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Journal Articles

Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions

Tae-Hyeon Kim, Alec M. Skipper, Seth R. Bank, Edward T. Yu

J. Appl. Phys. 137, 075702 (2025)

https://doi.org/10.1063/5.0240080

Published: February 2025

View articletitled, Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions

Journal Articles

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Tae-Hyeon Kim, Kai Fu, Chen Yang, Yuji Zhao, Edward T. Yu

J. Appl. Phys. 131, 015704 (2022)

https://doi.org/10.1063/5.0071422

Published: January 2022

View articletitled, Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Journal Articles

Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides

Alex C. De Palma, Gabriel Cossio, Kayleigh Jones, Jiamin Quan, Xiaoqin Li, Edward T. Yu

J. Vac. Sci. Technol. B 38, 042205 (2020)

https://doi.org/10.1116/6.0000251

Published: July 2020

View articletitled, Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides

Journal Articles

Out-of-plane electromechanical coupling in transition metal dichalcogenides

Christopher J. Brennan, Kalhan Koul, Nanshu Lu, Edward T. Yu

Appl. Phys. Lett. 116, 053101 (2020)

https://doi.org/10.1063/1.5134091

Published: February 2020

View articletitled, Out-of-plane electromechanical coupling in transition metal dichalcogenides

Includes: Supplementary data

Journal Articles

Crystalline SrZrO₃ deposition on Ge (001) by atomic layer deposition for high-k dielectric applications

Shen Hu, Li Ji, Pei-Yu Chen, Bryce I. Edmondson, Heng-Lu Chang, Agham Posadas, Hsin Wei Wu, Edward T. Yu, David J. Smith, Alexander A. Demkov, John G. Ekerdt

J. Appl. Phys. 124, 044102 (2018)

https://doi.org/10.1063/1.5026790

Published: July 2018

View articletitled, Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications

Includes: Supplementary data

Journal Articles

Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

Soonil Lee, Jaehyun Ahn, Leo Mathew, Rajesh Rao, Zhongjian Zhang, Jae Hyun Kim, Sanjay K. Banerjee, Edward T. Yu

J. Appl. Phys. 123, 163101 (2018)

https://doi.org/10.1063/1.5023000

Published: April 2018

View articletitled, Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

Journal Articles

Atomic layer deposition of crystalline SrHfO₃ directly on Ge (001) for high-k dielectric applications

Martin D. McDaniel, Chengqing Hu, Sirong Lu, Thong Q. Ngo, Agham Posadas, Aiting Jiang, David J. Smith, Edward T. Yu, Alexander A. Demkov, John G. Ekerdt

J. Appl. Phys. 117, 054101 (2015)

https://doi.org/10.1063/1.4906953

Published: February 2015

View articletitled, Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

Journal Articles

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

Xiaohan Li, Vaishno D. Dasika, Ping-Chun Li, Li Ji, Seth R. Bank, Edward T. Yu

Appl. Phys. Lett. 105, 123906 (2014)

https://doi.org/10.1063/1.4896739

Published: September 2014

View articletitled, Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

Journal Articles

Epitaxial c-axis oriented BaTiO₃ thin films on SrTiO₃-buffered Si(001) by atomic layer deposition

Thong Q. Ngo, Agham B. Posadas, Martin D. McDaniel, Chengqing Hu, John Bruley, Edward T. Yu, Alexander A. Demkov, John G. Ekerdt

Appl. Phys. Lett. 104, 082910 (2014)

https://doi.org/10.1063/1.4867469

Published: February 2014

View articletitled, Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

Journal Articles

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO₃/SrTiO₃ heterostructures

Chengqing Hu, Keun Woo Park, Agham Posadas, Jean L. Jordan-Sweet, Alexander A. Demkov, Edward T. Yu

J. Appl. Phys. 114, 183909 (2013)

https://doi.org/10.1063/1.4831673

Published: November 2013

View articletitled, Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

Includes: Supplementary data

Journal Articles

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiO_x-based resistive switching memory

Yao-Feng Chang, Li Ji, Yanzhen Wang, Pai-Yu Chen, Fei Zhou, Fei Xue, Burt Fowler, Edward T. Yu, Jack C. Lee

Appl. Phys. Lett. 103, 193508 (2013)

https://doi.org/10.1063/1.4829526

Published: November 2013

View articletitled, Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

Journal Articles

Flexible, low-loss, large-area, wide-angle, wavelength-selective plasmonic multilayer metasurface

Ping-Chun Li, Edward T. Yu

J. Appl. Phys. 114, 133104 (2013)

https://doi.org/10.1063/1.4824371

Published: October 2013

View articletitled, Flexible, low-loss, large-area, wide-angle, wavelength-selective plasmonic multilayer metasurface

Includes: Supplementary data

Journal Articles

Oxygen-induced bi-modal failure phenomenon in SiO_x-based resistive switching memory

Yao-Feng Chang, Li Ji, Zhuo-Jie Wu, Fei Zhou, Yanzhen Wang, Fei Xue, Burt Fowler, Edward T. Yu, Paul S. Ho, Jack C. Lee

Appl. Phys. Lett. 103, 033521 (2013)

https://doi.org/10.1063/1.4816162

Published: July 2013

View articletitled, Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

Journal Articles

Experimental realization and modeling of a subwavelength frequency-selective plasmonic metasurface

Ping-Chun Li, Yang Zhao, Andrea Alù, Edward T. Yu

Appl. Phys. Lett. 99, 221106 (2011)

https://doi.org/10.1063/1.3664634

Published: November 2011

View articletitled, Experimental realization and modeling of a subwavelength frequency-selective plasmonic metasurface

Journal Articles

Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device

Lei Zhu, Edward T. Yu

Appl. Phys. Lett. 98, 142115 (2011)

https://doi.org/10.1063/1.3567922

Published: April 2011

View articletitled, Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device

Includes: Supplementary data

Journal Articles

Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

Wilhelm Melitz, Jian Shen, Sangyeob Lee, Joon Sung Lee, Andrew C. Kummel, Ravi Droopad, Edward T. Yu

J. Appl. Phys. 108, 023711 (2010)

https://doi.org/10.1063/1.3462440

Published: July 2010

View articletitled, Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

Journal Articles

Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

Shadi A. Dayeh, Peng Chen, Yi Jing, Edward T. Yu, S. S. Lau, Deli Wang

Appl. Phys. Lett. 93, 203109 (2008)

https://doi.org/10.1063/1.3013566

Published: November 2008

View articletitled, Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

Journal Articles

Transport properties of InAs nanowire field effect transistors: The effects of surface states

Shadi A. Dayeh, Cesare Soci, Paul K. L. Yu, Edward T. Yu, Deli Wang

J. Vac. Sci. Technol. B 25, 1432–1436 (2007)

https://doi.org/10.1116/1.2748410

Published: July 2007

View articletitled, Transport properties of InAs nanowire field effect transistors: The effects of surface states

Journal Articles

Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors

Shadi A. Dayeh, Cesare Soci, Paul K. L. Yu, Edward T. Yu, Deli Wang

Appl. Phys. Lett. 90, 162112 (2007)

https://doi.org/10.1063/1.2728762

Published: April 2007

View articletitled, Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors

Journal Articles

Lateral variations in threshold voltage of an Al x Ga 1−x N/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

Daniel M. Schaadt, Eric J. Miller, Edward T. Yu, Joan M. Redwing

Appl. Phys. Lett. 78, 88–90 (2001)

https://doi.org/10.1063/1.1335840

Published: January 2001

View articletitled, Lateral variations in threshold voltage of an Al x Ga 1−x N/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

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Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides

Out-of-plane electromechanical coupling in transition metal dichalcogenides

Crystalline SrZrO₃ deposition on Ge (001) by atomic layer deposition for high-k dielectric applications

Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

Atomic layer deposition of crystalline SrHfO₃ directly on Ge (001) for high-k dielectric applications

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

Epitaxial c-axis oriented BaTiO₃ thin films on SrTiO₃-buffered Si(001) by atomic layer deposition

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO₃/SrTiO₃ heterostructures

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiO_x-based resistive switching memory

Flexible, low-loss, large-area, wide-angle, wavelength-selective plasmonic multilayer metasurface

Oxygen-induced bi-modal failure phenomenon in SiO_x-based resistive switching memory

Experimental realization and modeling of a subwavelength frequency-selective plasmonic metasurface

Ballistic transport and electrical spin signal enhancement in a nanoscale three-terminal spintronic device

Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

Transport properties of InAs nanowire field effect transistors: The effects of surface states

Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors

Lateral variations in threshold voltage of an Al x Ga 1−x N/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

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