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Duc V. Dinh
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Journal Articles

Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Frank Peiris, Jonas Lähnemann, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112102 (2023)
https://doi.org/10.1063/5.0164058
Published: September 2023
View article titled, Optical properties of ScN layers grown on Al<sub>2</sub>O<sub>3</sub>(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152103 (2023)
https://doi.org/10.1063/5.0137873
Published: April 2023
View article titled, Lattice parameters of Sc<sub><em>x</em></sub>Al<sub>1−<em>x</em></sub>N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes

Stefan Freytag, Michael Winkler, Rüdiger Goldhahn, Tim Wernicke, Monir Rychetsky, Ingrid L. Koslow, Michael Kneissl, Duc V. Dinh, Brian Corbett, Peter J. Parbrook, Martin Feneberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 062106 (2020)
https://doi.org/10.1063/1.5134952
Published: February 2020
View article titled, Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes
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Journal Articles

Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes

Duc V. Dinh, Brian Corbett, Peter J. Parbrook, Ingrid. L. Koslow, Monir Rychetsky, Martin Guttmann, Tim Wernicke, Michael Kneissl, Christian Mounir, Ulrich Schwarz, Johannes Glaab, Carsten Netzel, Frank Brunner, Markus Weyers
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 135701 (2016)
https://doi.org/10.1063/1.4963757
Published: October 2016
View article titled, Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes
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Journal Articles

Exciton localization in semipolar ( 11 2 ¯ 2 ) InGaN multiple quantum wells

Duc V. Dinh, F. Brunner, M. Weyers, B. Corbett, P. J. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 055705 (2016)
https://doi.org/10.1063/1.4960348
Published: August 2016
View article titled, Exciton localization in semipolar ( 11 2 ¯ 2 ) InGaN multiple quantum wells
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Journal Articles

Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy

Duc V. Dinh, F. Oehler, V. Z. Zubialevich, M. J. Kappers, S. N. Alam, M. Caliebe, F. Scholtz, C. J. Humphreys, P. J. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 153505 (2014)
https://doi.org/10.1063/1.4898569
Published: October 2014
View article titled, Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy
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Journal Articles

Growth and characterizations of semipolar ( 11 2 ¯ 2 ) InN

Duc V. Dinh, D. Skuridina, S. Solopow, M. Frentrup, M. Pristovsek, P. Vogt, M. Kneissl, F. Ivaldi, S. Kret, A. Szczepańska
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 013530 (2012)
https://doi.org/10.1063/1.4733997
Published: July 2012
View article titled, Growth and characterizations of semipolar ( 11 2 ¯ 2 ) InN
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Journal Articles

Surface diffusion and layer morphology of ( ( 11 2 ¯ 2 ) ) GaN grown by metal-organic vapor phase epitaxy

Simon Ploch, Tim Wernicke, Duc V. Dinh, Markus Pristovsek, Michael Kneissl
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 033526 (2012)
https://doi.org/10.1063/1.3682513
Published: February 2012
View article titled, Surface diffusion and layer morphology of ( ( 11 2 ¯ 2 ) ) GaN grown by metal-organic vapor phase epitaxy
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