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Journal Articles

Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

H. Kim, P. Didier, S. Zaminga, D. A. Díaz-Thomas, A. N. Baranov, J. B. Rodriguez, E. Tournié, H. Knötig, B. Schwarz, L. Cerutti, O. Spitz, F. Grillot
Journal: APL Photonics
APL Photonics 9, 106103 (2024)
https://doi.org/10.1063/5.0214252
Published: October 2024
View article titled, Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon
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Journal Articles

Erratum: “Thermal performance of GaInSb quantum well lasers for silicon photonics applications” [Appl. Phys. Lett. 118 , 101105 (2021)]

C. R. Fitch, G. W. Read, I. P. Marko, D. A. Duffy, L. Cerutti, J.-B. Rodriguez, E. Tournié, S. J. Sweeney
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 189903 (2021)
https://doi.org/10.1063/5.0054686
Published: May 2021
View article titled, Erratum: “Thermal performance of GaInSb quantum well lasers for silicon photonics applications” [Appl. Phys. Lett. 118 , 101105 (2021)]
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Journal Articles

Thermal performance of GaInSb quantum well lasers for silicon photonics applications

C. R. Fitch, G. W. Read, I. P. Marko, D. A. Duffy, L. Cerutti, J.-B. Rodriguez, E. Tournié, S. J. Sweeney
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 101105 (2021)
https://doi.org/10.1063/5.0042667
Published: March 2021
View article titled, Thermal performance of GaInSb quantum well lasers for silicon photonics applications
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Journal Articles

InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Editor’s Pick
Z. Loghmari, J.-B. Rodriguez, A. N. Baranov, M. Rio-Calvo, L. Cerutti, A. Meguekam, M. Bahriz, R. Teissier, E. Tournié
Journal: APL Photonics
APL Photonics 5, 041302 (2020)
https://doi.org/10.1063/5.0002376
Published: April 2020
View article titled, InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate
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Journal Articles

Molecular-beam epitaxy of GaInSbBi alloys

O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié, J.-B. Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 155304 (2019)
https://doi.org/10.1063/1.5096226
Published: October 2019
View article titled, Molecular-beam epitaxy of GaInSbBi alloys
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Journal Articles

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

R. Kudrawiec, J. Kopaczek, O. Delorme, M. P. Polak, M. Gladysiewicz, E. Luna, L. Cerutti, E. Tournié, J. B. Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 205706 (2019)
https://doi.org/10.1063/1.5094159
Published: May 2019
View article titled, Type I GaSb<sub>1-x</sub>Bi<sub>x</sub>/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
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Journal Articles

Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

A. Ponchet, G. Patriarche, J. B. Rodriguez, L. Cerutti, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 191601 (2018)
https://doi.org/10.1063/1.5055056
Published: November 2018
View article titled, Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode
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Journal Articles

Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

E. Luna, O. Delorme, L. Cerutti, E. Tournié, J.-B. Rodriguez, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 151905 (2018)
https://doi.org/10.1063/1.5024199
Published: April 2018
View article titled, Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications
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Journal Articles

GaSbBi/GaSb quantum well laser diodes

Editor’s Pick
O. Delorme, L. Cerutti, E. Luna, G. Narcy, A. Trampert, E. Tournié, J.-B. Rodriguez
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 222106 (2017)
https://doi.org/10.1063/1.4984799
Published: June 2017
View article titled, GaSbBi/GaSb quantum well laser diodes
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Journal Articles

Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

Featured
A. Castellano, L. Cerutti, J. B. Rodriguez, G. Narcy, A. Garreau, F. Lelarge, E. Tournié
Journal: APL Photonics
APL Photonics 2, 061301 (2017)
https://doi.org/10.1063/1.4983389
Published: May 2017
View article titled, Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si
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Journal Articles

Mid-infrared characterization of refractive indices and propagation losses in GaSb/AlXGa1−XAsSb waveguides

S. Roux, P. Barritault, O. Lartigue, L. Cerutti, E. Tournié, B. Gérard, A. Grisard
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 171901 (2015)
https://doi.org/10.1063/1.4934702
Published: October 2015
View article titled, Mid-infrared characterization of refractive indices and propagation losses in GaSb/Al<sub>X</sub>Ga<sub>1−X</sub>AsSb waveguides
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Journal Articles

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

L. Cerutti, A. Castellano, J.-B. Rodriguez, M. Bahri, L. Largeau, A. Balocchi, K. Madiomanana, F. Lelarge, G. Patriarche, X. Marie, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 101102 (2015)
https://doi.org/10.1063/1.4914884
Published: March 2015
View article titled, GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-<em>μ</em>m
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Journal Articles

Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures

A. Lenz, E. Tournié, J. Schuppang, M. Dähne, H. Eisele
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 102105 (2013)
https://doi.org/10.1063/1.4795020
Published: March 2013
View article titled, Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures
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Journal Articles

Localized surface plasmon resonances in highly doped semiconductors nanostructures

V. N'Tsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié, T. Taliercio
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 161113 (2012)
https://doi.org/10.1063/1.4760281
Published: October 2012
View article titled, Localized surface plasmon resonances in highly doped semiconductors nanostructures
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Journal Articles

Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

J. R. Reboul, L. Cerutti, J. B. Rodriguez, P. Grech, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 121113 (2011)
https://doi.org/10.1063/1.3644983
Published: September 2011
View article titled, Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
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Journal Articles

Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission

S. Ben Rejeb, M. Debbichi, M. Said, A. Gassenq, E. Tournié, P. Christol
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 093107 (2010)
https://doi.org/10.1063/1.3503513
Published: November 2010
View article titled, Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission
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Journal Articles

Highly tensile-strained, type-II, Ga 1 − x In x As / GaSb quantum wells

T. Taliercio, A. Gassenq, E. Luna, A. Trampert, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 062109 (2010)
https://doi.org/10.1063/1.3303821
Published: February 2010
View article titled, Highly tensile-strained, type-II, Ga 1 − x In x As / GaSb quantum wells
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Journal Articles

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

E. Luna, B. Satpati, J. B. Rodriguez, A. N. Baranov, E. Tournié, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 021904 (2010)
https://doi.org/10.1063/1.3291666
Published: January 2010
View article titled, Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy
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Journal Articles

Room-temperature operation of a 2.25   μ m electrically pumped laser fabricated on a silicon substrate

J. B. Rodriguez, L. Cerutti, P. Grech, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 061124 (2009)
https://doi.org/10.1063/1.3082098
Published: February 2009
View article titled, Room-temperature operation of a 2.25   μ m electrically pumped laser fabricated on a silicon substrate
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Journal Articles

GaSb-based, 2.2   μ m type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

J. B. Rodriguez, L. Cerutti, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 023506 (2009)
https://doi.org/10.1063/1.3072596
Published: January 2009
View article titled, GaSb-based, 2.2   μ m type-I laser fabricated on GaAs substrate operating continuous wave at room temperature
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