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Journal Articles

Chip layout impact on stress-induced mobility degradation studied with indentation

Simon Schlipf, André Clausner, Jens Paul, Simone Capecchi, Laura Wambera, Karsten Meier, Ehrenfried Zschech

J. Vac. Sci. Technol. B 38, 063206 (2020)

https://doi.org/10.1116/6.0000581

Published: November 2020

View articletitled, Chip layout impact on stress-induced mobility degradation studied with indentation

Journal Articles

Investigations of internal stresses in high-voltage devices with deep trenches

Ellen Hieckmann, Uwe Mühle, Paul Chekhonin, Ehrenfried Zschech, Jeff Gambino

J. Vac. Sci. Technol. B 38, 064004 (2020)

https://doi.org/10.1116/6.0000515

Published: November 2020

View articletitled, Investigations of internal stresses in high-voltage devices with deep trenches

Journal Articles

A dedicated illumination for full-field X-ray microscopy with multilayer Laue lenses

Sven Niese, Stefan Braun, Reiner Dietsch, Jürgen Gluch, Thomas Holz, Norman Huber, Adam Kubec, Ehrenfried Zschech

AIP Conf. Proc. 1764, 020002 (2016)

https://doi.org/10.1063/1.4961130

Published: August 2016

View articletitled, A dedicated illumination for full-field X-ray microscopy with multilayer Laue lenses

Journal Articles

Lateral damage in graphene carved by high energy focused gallium ion beams

Zhongquan Liao, Tao Zhang, Martin Gall, Arezoo Dianat, Rüdiger Rosenkranz, Rainer Jordan, Gianaurelio Cuniberti, Ehrenfried Zschech

Appl. Phys. Lett. 107, 013108 (2015)

https://doi.org/10.1063/1.4926647

Published: July 2015

View articletitled, Lateral damage in graphene carved by high energy focused gallium ion beams

Includes: Supplementary data

Journal Articles

Preface: Stress-Induced Phenomena and Reliability in 3D Microelectronics

Paul S. Ho, Chao-Kun Hu, Mark Nakamoto, Shinichi Ogawa, Larry Smith, Valeriy Sukharev, Ehrenfried Zschech

AIP Conf. Proc. 1601, 1–2 (2014)

https://doi.org/10.1063/1.4881337

Published: June 2014

View articletitled, Preface: Stress-Induced Phenomena and Reliability in 3D Microelectronics

Journal Articles

Physics-based simulation of EM and SM in TSV-based 3D IC structures

Armen Kteyan, Valeriy Sukharev, Ehrenfried Zschech

AIP Conf. Proc. 1601, 114–127 (2014)

https://doi.org/10.1063/1.4881345

Published: June 2014

View articletitled, Physics-based simulation of EM and SM in TSV-based 3D IC structures

Journal Articles

Advanced concepts for TDDB reliability in conjunction with 3D stress

Martin Gall, Kong Boon Yeap, Ehrenfried Zschech

AIP Conf. Proc. 1601, 79–88 (2014)

https://doi.org/10.1063/1.4881342

Published: June 2014

View articletitled, Advanced concepts for TDDB reliability in conjunction with 3D stress

Journal Articles

Multi-scale simulation flow and multi-scale materials characterization for stress management in 3D through-silicon-via integration technologies – Effect of stress on 3D IC interconnect reliability

Valeriy Sukharev, Ehrenfried Zschech

AIP Conf. Proc. 1601, 18–54 (2014)

https://doi.org/10.1063/1.4881339

Published: June 2014

View articletitled, Multi-scale simulation flow and multi-scale materials characterization for stress management in 3D through-silicon-via integration technologies – Effect of stress on 3D IC interconnect reliability

Journal Articles

In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms

Kong Boon Yeap, Martin Gall, Zhongquan Liao, Christoph Sander, Uwe Muehle, Patrick Justison, Oliver Aubel, Meike Hauschildt, Armand Beyer, Norman Vogel, Ehrenfried Zschech

J. Appl. Phys. 115, 124101 (2014)

https://doi.org/10.1063/1.4869403

Published: March 2014

View articletitled, In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms

Journal Articles

Metrology and Failure Analysis for 3D IC Integration

Ehrenfried Zschech, Alain Diebold

AIP Conf. Proc. 1395, 233–239 (2011)

https://doi.org/10.1063/1.3657897

Published: November 2011

View articletitled, Metrology and Failure Analysis for 3D IC Integration

Journal Articles

Nanomechanical Characterization and Metrology for Low‐k and ULK Materials

Ude D. Hangen, Kong‐Boon Yeap, David Vodnick, Ehrenfried Zschech, Han Li, Joost Vlassak

AIP Conf. Proc. 1395, 240–248 (2011)

https://doi.org/10.1063/1.3657898

Published: November 2011

View articletitled, Nanomechanical Characterization and Metrology for Low‐k and ULK Materials

Journal Articles

PREFACE

Ehrenfried Zschech, Riko Radojcic, Valeriy Sukharev, Larry Smith

AIP Conf. Proc. 1378, 1 (2011)

https://doi.org/10.1063/1.3615692

Published: September 2011

View articletitled, PREFACE

Journal Articles

Nanoindentation Study Of Elastic Anisotropy Of Cu Single Crystals And Grains In TSVs

Kong Boon Yeap, Ude D. Hangen, Dierk Raabe, Ehrenfried Zschech

AIP Conf. Proc. 1378, 121–128 (2011)

https://doi.org/10.1063/1.3615699

Published: September 2011

View articletitled, Nanoindentation Study Of Elastic Anisotropy Of Cu Single Crystals And Grains In TSVs

Journal Articles

NanoXCT—A High‐Resolution Technique For TSV Characterization

Sven Niese, Peter Krueger, Ehrenfried Zschech

AIP Conf. Proc. 1378, 168–173 (2011)

https://doi.org/10.1063/1.3615703

Published: September 2011

View articletitled, NanoXCT—A High‐Resolution Technique For TSV Characterization

Journal Articles

Multi‐Scale Environment For Simulation And Materials Characterization In Stress Management For 3D IC TSV‐Based Technologies—Effect Of Stress On The Device Characteristics

Valeriy Sukharev, Ehrenfried Zschech

AIP Conf. Proc. 1378, 21–49 (2011)

https://doi.org/10.1063/1.3615694

Published: September 2011

View articletitled, Multi‐Scale Environment For Simulation And Materials Characterization In Stress Management For 3D IC TSV‐Based Technologies—Effect Of Stress On The Device Characteristics

Journal Articles

Grain Size And Cap Layer Effects On Electromigration Reliability Of Cu Interconnects: Experiments And Simulation

Lijuan Zhang, Matthias Kraatz, Oliver Aubel, Christian Hennesthal, Ehrenfried Zschech, Paul S. Ho

AIP Conf. Proc. 1300, 3–11 (2010)

https://doi.org/10.1063/1.3527136

Published: November 2010

View articletitled, Grain Size And Cap Layer Effects On Electromigration Reliability Of Cu Interconnects: Experiments And Simulation

Journal Articles

Conical Dark‐Field Analysis For Small Grain Characterization In Narrow Cu Interconnect Structures: Potential And Challenges

René Hübner, Hans‐Jürgen Engelmann, Ehrenfried Zschech

AIP Conf. Proc. 1300, 39–46 (2010)

https://doi.org/10.1063/1.3527135

Published: November 2010

View articletitled, Conical Dark‐Field Analysis For Small Grain Characterization In Narrow Cu Interconnect Structures: Potential And Challenges

Journal Articles

Cohesive Toughness Of Low‐k Film With Periodically Changing Elastic Modulus: Cube‐Corner Indentation

Kong Boon Yeap, Ude Hangen, Yvonne Ritz, Taek‐Soo Kim, Reinhold Dauskardt, Ehrenfried Zschech

AIP Conf. Proc. 1300, 159–165 (2010)

https://doi.org/10.1063/1.3527123

Published: November 2010

View articletitled, Cohesive Toughness Of Low‐k Film With Periodically Changing Elastic Modulus: Cube‐Corner Indentation

Journal Articles

Sub‐imaging Techniques For 3D‐Interconnects On Bonded Wafer Pairs

Lay Wai Kong, Peter Krueger, Ehrenfried Zschech, Andrew C. Rudack, Sitaram Arkalgud, Alain C. Diebold

AIP Conf. Proc. 1300, 221–228 (2010)

https://doi.org/10.1063/1.3527129

Published: November 2010

View articletitled, Sub‐imaging Techniques For 3D‐Interconnects On Bonded Wafer Pairs

Journal Articles

Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy

Ehrenfried Zschech, Rene Huebner, Dmytro Chumakov, Oliver Aubel, Daniel Friedrich, Peter Guttmann, Stefan Heim, Gerd Schneider

J. Appl. Phys. 106, 093711 (2009)

https://doi.org/10.1063/1.3254166

Published: November 2009

View articletitled, Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy

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Chip layout impact on stress-induced mobility degradation studied with indentation

Investigations of internal stresses in high-voltage devices with deep trenches

A dedicated illumination for full-field X-ray microscopy with multilayer Laue lenses

Lateral damage in graphene carved by high energy focused gallium ion beams

Preface: Stress-Induced Phenomena and Reliability in 3D Microelectronics

Physics-based simulation of EM and SM in TSV-based 3D IC structures

Advanced concepts for TDDB reliability in conjunction with 3D stress

Multi-scale simulation flow and multi-scale materials characterization for stress management in 3D through-silicon-via integration technologies – Effect of stress on 3D IC interconnect reliability

In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms

Metrology and Failure Analysis for 3D IC Integration

Nanomechanical Characterization and Metrology for Low‐k and ULK Materials

PREFACE

Nanoindentation Study Of Elastic Anisotropy Of Cu Single Crystals And Grains In TSVs

NanoXCT—A High‐Resolution Technique For TSV Characterization

Multi‐Scale Environment For Simulation And Materials Characterization In Stress Management For 3D IC TSV‐Based Technologies—Effect Of Stress On The Device Characteristics

Grain Size And Cap Layer Effects On Electromigration Reliability Of Cu Interconnects: Experiments And Simulation

Conical Dark‐Field Analysis For Small Grain Characterization In Narrow Cu Interconnect Structures: Potential And Challenges

Cohesive Toughness Of Low‐k Film With Periodically Changing Elastic Modulus: Cube‐Corner Indentation

Sub‐imaging Techniques For 3D‐Interconnects On Bonded Wafer Pairs

Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy

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