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Journal Articles

Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

J. Cañas, A. Grenier, J. L. Rouviere, A. Harikumar, S. Ndiaye, A. Jannaud, E. Monroy, L. Rigutti
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112101 (2025)
https://doi.org/10.1063/5.0242659
Published: March 2025
View articletitled, Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography
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Journal Articles

Absorption in ultrathin GaN-based membranes: The role of standing wave effects

E. A. Amargianitakis, R. Jayaprakash, F. G. Kalaitzakis, E. Delamadeleine, E. Monroy, N. T. Pelekanos
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 083109 (2019)
https://doi.org/10.1063/1.5112173
Published: August 2019
View articletitled, Absorption in ultrathin GaN-based membranes: The role of standing wave effects
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Includes: Supplementary data
Journal Articles

Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

L. Mancini, F. Moyon, J. Houard, I. Blum, W. Lefebvre, F. Vurpillot, A. Das, E. Monroy, L. Rigutti
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 243102 (2017)
https://doi.org/10.1063/1.5004417
Published: December 2017
View articletitled, Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip
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Includes: Supplementary data
Journal Articles

Gallium kinetics on m-plane GaN

C. B. Lim, A. Ajay, E. Monroy
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 022101 (2017)
https://doi.org/10.1063/1.4993570
Published: July 2017
View articletitled, Gallium kinetics on m-plane GaN
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Journal Articles

Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, R. Colombelli
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 131102 (2017)
https://doi.org/10.1063/1.4979084
Published: March 2017
View articletitled, Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system
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Journal Articles

High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis

A. Kaminska, D. Jankowski, P. Strak, K. P. Korona, M. Beeler, K. Sakowski, E. Grzanka, J. Borysiuk, K. Sobczak, E. Monroy, S. Krukowski
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 095705 (2016)
https://doi.org/10.1063/1.4962282
Published: September 2016
View articletitled, High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
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Journal Articles

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

S. Joglekar, M. Azize, M. Beeler, E. Monroy, T. Palacios
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 041602 (2016)
https://doi.org/10.1063/1.4959831
Published: July 2016
View articletitled, Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors
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Journal Articles

Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study

A. Kaminska, P. Strak, J. Borysiuk, K. Sobczak, J. Z. Domagala, M. Beeler, E. Grzanka, K. Sakowski, S. Krukowski, E. Monroy
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 015703 (2016)
https://doi.org/10.1063/1.4939595
Published: January 2016
View articletitled, Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study
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Journal Articles

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, E. Monroy
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 014309 (2015)
https://doi.org/10.1063/1.4926423
Published: July 2015
View articletitled, Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions
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Journal Articles

Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

C. Himwas, M. den Hertog, Le Si Dang, E. Monroy, R. Songmuang
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 241908 (2014)
https://doi.org/10.1063/1.4904989
Published: December 2014
View articletitled, Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission
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Journal Articles

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M.-P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves, E. Monroy
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 233504 (2014)
https://doi.org/10.1063/1.4903944
Published: December 2014
View articletitled, High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
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Journal Articles

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

M. Beeler, C. Bougerol, E. Bellet-Amalric, E. Monroy
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 131106 (2014)
https://doi.org/10.1063/1.4896768
Published: September 2014
View articletitled, Pseudo-square AlGaN/GaN quantum wells for terahertz absorption
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Journal Articles

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, E. Monroy
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 131105 (2014)
https://doi.org/10.1063/1.4896679
Published: September 2014
View articletitled, Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
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Journal Articles

Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

C. Himwas, M. den Hertog, E. Bellet-Amalric, R. Songmuang, F. Donatini, Le Si Dang, E. Monroy
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 023502 (2014)
https://doi.org/10.1063/1.4887140
Published: July 2014
View articletitled, Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
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Journal Articles

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

M. Beeler, C. Bougerol, E. Bellet-Amalric, E. Monroy
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 091108 (2013)
https://doi.org/10.1063/1.4819950
Published: August 2013
View articletitled, Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design
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Journal Articles

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy, M. Eickhoff
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 074313 (2013)
https://doi.org/10.1063/1.4818624
Published: August 2013
View articletitled, InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface
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Journal Articles

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

F. González-Posada, R. Songmuang, M. Den Hertog, E. Monroy
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 213113 (2013)
https://doi.org/10.1063/1.4808017
Published: May 2013
View articletitled, Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
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Journal Articles

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M. P. Chauvat, P. Ruterana, G. Nataf, Ph. De Mierry, E. Monroy, F. H. Julien
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 143109 (2013)
https://doi.org/10.1063/1.4801528
Published: April 2013
View articletitled, Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
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Journal Articles

All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

K. S. Daskalakis, P. S. Eldridge, G. Christmann, E. Trichas, R. Murray, E. Iliopoulos, E. Monroy, N. T. Pelekanos, J. J. Baumberg, P. G. Savvidis
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 101113 (2013)
https://doi.org/10.1063/1.4795019
Published: March 2013
View articletitled, All-dielectric GaN microcavity: Strong coupling and lasing at room temperature
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Journal Articles

GaN/AlGaN waveguide quantum cascade photodetectors at λ  ≈  1.55 μm with enhanced responsivity and ∼ 40 GHz frequency bandwidth

S. Sakr, P. Crozat, D. Gacemi, Y. Kotsar, A. Pesach, P. Quach, N. Isac, M. Tchernycheva, L. Vivien, G. Bahir, E. Monroy, F. H. Julien
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 011135 (2013)
https://doi.org/10.1063/1.4775374
Published: January 2013
View articletitled, GaN/AlGaN waveguide quantum cascade photodetectors at λ  ≈  1.55 μm with enhanced responsivity and ∼ 40 GHz frequency bandwidth
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