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Journal Articles

X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2−xO3 (x = 0–2) films on Si (111)

G. Niu, M. H. Zoellner, P. Zaumseil, A. Pouliopoulos, F. d'Acapito, T. Schroeder, F. Boscherini
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 043504 (2013)
https://doi.org/10.1063/1.4788982
Published: January 2013
View article titled, X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite Pr<sub>x</sub>Y<sub>2−x</sub>O<sub>3</sub> (x = 0–2) films on Si (111)
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Journal Articles

Influence of the surface structure on the magnetic properties of Zn 1 − x Co x O

G. Ciatto, A. Di Trolio, E. Fonda, L. Amidani, F. Boscherini, M. Thomasset, P. Alippi, A. Amore Bonapasta
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 252101 (2012)
https://doi.org/10.1063/1.4772473
Published: December 2012
View article titled, Influence of the surface structure on the magnetic properties of Zn 1 − x Co x O
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Journal Articles

Depth-dependent magnetization reversal and spin structure of Fe/NiO exchange-coupled epitaxial bilayers

P. Luches, L. Pasquini, S. Benedetti, S. Valeri, R. Rüffer, F. Boscherini
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 082412 (2012)
https://doi.org/10.1063/1.4747722
Published: August 2012
View article titled, Depth-dependent magnetization reversal and spin structure of Fe/NiO exchange-coupled epitaxial bilayers
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Journal Articles

Appearance potential spectroscopy with a photon counting detector and multiple scattering spectral interpretation

L. Amidani, L. Pasquini, F. Boscherini
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 83, 083901 (2012)
https://doi.org/10.1063/1.4737879
Published: August 2012
View article titled, Appearance potential spectroscopy with a photon counting detector and multiple scattering spectral interpretation
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Journal Articles

Atomic scale mechanism for the Ge-induced stabilization of the tetragonal, very high-κ, phase of ZrO2

F. Boscherini, F. D’Acapito, S. F. Galata, D. Tsoutsou, A. Dimoulas
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 121909 (2011)
https://doi.org/10.1063/1.3641902
Published: September 2011
View article titled, Atomic scale mechanism for the Ge-induced stabilization of the tetragonal, very high-κ, phase of ZrO<sub>2</sub>
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Journal Articles

Ge clustering effects in Ge doped CdTe: Electrical and structural properties

B. Fraboni, F. Boscherini, P. Fochuk, A. Cavallini
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 053706 (2011)
https://doi.org/10.1063/1.3626048
Published: September 2011
View article titled, Ge clustering effects in Ge doped CdTe: Electrical and structural properties
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Journal Articles

Mn-induced growth of InAs nanowires

F. Jabeen, M. Piccin, L. Felisari, V. Grillo, G. Bais, S. Rubini, F. Martelli, F. d’Acapito, M. Rovezzi, F. Boscherini
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 478–483 (2010)
https://doi.org/10.1116/1.3385892
Published: April 2010
View article titled, Mn-induced growth of InAs nanowires
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Journal Articles

Formation and incorporation of SiF 4 molecules in F-implanted preamorphized Si

D. De Salvador, G. Bisognin, E. Napolitani, M. Mastromatteo, N. Baggio, A. Carnera, F. Boscherini, G. Impellizzeri, S. Mirabella, S. Boninelli, F. Priolo, F. Cristiano
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 101908 (2009)
https://doi.org/10.1063/1.3216806
Published: September 2009
View article titled, Formation and incorporation of SiF 4 molecules in F-implanted preamorphized Si
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Journal Articles

B clustering in amorphous Si

D. De Salvador, G. Bisognin, M. Di Marino, E. Napolitani, A. Carnera, S. Mirabella, E. Pecora, E. Bruno, F. Priolo, H. Graoui, M. A. Foad, F. Boscherini
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 382–385 (2008)
https://doi.org/10.1116/1.2781760
Published: January 2008
View article titled, B clustering in amorphous Si
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Journal Articles

Modification of the N bonding environment in GaN after high-dose Si implantation: An x-ray absorption study

M. Katsikini, F. Pinakidou, E. C. Paloura, F. Boscherini
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 083510 (2007)
https://doi.org/10.1063/1.2717158
Published: April 2007
View article titled, Modification of the N bonding environment in GaN after high-dose Si implantation: An x-ray absorption study
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Journal Articles

A study of the growth of Lu 2 O 3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy

M. Malvestuto, M. Pedio, S. Nannarone, G. Pavia, G. Scarel, M. Fanciulli, F. Boscherini
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 074104 (2007)
https://doi.org/10.1063/1.2717128
Published: April 2007
View article titled, A study of the growth of Lu 2 O 3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy
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Journal Articles

Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

D. De Salvador, G. Bisognin, M. Di Marino, E. Napolitani, A. Carnera, H. Graoui, M. A. Foad, F. Boscherini, S. Mirabella
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 241901 (2006)
https://doi.org/10.1063/1.2402905
Published: December 2006
View article titled, Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation
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Journal Articles

Coordination of boron and phosphorous in borophosphosilicate glasses

R. Carboni, G. Pacchioni, M. Fanciulli, A. Giglia, N. Mahne, M. Pedio, S. Nannarone, F. Boscherini
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 4312–4314 (2003)
https://doi.org/10.1063/1.1629147
Published: November 2003
View article titled, Coordination of boron and phosphorous in borophosphosilicate glasses
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Journal Articles

Silicon clustering in Si–GaAs δ-doped layers and superlattices

F. Boscherini, N. Ferretti, B. Bonanni, D. Orani, S. Rubini, M. Piccin, A. Franciosi
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1639–1641 (2002)
https://doi.org/10.1063/1.1502908
Published: August 2002
View article titled, Silicon clustering in Si–GaAs δ-doped layers and superlattices
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Journal Articles

Atomic equilibrium concentrations in (InGa)As quantum dots

M. Galluppi, A. Frova, M. Capizzi, F. Boscherini, P. Frigeri, S. Franchi, A. Passaseo
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 3121–3123 (2001)
https://doi.org/10.1063/1.1372202
Published: May 2001
View article titled, Atomic equilibrium concentrations in (InGa)As quantum dots
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Journal Articles

Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)

F. Boscherini, G. Capellini, L. Di Gaspare, F. Rosei, N. Motta, S. Mobilio
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 682–684 (2000)
https://doi.org/10.1063/1.125860
Published: February 2000
View article titled, Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)
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Journal Articles

Bond length variation in In 0.25 Ga 0.75 As/InP epitaxial layers thicker than the critical thickness

M. Tormen, D. De Salvador, M. Natali, A. Drigo, F. Romanato, G. Rossetto, F. Boscherini, S. Mobilio
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 2533–2539 (1999)
https://doi.org/10.1063/1.371088
Published: September 1999
View article titled, Bond length variation in In 0.25 Ga 0.75 As/InP epitaxial layers thicker than the critical thickness
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Journal Articles

Erratum: “Evidence for relaxed and high-quality growth of GaN on SiC(0001)” [Appl. Phys. Lett. 74 , 3308 (1999)]

F. Boscherini, R. Lantier, A. Rizzi, F. D’Acapito, S. Mobilio
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 304 (1999)
https://doi.org/10.1063/1.124355
Published: July 1999
View article titled, Erratum: “Evidence for relaxed and high-quality growth of GaN on SiC(0001)” [Appl. Phys. Lett. 74 , 3308 (1999)]
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Journal Articles

Addendum: “Pr K -edge x-ray absorption fine structure analysis of the local structure of Pr in fluorozirconate glasses [J. Appl. Phys. 83 , 5065 (1998)]

M. Braglia, G. Dai, S. Mosso, S. Pascarelli, F. Boscherini, A. Balerna, C. Lamberti
Journal: Journal of Applied Physics
J. Appl. Phys. 85, 7987–7988 (1999)
https://doi.org/10.1063/1.370620
Published: June 1999
View article titled, Addendum: “Pr K -edge x-ray absorption fine structure analysis of the local structure of Pr in fluorozirconate glasses [J. Appl. Phys. 83 , 5065 (1998)]
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Journal Articles

Evidence for relaxed and high-quality growth of GaN on SiC(0001)

F. Boscherini, R. Lantier, A. Rizzi, F. D’Acapito, S. Mobilio
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 3308–3310 (1999)
https://doi.org/10.1063/1.123327
Published: May 1999
View article titled, Evidence for relaxed and high-quality growth of GaN on SiC(0001)
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