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Journal Articles

Strain-induced exciton localized states in quantum well

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Jian Wang, Junhui Huang, Yuanhe Li, Kun Ding, Desheng Jiang, Xiuming Dou, Baoquan Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 012104 (2023)
https://doi.org/10.1063/5.0130104
Published: January 2023
View articletitled, Strain-induced exciton localized states in quantum well
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Journal Articles

Inhibited exciton spontaneous emission in InGaAs/GaAs quantum well by the phase-related scattering field of gold nanoparticles

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Jian Wang, Junhui Huang, Yuanhe Li, Kun Ding, Desheng Jiang, Xiuming Dou, Baoquan Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 242102 (2022)
https://doi.org/10.1063/5.0088137
Published: June 2022
View articletitled, Inhibited exciton spontaneous emission in InGaAs/GaAs quantum well by the phase-related scattering field of gold nanoparticles
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Journal Articles

Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots

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Hao Chen, Zhiyao Zhuo, Junhui Huang, Xiuming Dou, Xiaowu He, Kun Ding, Haiqiao Ni, Zhichuan Niu, Desheng Jiang, Baoquan Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 082101 (2020)
https://doi.org/10.1063/1.5142482
Published: February 2020
View articletitled, Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots
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Journal Articles

1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K

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Yongzhou Xue, Zesheng Chen, Haiqiao Ni, Zhichuan Niu, Desheng Jiang, Xiuming Dou, Baoquan Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 182102 (2017)
https://doi.org/10.1063/1.5010049
Published: November 2017
View articletitled, 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K
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Journal Articles

Comparative study of the differential resistance of GaAs- and GaN-based laser diodes

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Xiang Li, Zongshun Liu, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Jing Yang, Lingcong Le, Wei Liu, Xiaoguang He, Xiaojing Li, Feng Liang, Liqun Zhang, Jianping Liu, Hui Yang, Yuantao Zhang, Guotong Du
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041211 (2016)
https://doi.org/10.1116/1.4950746
Published: May 2016
View articletitled, Comparative study of the differential resistance of GaAs- and GaN-based laser diodes
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Journal Articles

Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

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Dan Su, Xiuming Dou, Xuefei Wu, Yongping Liao, Pengyu Zhou, Kun Ding, Haiqiao Ni, Zhichuan Niu, Haijun Zhu, Desheng Jiang, Baoquan Sun
Journal: AIP Advances
AIP Advances 6, 045204 (2016)
https://doi.org/10.1063/1.4946850
Published: April 2016
View articletitled, Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress
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Journal Articles

Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

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Xiaojing Li, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Lingcong Le, Jing Yang, Xiaoguang He, Liqun Zhang, Shuming Zhang, Jianping Liu, Hui Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011204 (2016)
https://doi.org/10.1116/1.4936882
Published: December 2015
View articletitled, Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors
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Journal Articles

Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode

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Feng Liang, Ping Chen, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Jing Yang, Lingcong Le, Wei Liu, Xiaoguang He, Xiaojing Li, Xiang Li, Liqun Zhang, Jianping Liu, Hui Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 012201 (2016)
https://doi.org/10.1116/1.4936383
Published: November 2015
View articletitled, Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode
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Journal Articles

Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes

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Lingcong Le, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Jing Yang, Xiaojing Li, Xiaoguang He, Jianping Liu, Shuming Zhang, Hui Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 011209 (2015)
https://doi.org/10.1116/1.4905430
Published: January 2015
View articletitled, Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes
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Journal Articles

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

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Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Lingcong Le, Xiaoguang He, Xiaojing Li, Y. T. Zhang, G. T. Du
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 021505 (2015)
https://doi.org/10.1116/1.4904035
Published: December 2014
View articletitled, Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films
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Journal Articles

Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition

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Xiaoguang He, Degang Zhao, Desheng Jiang, Jianjun Zhu, Ping Chen, Zongshun Liu, Lingcong Le, Jing Yang, Xiaojing Li, Shuming Zhang, Hui Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 051207 (2014)
https://doi.org/10.1116/1.4892786
Published: August 2014
View articletitled, Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition
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Journal Articles

Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

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Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Lingcong Le, Xiaoguang He, Xiaojing Li, Hui Wang, Hui Yang, Uwe Jahn
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 051503 (2014)
https://doi.org/10.1116/1.4889857
Published: July 2014
View articletitled, Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells
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Journal Articles

Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

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Xiaojing Li, Degang Zhao, Desheng Jiang, Zongshun Liu, Ping Chen, Lingcong Le, Jing Yang, Xiaoguang He, Shuming Zhang, Jianjun Zhu, Hui Wang, Baoshun Zhang, Jianping Liu, Hui Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 031204 (2014)
https://doi.org/10.1116/1.4871460
Published: April 2014
View articletitled, Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors
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Journal Articles

In situ tuning the single photon emission from single quantum dots through hydrostatic pressure

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Xuefei Wu, Xiuming Dou, Kun Ding, Pengyu Zhou, Haiqiao Ni, Zhichuan Niu, Desheng Jiang, Baoquan Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 252108 (2013)
https://doi.org/10.1063/1.4856755
Published: December 2013
View articletitled, In situ tuning the single photon emission from single quantum dots through hydrostatic pressure
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Journal Articles

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

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Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 152109 (2013)
https://doi.org/10.1063/1.4824850
Published: October 2013
View articletitled, Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth
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Journal Articles

Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars

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Jihong Zhu, Liangji Wang, Shuming Zhang, Hui Wang, Degang Zhao, Jianjun Zhu, Zongshun Liu, Desheng Jiang, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 084339 (2011)
https://doi.org/10.1063/1.3580477
Published: April 2011
View articletitled, Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
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Journal Articles

The fabrication of GaN-based nanopillar light-emitting diodes

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Jihong Zhu, Liangji Wang, Shuming Zhang, Hui Wang, Degang Zhao, Jianjun Zhu, Zongshun Liu, Desheng Jiang, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 074302 (2010)
https://doi.org/10.1063/1.3488905
Published: October 2010
View articletitled, The fabrication of GaN-based nanopillar light-emitting diodes
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Journal Articles

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

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Kanglin Xiong, Wei He, Shulong Lu, Taofei Zhou, Desheng Jiang, Rongxin Wang, Kai Qiu, Jianrong Dong, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 124501 (2010)
https://doi.org/10.1063/1.3431390
Published: June 2010
View articletitled, Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence
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Journal Articles

Effective recombination velocity of textured surfaces

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Kanglin Xiong, Shulong Lu, Desheng Jiang, Jianrong Dong, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 193107 (2010)
https://doi.org/10.1063/1.3396078
Published: May 2010
View articletitled, Effective recombination velocity of textured surfaces
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Journal Articles

Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

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Xian Sun, Desheng Jiang, Wenbao Liu, Jihong Zhu, Hui Wang, Zongshun Liu, Jianjun Zhu, Yutian Wang, Degang Zhao, Shuming Zhang, Liping You, Renmin Ma, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 026102 (2009)
https://doi.org/10.1063/1.3177347
Published: July 2009
View articletitled, Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
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