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E. R. Weber
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Journal Articles

Transition metal interaction and Ni-Fe-Cu-Si phases in silicon

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M. Heuer, T. Buonassisi, A. A. Istratov, M. D. Pickett, M. A. Marcus, A. M. Minor, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 123510 (2007)
https://doi.org/10.1063/1.2748346
Published: June 2007
View articletitled, Transition metal interaction and Ni-Fe-Cu-Si phases in silicon
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Journal Articles

Physical mechanisms of in situ surface gettering of metals in ribbon silicon for solar cells

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D. R. Khanal, T. Buonassisi, M. A. Marcus, A. A. Istratov, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 102110 (2007)
https://doi.org/10.1063/1.2711523
Published: March 2007
View articletitled, Physical mechanisms of in situ surface gettering of metals in ribbon silicon for solar cells
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Journal Articles

Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

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T. Buonassisi, A. A. Istratov, M. D. Pickett, M. A. Marcus, T. F. Ciszek, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 042102 (2006)
https://doi.org/10.1063/1.2234570
Published: July 2006
View articletitled, Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration
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Journal Articles

Effects of stoichiometry on electrical, optical, and structural properties of indium nitride

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J. C. Ho, P. Specht, Q. Yang, X. Xu, D. Hao, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 093712 (2005)
https://doi.org/10.1063/1.2130514
Published: November 2005
View articletitled, Effects of stoichiometry on electrical, optical, and structural properties of indium nitride
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Journal Articles

Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells

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T. Buonassisi, A. A. Istratov, S. Peters, C. Ballif, J. Isenberg, S. Riepe, W. Warta, R. Schindler, G. Willeke, Z. Cai, B. Lai, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 121918 (2005)
https://doi.org/10.1063/1.2048819
Published: September 2005
View articletitled, Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells
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Journal Articles

Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

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X. Xu, P. Specht, R. Armitage, J. C. Ho, E. R. Weber, C. Kisielowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 092102 (2005)
https://doi.org/10.1063/1.2035330
Published: August 2005
View articletitled, Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy
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Journal Articles

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

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T. Buonassisi, A. A. Istratov, M. D. Pickett, M. A. Marcus, G. Hahn, S. Riepe, J. Isenberg, W. Warta, G. Willeke, T. F. Ciszek, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 044101 (2005)
https://doi.org/10.1063/1.1997274
Published: July 2005
View articletitled, Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current
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Journal Articles

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

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X. Xu, R. Armitage, Satoko Shinkai, Katsutaka Sasaki, C. Kisielowski, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 182104 (2005)
https://doi.org/10.1063/1.1923192
Published: April 2005
View articletitled, Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer
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Journal Articles

Analysis of the carbon-related “blue” luminescence in GaN

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R. Armitage, Q. Yang, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 073524 (2005)
https://doi.org/10.1063/1.1856224
Published: March 2005
View articletitled, Analysis of the carbon-related “blue” luminescence in GaN
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Journal Articles

Nickel solubility in intrinsic and doped silicon

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A. A. Istratov, P. Zhang, R. J. McDonald, A. R. Smith, M. Seacrist, J. Moreland, J. Shen, R. Wahlich, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 023505 (2005)
https://doi.org/10.1063/1.1836852
Published: December 2004
View articletitled, Nickel solubility in intrinsic and doped silicon
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Journal Articles

Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon

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A. A. Istratov, W. Huber, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 4472–4474 (2004)
https://doi.org/10.1063/1.1819512
Published: November 2004
View articletitled, Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon
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Journal Articles

Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces

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Ph. Ebert, N. D. Jäger, K. Urban, E. R. Weber
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2018–2025 (2004)
https://doi.org/10.1116/1.1771680
Published: August 2004
View articletitled, Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces
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Journal Articles

Effects of electron concentration on the optical absorption edge of InN

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J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, Hai Lu, William J. Schaff, A. Barcz, R. Jakiela
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 2805–2807 (2004)
https://doi.org/10.1063/1.1704853
Published: April 2004
View articletitled, Effects of electron concentration on the optical absorption edge of InN
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Journal Articles

Observation of transition metals at shunt locations in multicrystalline silicon solar cells

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T. Buonassisi, O. F. Vyvenko, A. A. Istratov, E. R. Weber, G. Hahn, D. Sontag, J. P. Rakotoniaina, O. Breitenstein, J. Isenberg, R. Schindler
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 1556–1561 (2004)
https://doi.org/10.1063/1.1636252
Published: February 2004
View articletitled, Observation of transition metals at shunt locations in multicrystalline silicon solar cells
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Journal Articles

Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length

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A. A. Istratov, T. Buonassisi, R. J. McDonald, A. R. Smith, R. Schindler, J. A. Rand, J. P. Kalejs, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 6552–6559 (2003)
https://doi.org/10.1063/1.1618912
Published: November 2003
View articletitled, Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length
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Journal Articles

Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain

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N. A. Shapiro, H. Feick, W. Hong, M. Cich, R. Armitage, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 4520–4529 (2003)
https://doi.org/10.1063/1.1607521
Published: October 2003
View articletitled, Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain
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Journal Articles

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

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R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, E. R. Weber, S. Hautakangas, K. Saarinen
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3457–3459 (2003)
https://doi.org/10.1063/1.1578169
Published: May 2003
View articletitled, Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
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Journal Articles

Nanoscale dopant-induced dots and potential fluctuations in GaAs

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N. D. Jäger, K. Urban, E. R. Weber, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2700–2702 (2003)
https://doi.org/10.1063/1.1569419
Published: April 2003
View articletitled, Nanoscale dopant-induced dots and potential fluctuations in GaAs
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Journal Articles

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

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J. Gebauer, E. R. Weber, N. D. Jäger, K. Urban, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2059–2061 (2003)
https://doi.org/10.1063/1.1563835
Published: March 2003
View articletitled, Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy
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Journal Articles

Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs

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S. Y. Tzeng, M. J. Cich, R. Zhao, H. Feick, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 1063–1065 (2003)
https://doi.org/10.1063/1.1555710
Published: February 2003
View articletitled, Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs
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