ZnO and ZnO devices
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Journal Articles

Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure

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C. Nyamhere, A. Venter, F. D. Auret, S. M. M. Coelho, D. M. Murape
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 044511 (2012)
https://doi.org/10.1063/1.3687426
Published: February 2012
View articletitled, Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure
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Journal Articles

Ar plasma induced deep levels in epitaxial n-GaAs

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A. Venter, C. Nyamhere, J. R. Botha, F. D. Auret, P. J. Janse van Rensburg, W. E. Meyer, S. M. M. Coelho, V. l. Kolkovsky
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 013703 (2012)
https://doi.org/10.1063/1.3673322
Published: January 2012
View articletitled, Ar plasma induced deep levels in epitaxial n-GaAs
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Journal Articles

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

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W. Mtangi, F. D. Auret, P. J. Janse van Rensburg, S. M. M. Coelho, M. J. Legodi, J. M. Nel, W. E. Meyer, A. Chawanda
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 094504 (2011)
https://doi.org/10.1063/1.3658027
Published: November 2011
View articletitled, A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques
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Journal Articles

Defect production in strained p -type Si 1 − x Ge x by Er implantation

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M. Mamor, B. Pipeleers, F. D. Auret, A. Vantomme
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013715 (2011)
https://doi.org/10.1063/1.3531539
Published: January 2011
View articletitled, Defect production in strained p -type Si 1 − x Ge x by Er implantation
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Journal Articles

A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction

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G. H. Kassier, K. Haupt, N. Erasmus, E. G. Rohwer, H. M. von Bergmann, H. Schwoerer, S. M. M. Coelho, F. D. Auret
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 81, 105103 (2010)
https://doi.org/10.1063/1.3489118
Published: October 2010
View articletitled, A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction
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Journal Articles

Lithium and electrical properties of ZnO

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L. Vines, E. V. Monakhov, R. Schifano, W. Mtangi, F. D. Auret, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103707 (2010)
https://doi.org/10.1063/1.3415551
Published: May 2010
View articletitled, Lithium and electrical properties of ZnO
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Journal Articles

Defects in virgin hydrothermally grown n -type ZnO studied by temperature dependent Hall effect measurements

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R. Schifano, E. V. Monakhov, L. Vines, B. G. Svensson, W. Mtangi, F. D. Auret
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 043706 (2009)
https://doi.org/10.1063/1.3168488
Published: August 2009
View articletitled, Defects in virgin hydrothermally grown n -type ZnO studied by temperature dependent Hall effect measurements
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Journal Articles

Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

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G. H. Kassier, M. Hayes, F. D. Auret, M. Mamor, K. Bouziane
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 014903 (2007)
https://doi.org/10.1063/1.2751413
Published: July 2007
View articletitled, Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO
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Journal Articles

Electrical characterization of defects introduced in n -type Ge during indium implantation

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F. D. Auret, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, W. E. Meyer, S. Decoster, V. Matias, A. Vantomme
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 152123 (2006)
https://doi.org/10.1063/1.2360922
Published: October 2006
View articletitled, Electrical characterization of defects introduced in n -type Ge during indium implantation
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Journal Articles

Investigation of reactive ion etching of dielectrics and Si in C H F 3 ∕ O 2 or C H F 3 ∕ Ar for photovoltaic applications

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C. Gatzert, A. W. Blakers, Prakash N. K. Deenapanray, D. Macdonald, F. D. Auret
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 1857–1865 (2006)
https://doi.org/10.1116/1.2333571
Published: August 2006
View articletitled, Investigation of reactive ion etching of dielectrics and Si in C H F 3 ∕ O 2 or C H F 3 ∕ Ar for photovoltaic applications
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Journal Articles

Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n -type Ge

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F. D. Auret, W. E. Meyer, S. Coelho, M. Hayes
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 242110 (2006)
https://doi.org/10.1063/1.2213203
Published: June 2006
View articletitled, Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n -type Ge
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Journal Articles

Electrical characterization of p ‐ Ga As epilayers disordered by doped spin-on-glass

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P. N. K. Deenapanray, M. Petravic, C. Jagadish, M. Krispin, F. D. Auret
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 033524 (2005)
https://doi.org/10.1063/1.1846140
Published: January 2005
View articletitled, Electrical characterization of p ‐ Ga As epilayers disordered by doped spin-on-glass
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