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Journal Articles

(010) β-(Al_x, Ga_1−x)₂O₃ growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy

Zhuoqun Wen, Xin Zhai, Kamruzzaman Khan, Oguz Odabasi, Mijung Kim, Elaheh Ahmadi

Appl. Phys. Lett. 125, 162103 (2024)

https://doi.org/10.1063/5.0227366

Published: October 2024

View article titled, (010) β-(Alx, Ga1−x)2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy

Journal Articles

Investigation of ALD HfSiO_x as gate dielectric on β -Ga₂O₃ (001)

Xin Zhai, Zhuoqun Wen, Oguz Odabasi, Eyosyas Achamyeleh, Kai Sun, Elaheh Ahmadi

Appl. Phys. Lett. 124, 132103 (2024)

https://doi.org/10.1063/5.0179813

Published: March 2024

View article titled, Investigation of ALD HfSiOx as gate dielectric on β -Ga2O3 (001)

Includes: Supplementary data

Journal Articles

Investigation of Si incorporation in (010) β -Ga₂O₃ films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga₂O precursor

Zhuoqun Wen, Xin Zhai, Cindy Lee, Stefan Kosanovic, Yunjo Kim, Adam T. Neal, Thaddeus Asel, Shin Mou, Elaheh Ahmadi

Appl. Phys. Lett. 124, 122101 (2024)

https://doi.org/10.1063/5.0189400

Published: March 2024

View article titled, Investigation of Si incorporation in (010) β -Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Journal Articles

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Arnob Ghosh, Kamruzzaman Khan, Shrivatch Sankar, Zhe (Ashley) Jian, Syed M. N. Hasan, Elaheh Ahmadi, Shamsul Arafin

AIP Advances 14, 025344 (2024)

https://doi.org/10.1063/5.0181213

Published: February 2024

View article titled, Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Includes: Supplementary data

Journal Articles

Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy

Md Irfan Khan, Cindy Lee, Elaheh Ahmadi

Appl. Phys. Lett. 124, 062107 (2024)

https://doi.org/10.1063/5.0167294

Published: February 2024

View article titled, Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Mingtao Hu, Ping Wang, Ding Wang, Yuanpeng Wu, Shubham Mondal, Danhao Wang, Elaheh Ahmadi, Tao Ma, Zetian Mi

APL Mater. 11, 121111 (2023)

https://doi.org/10.1063/5.0168970

Published: December 2023

View article titled, Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Journal Articles

Thermal stability of HVPE-grown (0001) α-Ga₂O₃ on sapphire template under vacuum and atmospheric environments

Zhuoqun Wen, Kamruzzaman Khan, Kai Sun, Ruby Wellen, Yuichi Oshima, Elaheh Ahmadi

J. Vac. Sci. Technol. A 41, 043403 (2023)

https://doi.org/10.1116/6.0002559

Published: May 2023

View article titled, Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments

Journal Articles

Type-II band alignment for atomic layer deposited HfSiO₄ on α-Ga₂O₃

Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. A 41, 023205 (2023)

https://doi.org/10.1116/6.0002453

Published: March 2023

View article titled, Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3

Journal Articles

Si doping of β -Ga₂O₃ by disilane via hybrid plasma-assisted molecular beam epitaxy

Zhuoqun Wen, Kamruzzaman Khan, Xin Zhai, Elaheh Ahmadi

Appl. Phys. Lett. 122, 082101 (2023)

https://doi.org/10.1063/5.0142107

Published: February 2023

View article titled, Si doping of β -Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy

Journal Articles

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga₂O₃ toward realizing power device applications

Yuichi Oshima, Elaheh Ahmadi

Appl. Phys. Lett. 121, 260501 (2022)

https://doi.org/10.1063/5.0126698

Published: December 2022

View article titled, Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Journal Articles

Band alignment of sputtered and atomic layer deposited SiO₂ and Al₂O₃ on ScAlN

Xinyi Xia, Jian-Sian Li, Md Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi, David C. Hays, Fan Ren, S. J. Pearton

J. Appl. Phys. 132, 235701 (2022)

https://doi.org/10.1063/5.0131766

Published: December 2022

View article titled, Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN

Journal Articles

Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN

Shubham Mondal, Ding Wang, Ping Wang, Yuanpeng Wu, Mingtao Hu, Yixin Xiao, Subhajit Mohanty, Tao Ma, Elaheh Ahmadi, Zetian Mi

APL Mater. 10, 121101 (2022)

https://doi.org/10.1063/5.0122943

Published: December 2022

View article titled, Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN

Includes: Supplementary data

Journal Articles

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga₂O₃ (001) substrates

Zhe (Ashley) Jian, Christopher J Clymore, Kai Sun, Umesh Mishra, Elaheh Ahmadi

Appl. Phys. Lett. 120, 142101 (2022)

https://doi.org/10.1063/5.0083556

Published: April 2022

View article titled, Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates

Journal Articles

Demonstration of device-quality 60% relaxed In_0.2Ga_0.8N on porous GaN pseudo-substrates grown by PAMBE

Christian Wurm, Henry Collins, Nirupam Hatui, Weiyi Li, Shubhra Pasayat, Robert Hamwey, Kai Sun, Islam Sayed, Kamruzzaman Khan, Elaheh Ahmadi, Stacia Keller, Umesh Mishra

J. Appl. Phys. 131, 015701 (2022)

https://doi.org/10.1063/5.0075948

Published: January 2022

View article titled, Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE

Journal Articles

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Ping Wang, Ding Wang, Boyu Wang, Subhajit Mohanty, Sandra Diez, Yuanpeng Wu, Yi Sun, Elaheh Ahmadi, Zetian Mi

Appl. Phys. Lett. 119, 082101 (2021)

https://doi.org/10.1063/5.0055851

Published: August 2021

View article titled, N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Brian Romanczyk, Matthew Guidry, Xun Zheng, Pawana Shrestha, Haoran Li, Elaheh Ahmadi, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 119, 072105 (2021)

https://doi.org/10.1063/5.0058587

Published: August 2021

View article titled, Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Journal Articles

Investigation and optimization of HfO₂ gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

Subhajit Mohanty, Islam Sayed, Zhe (Ashley) Jian, Umesh Mishra, Elaheh Ahmadi

Appl. Phys. Lett. 119, 042901 (2021)

https://doi.org/10.1063/5.0053886

Published: July 2021

View article titled, Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

Journal Articles

Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga₂O₃ (001)

Zhe (Ashley) Jian, Islam Sayed, Wenjian Liu, Subhajit Mohanty, Elaheh Ahmadi

Appl. Phys. Lett. 118, 172102 (2021)

https://doi.org/10.1063/5.0048990

Published: April 2021

View article titled, Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001)

Includes: Supplementary data

Journal Articles

Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel

Subhajit Mohanty, Sandra Diez, Zhe (Ashley) Jian, Elaheh Ahmadi

J. Appl. Phys. 128, 235701 (2020)

https://doi.org/10.1063/5.0019222

Published: December 2020

View article titled, Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel

Journal Articles

Sn doping of (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Akhil Mauze, Yuewei Zhang, Takeki Itoh, Elaheh Ahmadi, James S. Speck

Appl. Phys. Lett. 117, 222102 (2020)

https://doi.org/10.1063/5.0027870

Published: December 2020

View article titled, Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

NARROW

Topics

(010) β-(Al_x, Ga_1−x)₂O₃ growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy

Investigation of ALD HfSiO_x as gate dielectric on β -Ga₂O₃ (001)

Investigation of Si incorporation in (010) β -Ga₂O₃ films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga₂O precursor

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Thermal stability of HVPE-grown (0001) α-Ga₂O₃ on sapphire template under vacuum and atmospheric environments

Type-II band alignment for atomic layer deposited HfSiO₄ on α-Ga₂O₃

Si doping of β -Ga₂O₃ by disilane via hybrid plasma-assisted molecular beam epitaxy

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga₂O₃ toward realizing power device applications

Band alignment of sputtered and atomic layer deposited SiO₂ and Al₂O₃ on ScAlN

Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga₂O₃ (001) substrates

Demonstration of device-quality 60% relaxed In_0.2Ga_0.8N on porous GaN pseudo-substrates grown by PAMBE

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Investigation and optimization of HfO₂ gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga₂O₃ (001)

Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel

Sn doping of (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

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