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E. Kuokstis
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Journal Articles

Carrier Localization and Decay in Wide‐band‐gap AlGaN/AlGaN Quantum Wells

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G. Tamulaitis, J. Mickevičius, K. Kazlauskas, A. Žukauskas, E. Kuokštis, M. S. Shur, J. Yang, R. Gaska
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 114–115 (2010)
https://doi.org/10.1063/1.3295322
Published: January 2010
View articletitled, Carrier Localization and Decay in Wide‐band‐gap AlGaN/AlGaN Quantum Wells
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Journal Articles

Screening dynamics of intrinsic electric field in AlGaN quantum wells

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A. Pinos, S. Marcinkevičius, K. Liu, M. S. Shur, E. Kuokštis, G. Tamulaitis, R. Gaska, J. Yang, W. Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 061907 (2008)
https://doi.org/10.1063/1.2857467
Published: February 2008
View articletitled, Screening dynamics of intrinsic electric field in AlGaN quantum wells
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Journal Articles

Photoluminescence dynamics in highly nonhomogeneously excited GaN

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E. Kuokstis, G. Tamulaitis, K. Liu, M. S. Shur, J. W. Li, J. W. Yang, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 161920 (2007)
https://doi.org/10.1063/1.2721121
Published: April 2007
View articletitled, Photoluminescence dynamics in highly nonhomogeneously excited GaN
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Journal Articles

Well-width-dependent carrier lifetime in Al Ga N ∕ Al Ga N quantum wells

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J. Mickevičius, G. Tamulaitis, E. Kuokštis, K. Liu, M. S. Shur, J. P. Zhang, R. Gaska
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 131907 (2007)
https://doi.org/10.1063/1.2717145
Published: March 2007
View articletitled, Well-width-dependent carrier lifetime in Al Ga N ∕ Al Ga N quantum wells
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Journal Articles

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

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E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 261905 (2006)
https://doi.org/10.1063/1.2218275
Published: June 2006
View articletitled, Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers
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Journal Articles

Internal polarization fields in GaN ∕ AlGaN multiple quantum wells with different crystallographic orientations

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E. Kuokstis, W. H. Sun, C. Q. Chen, J. W. Yang, M. Asif Khan
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 103719 (2005)
https://doi.org/10.1063/1.1900287
Published: May 2005
View articletitled, Internal polarization fields in GaN ∕ AlGaN multiple quantum wells with different crystallographic orientations
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Journal Articles

Excitation power dynamics of photoluminescence in In Ga N ∕ Ga N quantum wells with enhanced carrier localization

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K. Kazlauskas, G. Tamulaitis, J. Mickevičius, E. Kuokštis, A. Žukauskas, Yung-Chen Cheng, Hsiang-Cheng Wang, Chi-Feng Huang, C. C. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 013525 (2005)
https://doi.org/10.1063/1.1826220
Published: December 2004
View articletitled, Excitation power dynamics of photoluminescence in In Ga N ∕ Ga N quantum wells with enhanced carrier localization
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Journal Articles

Increase of free carrier lifetime in nonpolar a -plane GaN grown by epitaxial lateral overgrowth

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S. Juršènas, E. Kuokštis, S. Miasojedovas, G. Kurilčik, A. Žukauskas, C. Q. Chen, J. W. Yang, V. Adivarahan, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 771–773 (2004)
https://doi.org/10.1063/1.1777409
Published: August 2004
View articletitled, Increase of free carrier lifetime in nonpolar a -plane GaN grown by epitaxial lateral overgrowth
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Journal Articles

Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

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E. Kuokstis, C. Q. Chen, J. W. Yang, M. Shatalov, M. E. Gaevski, V. Adivarahan, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 2998–3000 (2004)
https://doi.org/10.1063/1.1711169
Published: April 2004
View articletitled, Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics
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Journal Articles

Air-bridged lateral growth of crack-free Al 0.24 Ga 0.76 N on highly relaxed porous GaN

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R. S. Qhalid Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. Asif Khan, J. Caissie, R. J. Molnar
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 696–698 (2004)
https://doi.org/10.1063/1.1644621
Published: February 2004
View articletitled, Air-bridged lateral growth of crack-free Al 0.24 Ga 0.76 N on highly relaxed porous GaN
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Journal Articles

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

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G. Tamulaitis, I. Yilmaz, M. S. Shur, R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, S. B. Schujman, L. J. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 3507–3509 (2003)
https://doi.org/10.1063/1.1623322
Published: October 2003
View articletitled, Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities
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Journal Articles

GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

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W. H. Sun, J. W. Yang, C. Q. Chen, J. P. Zhang, M. E. Gaevski, E. Kuokstis, V. Adivarahan, H. M. Wang, Z. Gong, M. Su, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 2599–2601 (2003)
https://doi.org/10.1063/1.1614835
Published: September 2003
View articletitled, GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
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Journal Articles

Exciton and carrier motion in quaternary AlInGaN

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K. Kazlauskas, G. Tamulaitis, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, E. Kuokstis, G. Simin, M. S. Shur, R. Gaska
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4501–4503 (2003)
https://doi.org/10.1063/1.1586782
Published: June 2003
View articletitled, Exciton and carrier motion in quaternary AlInGaN
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Journal Articles

Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81 , 2755 (2002)]

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E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. Shur, J. C. Rojo, L. J. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 1488 (2003)
https://doi.org/10.1063/1.1555280
Published: March 2003
View articletitled, Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81 , 2755 (2002)]
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Journal Articles

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

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R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, G. Tamulaitis, I. Yilmaz, M. S. Shur, J. C. Rojo, L. J. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4658–4660 (2002)
https://doi.org/10.1063/1.1524034
Published: December 2002
View articletitled, Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
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Journal Articles

Pulsed atomic-layer epitaxy of ultrahigh-quality Al x Ga 1−x N structures for deep ultraviolet emissions below 230 nm

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J. P. Zhang, M. Asif Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis, J. W. Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4392–4394 (2002)
https://doi.org/10.1063/1.1528726
Published: December 2002
View articletitled, Pulsed atomic-layer epitaxy of ultrahigh-quality Al x Ga 1−x N structures for deep ultraviolet emissions below 230 nm
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Journal Articles

Polarization effects in photoluminescence of C - and M -plane GaN/AlGaN multiple quantum wells

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E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4130–4132 (2002)
https://doi.org/10.1063/1.1524298
Published: November 2002
View articletitled, Polarization effects in photoluminescence of C - and M -plane GaN/AlGaN multiple quantum wells
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Journal Articles

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

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C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3194–3196 (2002)
https://doi.org/10.1063/1.1516230
Published: October 2002
View articletitled, GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates
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Journal Articles

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

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A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 2938–2940 (2002)
https://doi.org/10.1063/1.1516631
Published: October 2002
View articletitled, Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm
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Journal Articles

Near-band-edge photoluminescence of wurtzite-type AlN

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E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 2755–2757 (2002)
https://doi.org/10.1063/1.1510586
Published: October 2002
View articletitled, Near-band-edge photoluminescence of wurtzite-type AlN
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