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Journal Articles

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

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S. Schulz, D. S. P. Tanner, E. P. O'Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, P. Dawson
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 223102 (2016)
https://doi.org/10.1063/1.4968591
Published: November 2016
View articletitled, Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
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Journal Articles

Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys

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S. Schulz, M. A. Caro, E. P. O'Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 172102 (2014)
https://doi.org/10.1063/1.4872317
Published: April 2014
View articletitled, Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys
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Journal Articles

Refractive index dynamics of InAs/GaAs quantum dots

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M. T. Crowley, J. Houlihan, T. Piwonski, I. O'Driscoll, D. P. Williams, E. P. O'Reilly, A. V. Uskov, G. Huyet
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 021114 (2013)
https://doi.org/10.1063/1.4813472
Published: July 2013
View articletitled, Refractive index dynamics of InAs/GaAs quantum dots
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Journal Articles

Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

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S. Schulz, M. A. Caro, E. P. O'Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 113107 (2012)
https://doi.org/10.1063/1.4752108
Published: September 2012
View articletitled, Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots
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Journal Articles

Built-in field reduction in InGaN/GaN quantum dot molecules

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S. Schulz, E. P. O’Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 223106 (2011)
https://doi.org/10.1063/1.3665069
Published: December 2011
View articletitled, Built-in field reduction in InGaN/GaN quantum dot molecules
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Journal Articles

Built-in field control in alloyed c -plane III-N quantum dots and wells

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M. A. Caro, S. Schulz, S. B. Healy, E. P. O’Reilly
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 084110 (2011)
https://doi.org/10.1063/1.3563568
Published: April 2011
View articletitled, Built-in field control in alloyed c -plane III-N quantum dots and wells
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Journal Articles

An analysis of 1.55 μ m   In As ∕ In P quantum dash lasers

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S. C. Heck, S. B. Healy, S. Osborne, E. P. O’Reilly, F. Lelarge, F. Poingt, A. Accard, F. Pommereau, O. Le Gouezigou, B. Dagens
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 251105 (2008)
https://doi.org/10.1063/1.2952194
Published: June 2008
View articletitled, An analysis of 1.55 μ m   In As ∕ In P quantum dash lasers
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Journal Articles

Band Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells

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K. Hild, S. J. Sweeney, S. R. Jin, S. B. Healy, E. P. O’Reilly, S. R. Johnson, J.‐B. Wang, Y.‐H. Zhang
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 1431–1432 (2007)
https://doi.org/10.1063/1.2730443
Published: April 2007
View articletitled, Band Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells
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Journal Articles

Photoluminescence under magnetic field and hydrostatic pressure in GaAs1−xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio

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F. Masia, G. Pettinari, A. Polimeni, M. Felici, R. Trotta, M. Capizzi, T. Niebling, H. Günther, P. J. Klar, W. Stolz, A. Lindsay, E. P. O’Reilly, M. Piccin, G. Bais, S. Rubini, F. Martelli, A. Franciosi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 157–158 (2007)
https://doi.org/10.1063/1.2729817
Published: April 2007
View articletitled, Photoluminescence under magnetic field and hydrostatic pressure in GaAs1−xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio
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Journal Articles

Analytical Determination of Exciton Energy in GaN/AlN Quantum Dots

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D. P. Williams, A. D. Andreev, E. P. O’Reilly
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 933–934 (2007)
https://doi.org/10.1063/1.2730199
Published: April 2007
View articletitled, Analytical Determination of Exciton Energy in GaN/AlN Quantum Dots
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Journal Articles

Optical matrix element in InAs ∕ GaAs quantum dots: Dependence on quantum dot parameters

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A. D. Andreev, E. P. O’Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 213106 (2005)
https://doi.org/10.1063/1.2130378
Published: November 2005
View articletitled, Optical matrix element in InAs ∕ GaAs quantum dots: Dependence on quantum dot parameters
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Journal Articles

Theoretical And Experimental Investigation Of Biexcitons And Charged Excitons In InGaN Single Quantum Dots

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D. P. Williams, A. D. Andreev, E. P. O’Reilly, J. H. Rice, J. W. Robinson, A. Jarjour, J. D. Smith, R. A. Taylor, G. A. D. Briggs, Y. Arakawa, S. Yasin
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 695–696 (2005)
https://doi.org/10.1063/1.1994296
Published: June 2005
View articletitled, Theoretical And Experimental Investigation Of Biexcitons And Charged Excitons In InGaN Single Quantum Dots
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Journal Articles

Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells

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R. Fehse, S. J. Sweeney, A. R. Adams, E. P. O’Reilly, D. McConville, H. Riechert, L. Geelhaar
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 985–986 (2005)
https://doi.org/10.1063/1.1994440
Published: June 2005
View articletitled, Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells
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Journal Articles

Theory of improved spectral purity in index patterned Fabry-Pérot lasers

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S. O’Brien, E. P. O’Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 201101 (2005)
https://doi.org/10.1063/1.1919389
Published: May 2005
View articletitled, Theory of improved spectral purity in index patterned Fabry-Pérot lasers
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Journal Articles

Theoretical study of Auger recombination in a GaInNAs 1.3 μ m quantum well laser structure

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A. D. Andreev, E. P. O’Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 1826–1828 (2004)
https://doi.org/10.1063/1.1664033
Published: March 2004
View articletitled, Theoretical study of Auger recombination in a GaInNAs 1.3 μ m quantum well laser structure
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Journal Articles

Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

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A. V. Uskov, E. P. O’Reilly, D. McPeake, N. N. Ledentsov, D. Bimberg, G. Huyet
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 272–274 (2004)
https://doi.org/10.1063/1.1639933
Published: January 2004
View articletitled, Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states
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Journal Articles

Intrinsic limits on electron mobility in dilute nitride semiconductors

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S. Fahy, E. P. O’Reilly
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 3731–3733 (2003)
https://doi.org/10.1063/1.1622444
Published: November 2003
View articletitled, Intrinsic limits on electron mobility in dilute nitride semiconductors
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Journal Articles

Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

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M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O’Reilly, B. Borchert, A. Yu. Egorov, H. Riechert
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 3009–3011 (2001)
https://doi.org/10.1063/1.1371963
Published: May 2001
View articletitled, Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
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Journal Articles

Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers

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A. D. Andreev, E. P. O’Reilly, A. R. Adams, T. Ashley
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 2640–2642 (2001)
https://doi.org/10.1063/1.1369146
Published: April 2001
View articletitled, Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers
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Journal Articles

Auger recombination in long-wavelength infrared InN x Sb 1−x alloys

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B. N. Murdin, M. Kamal-Saadi, A. Lindsay, E. P. O’Reilly, A. R. Adams, G. J. Nott, J. G. Crowder, C. R. Pidgeon, I. V. Bradley, J.-P. R. Wells, T. Burke, A. D. Johnson, T. Ashley
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 1568–1570 (2001)
https://doi.org/10.1063/1.1355301
Published: March 2001
View articletitled, Auger recombination in long-wavelength infrared InN x Sb 1−x alloys
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