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Enrico Napolitani
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Journal Articles

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Fabio Isa, Javier A. Schmidt, Stefano Aghion, Enrico Napolitani, Giovanni Isella, Rafael Ferragut
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165704 (2024)
https://doi.org/10.1063/5.0179101
Published: April 2024
View article titled, Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon
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Journal Articles

Electrical analysis of pulsed laser annealed Poly-Si: Ga/SiOx passivating contacts

Kejun Chen, Enrico Napolitani, Chun-Sheng Jiang, Matteo De Tullio, Francesco Sgarbossa, San Theingi, William Nemeth, Matthew Page, Sumit Agarwal, Paul Stradins, David L. Young
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2826, 020002 (2023)
https://doi.org/10.1063/5.0141158
Published: June 2023
View article titled, Electrical analysis of pulsed laser annealed <em>Poly</em>-Si: Ga/SiO<sub><em>x</em></sub> passivating contacts
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Journal Articles

Non-equilibrium doping of poly-Si:Ga/SiOx passivating contacts solar cells

Kejun Chen, Enrico Napolitani, San Theingi, Harvey Guthrey, William Nemeth, Matthew Page, Paul Stradins, Sumit Agarwal, David L. Young
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2487, 020004 (2022)
https://doi.org/10.1063/5.0093805
Published: August 2022
View article titled, Non-equilibrium doping of <em>poly</em>-Si:Ga/SiO<sub><em>x</em></sub> passivating contacts solar cells
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Journal Articles

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Hemi H. Gandhi, David Pastor, Tuan T. Tran, Stefan Kalchmair, Lachlan A. Smillie, Jonathan P. Mailoa, Ruggero Milazzo, Enrico Napolitani, Marko Loncar, James S. Williams, Michael J. Aziz, Eric Mazur
Journal: AIP Advances
AIP Advances 10, 075028 (2020)
https://doi.org/10.1063/5.0008281
Published: July 2020
View article titled, Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
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Includes: Supplementary data
Journal Articles

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

David Pastor, Hemi H. Gandhi, Corentin P. Monmeyran, Austin J. Akey, Ruggero Milazzo, Yan Cai, Enrico Napolitani, Russell M. Gwilliam, Iain F. Crowe, Jurgen Michel, L. C. Kimerling, Anuradha Agarwal, Eric Mazur, Michael J. Aziz
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 165101 (2018)
https://doi.org/10.1063/1.5012512
Published: April 2018
View article titled, High level active <em>n</em><sup>+</sup> doping of strained germanium through co-implantation and nanosecond pulsed laser melting
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Journal Articles

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Corentin Monmeyran, Iain F. Crowe, Russell M. Gwilliam, Christopher Heidelberger, Enrico Napolitani, David Pastor, Hemi H. Gandhi, Eric Mazur, Jürgen Michel, Anuradha M. Agarwal, Lionel C. Kimerling
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161524 (2018)
https://doi.org/10.1063/1.4999210
Published: November 2017
View article titled, Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique
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Journal Articles

Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment

Alexei N. Nazarov, Volodymyr O. Yukhymchuk, Yurii V. Gomeniuk, Sergiy B. Kryvyi, Pavel N. Okholin, Petro M. Lytvyn, Vasyl P. Kladko, Volodymyr S. Lysenko, Volodymyr I. Glotov, Illya E. Golentus, Enrico Napolitani, Ray Duffy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 051203 (2017)
https://doi.org/10.1116/1.4996139
Published: August 2017
View article titled, Enhanced recrystallization and dopant activation of P<sup>+</sup> ion-implanted super-thin Ge layers by RF hydrogen plasma treatment
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Journal Articles

SIMS characterization of surface-modified nanostructured titania electrodes for solar energy conversion devices

Stefania Vitale, Gabriella Zappalà, Nunzio Tuccitto, Alberto Torrisi, Enrico Napolitani, Antonino Licciardello
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 03H110 (2016)
https://doi.org/10.1116/1.4941428
Published: February 2016
View article titled, SIMS characterization of surface-modified nanostructured titania electrodes for solar energy conversion devices
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Includes: Supplementary data
Journal Articles

Detailed arsenic concentration profiles at Si / SiO 2 interfaces

Lirong Pei, Gerd Duscher, Christian Steen, Peter Pichler, Heiner Ryssel, Enrico Napolitani, Davide De Salvador, Alberto Maria Piro, Antonio Terrasi, Fabrice Severac, Filadelfo Cristiano, Karthik Ravichandran, Naveen Gupta, Wolfgang Windl
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 043507 (2008)
https://doi.org/10.1063/1.2967713
Published: August 2008
View article titled, Detailed arsenic concentration profiles at Si / SiO 2 interfaces
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Journal Articles

Depth distribution of B implanted in Si after excimer laser irradiation

Giovanni Mannino, Vittorio Privitera, Antonino La Magna, Emanuele Rimini, Enrico Napolitani, Guglielmo Fortunato, Luigi Mariucci
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 051909 (2005)
https://doi.org/10.1063/1.1856696
Published: January 2005
View article titled, Depth distribution of B implanted in Si after excimer laser irradiation
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Journal Articles

Quantitative carrier profiling in ion-implanted 6H–SiC

Filippo Giannazzo, Lucia Calcagno, Vito Raineri, Lorenzo Ciampolini, Mauro Ciappa, Enrico Napolitani
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 1211–1213 (2001)
https://doi.org/10.1063/1.1394956
Published: August 2001
View article titled, Quantitative carrier profiling in ion-implanted 6H–SiC
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Journal Articles

Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron

Giovanni Mannino, Francesco Priolo, Vittorio Privitera, Vito Raineri, Corrado Spinella, Enrico Napolitani, Alberto Carnera, Giuseppe Arena, Alberto Messina, Cirino Rapisarda
Journal: Journal of Applied Physics
J. Appl. Phys. 84, 6628–6635 (1998)
https://doi.org/10.1063/1.369037
Published: December 1998
View article titled, Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron
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Journal Articles

Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si

Francesco Priolo, Giovanni Mannino, Monica Miccichè, Vittorio Privitera, Enrico Napolitani, Alberto Carnera
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 3011–3013 (1998)
https://doi.org/10.1063/1.121524
Published: June 1998
View article titled, Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si
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