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Journal Articles

Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P

P.-Y. Su, H. Liu, R. M. S. Kawabata, E. C. Weiner, R. Jakomin, M. P. Pires, R. R. King, P. L. Souza, F. A. Ponce
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 053104 (2019)
https://doi.org/10.1063/1.5063941
Published: February 2019
View article titled, Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga<sub>0.5</sub>In<sub>0.5</sub>P
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Journal Articles

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

P. G. Caldas, E. M. Silva, R. Prioli, J. Y. Huang, R. Juday, A. M. Fischer, F. A. Ponce
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 125105 (2017)
https://doi.org/10.1063/1.4978018
Published: March 2017
View article titled, Plasticity and optical properties of GaN under highly localized nanoindentation stress fields
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Journal Articles

Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

H. Xie, R. Prioli, A. M. Fischer, F. A. Ponce, R. M. S. Kawabata, L. D. Pinto, R. Jakomin, M. P. Pires, P. L. Souza
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 034301 (2016)
https://doi.org/10.1063/1.4958871
Published: July 2016
View article titled, Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation
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Journal Articles

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

R. Jakomin, R. M. S. Kawabata, R. T. Mourão, D. N. Micha, M. P. Pires, H. Xie, A. M. Fischer, F. A. Ponce, P. L. Souza
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 093511 (2014)
https://doi.org/10.1063/1.4894295
Published: September 2014
View article titled, InAs quantum dot growth on Al<sub><em>x</em></sub>Ga<sub>1</sub><sub>−</sub><sub><em>x</em></sub>As by metalorganic vapor phase epitaxy for intermediate band solar cells
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Journal Articles

The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

J. Y. Huang, F. A. Ponce, P. G. Caldas, R. Prioli, C. M. Almeida
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 203503 (2013)
https://doi.org/10.1063/1.4833237
Published: November 2013
View article titled, The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals
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Journal Articles

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

A. M. Fischer, Y. O. Wei, F. A. Ponce, M. Moseley, B. Gunning, W. A. Doolittle
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 131101 (2013)
https://doi.org/10.1063/1.4822122
Published: September 2013
View article titled, Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
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Journal Articles

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

R. Juday, A. M. Fischer, Y. Huang, J. Y. Huang, H. J. Kim, J.-H. Ryou, R. D. Dupuis, D. P. Bour, F. A. Ponce
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 082103 (2013)
https://doi.org/10.1063/1.4819029
Published: August 2013
View article titled, Hydrogen-related, deeply bound excitons in Mg-doped GaN films
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Journal Articles

Strain-related optical properties of ZnO crystals due to nanoindentation on various surface orientations

R. Juday, E. M. Silva, J. Y. Huang, P. G. Caldas, R. Prioli, F. A. Ponce
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 183511 (2013)
https://doi.org/10.1063/1.4804309
Published: May 2013
View article titled, Strain-related optical properties of ZnO crystals due to nanoindentation on various surface orientations
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Journal Articles

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. U. Huang, F. A. Ponce, J. P. Liu, Z. Lochner, J.-H. Ryou, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 041115 (2013)
https://doi.org/10.1063/1.4789758
Published: February 2013
View article titled, The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
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Journal Articles

Early stages of mechanical deformation in indium phosphide with the zinc blende structure

C. M. Almeida, R. Prioli, Q. Y. Wei, F. A. Ponce
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 063514 (2012)
https://doi.org/10.1063/1.4752881
Published: September 2012
View article titled, Early stages of mechanical deformation in indium phosphide with the zinc blende structure
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Journal Articles

Free carrier accumulation at cubic AlGaN/GaN heterojunctions

Q. Y. Wei, T. Li, J. Y. Huang, F. A. Ponce, E. Tschumak, A. Zado, D. J. As
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 142108 (2012)
https://doi.org/10.1063/1.3700968
Published: April 2012
View article titled, Free carrier accumulation at cubic AlGaN/GaN heterojunctions
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Journal Articles

Compositional instability in InAlN/GaN lattice-matched epitaxy

Q. Y. Wei, T. Li, Y. Huang, J. Y. Huang, Z. T. Chen, T. Egawa, F. A. Ponce
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 092101 (2012)
https://doi.org/10.1063/1.3690890
Published: February 2012
View article titled, Compositional instability in InAlN/GaN lattice-matched epitaxy
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Journal Articles

Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy

R. Oshima, J. Y. Huang, N. Miyashita, K. Matsubara, Y. Okada, F. A. Ponce
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 191907 (2011)
https://doi.org/10.1063/1.3660232
Published: November 2011
View article titled, Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy
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Journal Articles

Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells

Y. Huang, K. W. Sun, A. M. Fischer, Q. Y. Wei, R. Juday, F. A. Ponce, R. Kato, T. Yokogawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 261914 (2011)
https://doi.org/10.1063/1.3605253
Published: June 2011
View article titled, Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells
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Journal Articles

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Z. H. Wu, Y. Q. Sun, J. Yin, Y.-Y Fang, J. N. Dai, C. Q. Chen, Q. Y. Wei, T. Li, K. W. Sun, A. M. Fischer, F. A. Ponce
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 021005 (2011)
https://doi.org/10.1116/1.3545801
Published: January 2011
View article titled, Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates
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Journal Articles

Plastic hardening in cubic semiconductors by nanoscratching

P. G. Caldas, R. Prioli, C. M. Almeida, J. Y. Huang, F. A. Ponce
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013502 (2011)
https://doi.org/10.1063/1.3517459
Published: January 2011
View article titled, Plastic hardening in cubic semiconductors by nanoscratching
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Journal Articles

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

H. D. Fonseca-Filho, C. M. Almeida, R. Prioli, M. P. Pires, P. L. Souza, Z. H. Wu, Q. Y. Wei, F. A. Ponce
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 054313 (2010)
https://doi.org/10.1063/1.3309836
Published: March 2010
View article titled, Growth of linearly ordered arrays of InAs nanocrystals on scratched InP
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Journal Articles

Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

Z. H. Wu, K. W. Sun, Q. Y. Wei, A. M. Fischer, F. A. Ponce, Y. Kawai, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 071909 (2010)
https://doi.org/10.1063/1.3315944
Published: February 2010
View article titled, Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO
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Journal Articles

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, C. Wetzel
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 031906 (2010)
https://doi.org/10.1063/1.3293298
Published: January 2010
View article titled, Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
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Journal Articles

Nanoscale dislocation patterning by scratching in an atomic force microscope

F. A. Ponce, Q. Y. Wei, Z. H. Wu, H. D. Fonseca-Filho, C. M. Almeida, R. Prioli, D. Cherns
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 076106 (2009)
https://doi.org/10.1063/1.3245321
Published: October 2009
View article titled, Nanoscale dislocation patterning by scratching in an atomic force microscope
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