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Journal Articles

Effect of different buffer layers on the quality of InGaN layers grown on Si

V. J. Gómez, J. Grandal, A. Núñez-Cascajero, F. B. Naranjo, M. Varela, M. A. Sánchez-García, E. Calleja
Journal: AIP Advances
AIP Advances 8, 105026 (2018)
https://doi.org/10.1063/1.5046756
Published: October 2018
View articletitled, Effect of different buffer layers on the quality of InGaN layers grown on Si
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Journal Articles

Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

P. Aseev, Ž. Gačević, A. Torres-Pardo, J. M. González-Calbet, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 253109 (2016)
https://doi.org/10.1063/1.4954742
Published: June 2016
View articletitled, Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
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Journal Articles

A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control

Ž. Gačević, D. López-Romero, T. Juan Mangas, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 033101 (2016)
https://doi.org/10.1063/1.4940197
Published: January 2016
View articletitled, A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control
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Journal Articles

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

S. Lazić, E. Chernysheva, Ž. Gačević, H. P. van der Meulen, E. Calleja, J. M. Calleja Pardo
Journal: AIP Advances
AIP Advances 5, 097217 (2015)
https://doi.org/10.1063/1.4932147
Published: September 2015
View articletitled, Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
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Journal Articles

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates

M. Niehle, A. Trampert, S. Albert, A. Bengoechea-Encabo, E. Calleja
Journal: APL Materials
APL Mater. 3, 036102 (2015)
https://doi.org/10.1063/1.4914102
Published: March 2015
View articletitled, Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates
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Journal Articles

Crystallographically uniform arrays of ordered (In)GaN nanocolumns

Ž. Gačević, A. Bengoechea-Encabo, S. Albert, A. Torres-Pardo, J. M. González-Calbet, E. Calleja
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 035301 (2015)
https://doi.org/10.1063/1.4905951
Published: January 2015
View articletitled, Crystallographically uniform arrays of ordered (In)GaN nanocolumns
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Journal Articles

Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates

S. Albert, A. Bengoechea-Encabo, J. Zuniga-Perez, P. de Mierry, P. Val, M. A. Sanchez-Garcia, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 091902 (2014)
https://doi.org/10.1063/1.4894802
Published: September 2014
View articletitled, Selective area growth of GaN nanostructures: A key to produce high quality (11–20) a-plane pseudo-substrates
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Journal Articles

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Ž. Gačević, G. Rossbach, R. Butté, F. Réveret, M. Glauser, J. Levrat, G. Cosendey, J.-F. Carlin, N. Grandjean, E. Calleja
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 233102 (2013)
https://doi.org/10.1063/1.4846218
Published: December 2013
View articletitled, Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
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Journal Articles

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sanchez-Garcia, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 241905 (2013)
https://doi.org/10.1063/1.4846455
Published: December 2013
View articletitled, Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates
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Journal Articles

Erratum: “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” [Appl. Phys. Lett. 102, 181103 (2013)]

S. Albert, A. Bengoechea-Encabo, X. Kong, M. A. Sanchez-Garcia, E. Calleja, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 219901 (2013)
https://doi.org/10.1063/1.4808016
Published: May 2013
View articletitled, Erratum: “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” [Appl. Phys. Lett. 102, 181103 (2013)]
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Journal Articles

Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces

Ž. Gačević, A. Eljarrat, F. Peiró, E. Calleja
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 183106 (2013)
https://doi.org/10.1063/1.4805054
Published: May 2013
View articletitled, Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
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Journal Articles

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

S. Albert, A. Bengoechea-Encabo, X. Kong, M. A. Sanchez-Garcia, E. Calleja, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 181103 (2013)
https://doi.org/10.1063/1.4804293
Published: May 2013
View articletitled, Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
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Journal Articles

Spontaneous formation of InGaN nanowall network directly on Si

P. E. D. Soto Rodriguez, Praveen Kumar, V. J. Gómez, N. H. Alvi, J. M. Mánuel, F. M. Morales, J. J. Jiménez, R. García, E. Calleja, R. Nötzel
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 173105 (2013)
https://doi.org/10.1063/1.4803017
Published: April 2013
View articletitled, Spontaneous formation of InGaN nanowall network directly on Si
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Journal Articles

Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

S. Albert, A. Bengoechea-Encabo, M. A. Sanchez-Garcia, E. Calleja, U. Jahn
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 114306 (2013)
https://doi.org/10.1063/1.4796100
Published: March 2013
View articletitled, Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
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Journal Articles

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

S. Albert, A. Bengoechea-Encabo, P. Lefebvre, F. Barbagini, M. A. Sanchez-Garcia, E. Calleja, U. Jahn, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 231906 (2012)
https://doi.org/10.1063/1.4728115
Published: June 2012
View articletitled, Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
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Journal Articles

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

S. Albert, A. Bengoechea-Encabo, P. Lefebvre, M. A. Sanchez-Garcia, E. Calleja, U. Jahn, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 131108 (2011)
https://doi.org/10.1063/1.3644986
Published: September 2011
View articletitled, Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
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Journal Articles

Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

D. R. Khanal, A. X. Levander, K. M. Yu, Z. Liliental-Weber, W. Walukiewicz, J. Grandal, M. A. Sánchez-García, E. Calleja, J. Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 033705 (2011)
https://doi.org/10.1063/1.3611032
Published: August 2011
View articletitled, Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
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Journal Articles

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

Ž. Gačević, S. Fernández-Garrido, J. M. Rebled, S. Estradé, F. Peiró, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 031103 (2011)
https://doi.org/10.1063/1.3614434
Published: July 2011
View articletitled, High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
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Journal Articles

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

P. Lefebvre, S. Fernández-Garrido, J. Grandal, J. Ristić, M.-A. Sánchez-García, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 083104 (2011)
https://doi.org/10.1063/1.3556643
Published: February 2011
View articletitled, Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
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Journal Articles

InN/InGaN multiple quantum wells emitting at 1.5   μ m grown by molecular beam epitaxy

J. Grandal, J. Pereiro, A. Bengoechea-Encabo, S. Fernández-Garrido, M. A. Sánchez-García, E. Muñoz, E. Calleja, E. Luna, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 061901 (2011)
https://doi.org/10.1063/1.3552195
Published: February 2011
View articletitled, InN/InGaN multiple quantum wells emitting at 1.5   μ m grown by molecular beam epitaxy
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