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E. M. Vogel
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Journal Articles

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

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R. V. Galatage, D. M. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 014504 (2014)
https://doi.org/10.1063/1.4886715
Published: July 2014
View articletitled, Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
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Journal Articles

Cleaning graphene with a titanium sacrificial layer

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C. A. Joiner, T. Roy, Z. R. Hesabi, B. Chakrabarti, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 223109 (2014)
https://doi.org/10.1063/1.4881886
Published: June 2014
View articletitled, Cleaning graphene with a titanium sacrificial layer
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Journal Articles

Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

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T. Roy, L. Liu, S. de la Barrera, B. Chakrabarti, Z. R. Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 123506 (2014)
https://doi.org/10.1063/1.4870073
Published: March 2014
View articletitled, Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions
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Journal Articles

Chemical and electrical characterization of the HfO2/InAlAs interface

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B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, R. M. Wallace
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 104103 (2013)
https://doi.org/10.1063/1.4821021
Published: September 2013
View articletitled, Chemical and electrical characterization of the HfO2/InAlAs interface
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Journal Articles

Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

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R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 132903 (2013)
https://doi.org/10.1063/1.4799660
Published: April 2013
View articletitled, Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
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Journal Articles

PtSi dominated Schottky barrier heights of Ni(Pt)Si contacts due to Pt segregation

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J. Chan, M. Balakchiev, A. M. Thron, R. A. Chapman, D. Riley, S. C. Song, A. Jain, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 123507 (2013)
https://doi.org/10.1063/1.4799277
Published: March 2013
View articletitled, PtSi dominated Schottky barrier heights of Ni(Pt)Si contacts due to Pt segregation
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Journal Articles

Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layer-deposited Al2O3 protective layer

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W. Peng, O. Seitz, R. A. Chapman, E. M. Vogel, Y. J. Chabal
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 051605 (2012)
https://doi.org/10.1063/1.4742168
Published: July 2012
View articletitled, Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layer-deposited Al2O3 protective layer
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Journal Articles

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

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C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 153501 (2012)
https://doi.org/10.1063/1.3701165
Published: April 2012
View articletitled, Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
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Journal Articles

Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

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R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 172901 (2011)
https://doi.org/10.1063/1.3656001
Published: October 2011
View articletitled, Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
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Journal Articles

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

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A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 122108 (2011)
https://doi.org/10.1063/1.3643444
Published: September 2011
View articletitled, The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
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Journal Articles

Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

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J. Chan, N. Y. Martinez, J. J. D. Fitzgerald, A. V. Walker, R. A. Chapman, D. Riley, A. Jain, C. L. Hinkle, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 012114 (2011)
https://doi.org/10.1063/1.3609874
Published: July 2011
View articletitled, Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering
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Journal Articles

On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

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A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 193501 (2011)
https://doi.org/10.1063/1.3588255
Published: May 2011
View articletitled, On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors
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Journal Articles

Characteristics of high-k Al 2 O 3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

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B. Lee, G. Mordi, M. J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, K. J. Cho, L. Colombo, J. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 043107 (2010)
https://doi.org/10.1063/1.3467454
Published: July 2010
View articletitled, Characteristics of high-k Al 2 O 3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
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Journal Articles

Effect of mobile ions on ultrathin silicon-on-insulator-based sensors

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P. G. Fernandes, O. Seitz, R. A. Chapman, H. J. Stiegler, H. -C. Wen, Y. J. Chabal, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 034103 (2010)
https://doi.org/10.1063/1.3463453
Published: July 2010
View articletitled, Effect of mobile ions on ultrathin silicon-on-insulator-based sensors
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Journal Articles

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN / HfO 2 gate stacks

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C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 103502 (2010)
https://doi.org/10.1063/1.3353993
Published: March 2010
View articletitled, Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN / HfO 2 gate stacks
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Journal Articles

Contact resistance in few and multilayer graphene devices

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A. Venugopal, L. Colombo, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 013512 (2010)
https://doi.org/10.1063/1.3290248
Published: January 2010
View articletitled, Contact resistance in few and multilayer graphene devices
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Journal Articles

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

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C. L. Hinkle, M. Milojevic, E. M. Vogel, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 151905 (2009)
https://doi.org/10.1063/1.3249577
Published: October 2009
View articletitled, The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding
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Journal Articles

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

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C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 162101 (2009)
https://doi.org/10.1063/1.3120546
Published: April 2009
View articletitled, Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
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Journal Articles

Half-cycle atomic layer deposition reaction studies of Al 2 O 3 on ( N H 4 ) 2 S passivated GaAs(100) surfaces

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M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 252905 (2008)
https://doi.org/10.1063/1.3054348
Published: December 2008
View articletitled, Half-cycle atomic layer deposition reaction studies of Al 2 O 3 on ( N H 4 ) 2 S passivated GaAs(100) surfaces
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Journal Articles

Half-cycle atomic layer deposition reaction studies of Al 2 O 3 on In 0.2 Ga 0.8 As (100) surfaces

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M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 202902 (2008)
https://doi.org/10.1063/1.3033404
Published: November 2008
View articletitled, Half-cycle atomic layer deposition reaction studies of Al 2 O 3 on In 0.2 Ga 0.8 As (100) surfaces
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