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Journal Articles

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen, Stefan De Gendt, Arturo Sibaja-Hernandez, Jinyan Wang

J. Appl. Phys. 130, 205701 (2021)

https://doi.org/10.1063/5.0066681

Published: November 2021

View articletitled, Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Journal Articles

Bandlike and localized states of extended defects in n-type In_0.53Ga_0.47As

Po-Chun (Brent) Hsu, Eddy Simoen, Clement Merckling, Geert Eneman, Yves Mols, AliReza Alian, Robert Langer, Nadine Collaert, Marc Heyns

J. Appl. Phys. 124, 165707 (2018)

https://doi.org/10.1063/1.5046827

Published: October 2018

View articletitled, Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Journal Articles

Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen, Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert, Henk Vrielinck, Marc Heyns

Appl. Phys. Lett. 113, 022102 (2018)

https://doi.org/10.1063/1.5034573

Published: July 2018

View articletitled, Electrical properties of extended defects in strain relaxed GeSn

Journal Articles

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Eddy Simoen, Hariharsudan Sivaramakrishnan Radhakrishnan, Md. Gius Uddin, Ivan Gordon, Jef Poortmans, Chong Wang, Wei Li

J. Vac. Sci. Technol. B 36, 041201 (2018)

https://doi.org/10.1116/1.5026529

Published: June 2018

View articletitled, Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Journal Articles

Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

Mazharuddin Mohammed, Anne S. Verhulst, Devin Verreck, Maarten Van de Put, Eddy Simoen, Bart Sorée, Ben Kaczer, Robin Degraeve, Anda Mocuta, Nadine Collaert, Aaron Thean, Guido Groeseneken

J. Appl. Phys. 120, 245704 (2016)

https://doi.org/10.1063/1.4972482

Published: December 2016

View articletitled, Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

Journal Articles

Probing the effect of point defects on the leakage blocking capability of Al_0.1Ga_0.9N/Si structures using a monoenergetic positron beam

Akira Uedono, Ming Zhao, Eddy Simoen

J. Appl. Phys. 120, 215702 (2016)

https://doi.org/10.1063/1.4970984

Published: December 2016

View articletitled, Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Journal Articles

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Sathish Kumar Dhayalan, Jiri Kujala, Jonatan Slotte, Geoffrey Pourtois, Eddy Simoen, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, Serena Iacovo, Andre Stesmans, Roger Loo, Wilfried Vandervorst

Appl. Phys. Lett. 108, 082106 (2016)

https://doi.org/10.1063/1.4942605

Published: February 2016

View articletitled, On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Journal Articles

Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Qian Wu, Marc Porti, Albin Bayerl, Javier Martin-Martínez, Rosana Rodriguez, Montserrat Nafria, Xavier Aymerich, Eddy Simoen

J. Vac. Sci. Technol. B 33, 022202 (2015)

https://doi.org/10.1116/1.4913950

Published: March 2015

View articletitled, Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Journal Articles

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kuo-Hsing Kao, Anne S. Verhulst, Rita Rooyackers, Bastien Douhard, Joris Delmotte, Hugo Bender, Olivier Richard, Wilfried Vandervorst, Eddy Simoen, Andriy Hikavyy, Roger Loo, Kai Arstila, Nadine Collaert, Aaron Thean, Marc M. Heyns, Kristin De Meyer

J. Appl. Phys. 116, 214506 (2014)

https://doi.org/10.1063/1.4903288

Published: December 2014

View articletitled, Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Journal Articles

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Quentin Smets, Anne S. Verhulst, Koen Martens, Han Chung Lin, Salim El Kazzi, Devin Verreck, Eddy Simoen, Nadine Collaert, Aaron Thean, Jean-Pierre Raskin, Marc M. Heyns

Appl. Phys. Lett. 105, 203507 (2014)

https://doi.org/10.1063/1.4902117

Published: November 2014

View articletitled, Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Journal Articles

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

Quentin Smets, Devin Verreck, Anne S. Verhulst, Rita Rooyackers, Clément Merckling, Maarten Van De Put, Eddy Simoen, Wilfried Vandervorst, Nadine Collaert, Voon Y. Thean, Bart Sorée, Guido Groeseneken, Marc M. Heyns

J. Appl. Phys. 115, 184503 (2014)

https://doi.org/10.1063/1.4875535

Published: May 2014

View articletitled, InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

Journal Articles

Deep-level transient spectroscopy on an amorphous InGaZnO₄ Schottky diode

Adrian Chasin, Eddy Simoen, Ajay Bhoolokam, Manoj Nag, Jan Genoe, Georges Gielen, Paul Heremans

Appl. Phys. Lett. 104, 082112 (2014)

https://doi.org/10.1063/1.4867236

Published: February 2014

View articletitled, Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

Journal Articles

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Jae Woo Lee, Moon ju Cho, Eddy Simoen, Romain Ritzenthaler, Mitsuhiro Togo, Guillaume Boccardi, Jerome Mitard, Lars-Åke Ragnarsson, Thomas Chiarella, Anabela Veloso, Naoto Horiguchi, Aaron Thean, Guido Groeseneken

Appl. Phys. Lett. 102, 073503 (2013)

https://doi.org/10.1063/1.4793306

Published: February 2013

View articletitled, 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Journal Articles

Spectroscopic study of polysilicon traps by means of fast capacitance transients

Maria Toledano-Luque, Baojun Tang, Robin Degraeve, Ben Kaczer, Eddy Simoen, Jan Van Houdt, Guido Groeseneken

J. Vac. Sci. Technol. B 31, 01A110 (2013)

https://doi.org/10.1116/1.4768682

Published: December 2012

View articletitled, Spectroscopic study of polysilicon traps by means of fast capacitance transients

Journal Articles

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

Chun Gong, Eddy Simoen, Niels Posthuma, Emmanuel Van Kerschaver, Jef Poortmans, Robert Mertens

Appl. Phys. Lett. 96, 103507 (2010)

https://doi.org/10.1063/1.3358140

Published: March 2010

View articletitled, A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

Journal Articles

On the diffusion and activation of ion-implanted n-type dopants in germanium

Eddy Simoen, Jan Vanhellemont

J. Appl. Phys. 106, 103516 (2009)

https://doi.org/10.1063/1.3261838

Published: November 2009

View articletitled, On the diffusion and activation of ion-implanted n-type dopants in germanium

Journal Articles

Effect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors

Ji-Song Lim, Antonio Acosta, Scott E. Thompson, Gijs Bosman, Eddy Simoen, Toshikazu Nishida

J. Appl. Phys. 105, 054504 (2009)

https://doi.org/10.1063/1.3080127

Published: March 2009

View articletitled, Effect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors

Journal Articles

On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with Ti N ∕ Ta N ∕ Hf O 2 ∕ Si O 2 gate stack

Debabrata Maji, Felice Crupi, Gino Giusi, Calogero Pace, Eddy Simoen, Cor Claeys, V. Ramgopal Rao

Appl. Phys. Lett. 92, 163508 (2008)

https://doi.org/10.1063/1.2916821

Published: April 2008

View articletitled, On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with Ti N ∕ Ta N ∕ Hf O 2 ∕ Si O 2 gate stack

Journal Articles

Influence of dislocations in strained Si ∕ relaxed SiGe layers on n + ∕ p -junctions in a metal-oxide-semiconductor field-effect transistor technology

Geert Eneman, Eddy Simoen, Romain Delhougne, Peter Verheyen, Roger Loo, Kristin De Meyer

Appl. Phys. Lett. 87, 192112 (2005)

https://doi.org/10.1063/1.2128490

Published: November 2005

View articletitled, Influence of dislocations in strained Si ∕ relaxed SiGe layers on n + ∕ p -junctions in a metal-oxide-semiconductor field-effect transistor technology

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Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Bandlike and localized states of extended defects in n-type In_0.53Ga_0.47As

Electrical properties of extended defects in strain relaxed GeSn

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

Probing the effect of point defects on the leakage blocking capability of Al_0.1Ga_0.9N/Si structures using a monoenergetic positron beam

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

Deep-level transient spectroscopy on an amorphous InGaZnO₄ Schottky diode

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Spectroscopic study of polysilicon traps by means of fast capacitance transients

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

On the diffusion and activation of ion-implanted n-type dopants in germanium

Effect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors

On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with Ti N ∕ Ta N ∕ Hf O 2 ∕ Si O 2 gate stack

Influence of dislocations in strained Si ∕ relaxed SiGe layers on n + ∕ p -junctions in a metal-oxide-semiconductor field-effect transistor technology

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