1-20 of 140
Deren Yang
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Modification on electrical characteristics of interface states by using nitrogen and phosphorus co-doped polysilicon in tunnel oxide passivation contact silicon solar cells

Lei Yang, Zechen Hu, Zunke Liu, Xiang Lv, Xiaodong Zhu, Yuheng Zeng, Xuegong Yu, Deren Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 243502 (2024)
https://doi.org/10.1063/5.0221697
Published: December 2024
View article titled, Modification on electrical characteristics of interface states by using nitrogen and phosphorus co-doped polysilicon in tunnel oxide passivation contact silicon solar cells
Open the PDF for Modification on electrical characteristics of interface states by using nitrogen and phosphorus co-doped polysilicon in tunnel oxide passivation contact silicon solar cells in another window
Journal Articles

Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect

Yunfeng Wu, Houwei Pang, Yuan Wang, Sichen Lin, Lei Wang, Deren Yang, Dongsheng Li
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 133102 (2024)
https://doi.org/10.1063/5.0223340
Published: October 2024
View article titled, Low driving voltage and high reliability 1.54 <em>μ</em>m electroluminescence from SnO<sub>2</sub>:Er/<em>p</em>-Si heterostructured devices via energy transfer effect
Open the PDF for Low driving voltage and high reliability 1.54 <em>μ</em>m electroluminescence from SnO<sub>2</sub>:Er/<em>p</em>-Si heterostructured devices via energy transfer effect in another window
Journal Articles

Oxygen-close-packed (310)-plane substrates of β-Ga2O3 grown by the casting method

Yuchao Yan, Xu Gao, Da Liu, Huifan Xiong, Yingying Liu, Keke Ma, Dan Wu, Jiabin Wang, Yan Wang, Ning Xia, Tianqi Deng, Zhu Jin, Hui Zhang, Deren Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102101 (2024)
https://doi.org/10.1063/5.0222214
Published: September 2024
View article titled, Oxygen-close-packed (310)-plane substrates of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> grown by the casting method
Open the PDF for Oxygen-close-packed (310)-plane substrates of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> grown by the casting method in another window
Journal Articles

The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC

Yanwei Yang, Keqiang Li, Zhouyu Tong, Xiaodong Pi, Deren Yang, Yuanchao Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045706 (2024)
https://doi.org/10.1063/5.0212043
Published: July 2024
View article titled, The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC
Open the PDF for The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC in another window
Journal Articles

Separated striations in n-type Czochralski silicon solar cells

Guixiu Li, Shuai Yuan, Shenglang Zhou, Yihua Wu, Hongrong Chen, Huali Zhang, Chen Wang, Lei Wang, Xuegong Yu, Deren Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 252103 (2024)
https://doi.org/10.1063/5.0204270
Published: June 2024
View article titled, Separated striations in n-type Czochralski silicon solar cells
Open the PDF for Separated striations in n-type Czochralski silicon solar cells in another window
Journal Articles

Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer

Shenzhong Li, Tong Zhao, Defan Wu, Xingbo Liang, Hao Chen, Qunlin Nie, Daxi Tian, Xiangyang Ma, Deren Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235704 (2024)
https://doi.org/10.1063/5.0202400
Published: June 2024
View article titled, Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within <em>n</em>/<em>n<sup>+</sup></em> epitaxial wafer
Open the PDF for Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within <em>n</em>/<em>n<sup>+</sup></em> epitaxial wafer in another window
Journal Articles

Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels

Yuanchao Huang, Rong Wang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 195703 (2024)
https://doi.org/10.1063/5.0190242
Published: May 2024
View article titled, Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels
Open the PDF for Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels in another window
Journal Articles

Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics

Yuanchao Huang, Xuanyu Jiang, Tianqi Deng, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 135701 (2024)
https://doi.org/10.1063/5.0195321
Published: April 2024
View article titled, Identifying the charge states of carbon vacancies in 4H-SiC by <em>ab initio</em> metadynamics
Open the PDF for Identifying the charge states of carbon vacancies in 4H-SiC by <em>ab initio</em> metadynamics in another window
Journal Articles

Anisotropic thermal expansion tensor of β -Ga2O3 and its critical role in casting-grown crystal cracking

Yuchao Yan, Dan Wu, Ning Xia, Tianqi Deng, Hui Zhang, Deren Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 122102 (2024)
https://doi.org/10.1063/5.0195733
Published: March 2024
View article titled, Anisotropic thermal expansion tensor of <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> and its critical role in casting-grown crystal cracking
Open the PDF for Anisotropic thermal expansion tensor of <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> and its critical role in casting-grown crystal cracking in another window
Includes: Supplementary data
Journal Articles

Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon

Defan Wu, Tong Zhao, Bin Ye, Hao Chen, Xingbo Liang, Shenzhong Li, Daxi Tian, Deren Yang, Xiangyang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 155701 (2023)
https://doi.org/10.1063/5.0161897
Published: October 2023
View article titled, Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon
Open the PDF for Comprehensive understanding on phosphorus precipitation in heavily phosphorus-doped Czochralski silicon in another window
Journal Articles

Flexible optoelectronic synaptic transistors for neuromorphic visual systems

Xiao Liu, Dongke Li, Yue Wang, Deren Yang, Xiaodong Pi
Journal: APL Machine Learning
APL Mach. Learn. 1, 031501 (2023)
https://doi.org/10.1063/5.0163926
Published: August 2023
View article titled, Flexible optoelectronic synaptic transistors for neuromorphic visual systems
Open the PDF for Flexible optoelectronic synaptic transistors for neuromorphic visual systems in another window
Journal Articles

Impurities and defects in 4H silicon carbide

Featured
Rong Wang, Yuanchao Huang, Deren Yang, Xiaodong Pi
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 180501 (2023)
https://doi.org/10.1063/5.0145350
Published: May 2023
View article titled, Impurities and defects in 4H silicon carbide
Open the PDF for Impurities and defects in 4H silicon carbide in another window
Journal Articles

Crack healing behavior of 4H-SiC: Effect of dopants

Xiaoshuang Liu, Yazhe Wang, Xi Zhang, Yunhao Lu, Rong Wang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 145704 (2023)
https://doi.org/10.1063/5.0140922
Published: April 2023
View article titled, Crack healing behavior of 4H-SiC: Effect of dopants
Open the PDF for Crack healing behavior of 4H-SiC: Effect of dopants in another window
Includes: Supplementary data
Journal Articles

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Yuanchao Huang, Rong Wang, Naifu Zhang, Yiqiang Zhang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 155704 (2022)
https://doi.org/10.1063/5.0108726
Published: October 2022
View article titled, Effect of hydrogen on the unintentional doping of 4H silicon carbide
Open the PDF for Effect of hydrogen on the unintentional doping of 4H silicon carbide in another window
Journal Articles

The influence of A-site dipole moment on iodine migration in perovskite films revealed by transient ion drift

Biao Li, Xuehui Xu, Yuxin Yao, Pengjie Hang, Chenxia Kan, Ying Wang, Yiqiang Zhang, Yang (Michael) Yang, Deren Yang, Xuegong Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 073904 (2022)
https://doi.org/10.1063/5.0100180
Published: August 2022
View article titled, The influence of A-site dipole moment on iodine migration in perovskite films revealed by transient ion drift
Open the PDF for The influence of A-site dipole moment on iodine migration in perovskite films revealed by transient ion drift in another window
Includes: Supplementary data
Journal Articles

Kick-out diffusion of Al in 4H-SiC: an ab initio study

Yuanchao Huang, Yixiao Qian, Yiqiang Zhang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 015701 (2022)
https://doi.org/10.1063/5.0096577
Published: July 2022
View article titled, Kick-out diffusion of Al in 4H-SiC: an <em>ab initio</em> study
Open the PDF for Kick-out diffusion of Al in 4H-SiC: an <em>ab initio</em> study in another window
Journal Articles

Compensation of p-type doping in Al-doped 4H-SiC

Yuanchao Huang, Rong Wang, Yiqiang Zhang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 185703 (2022)
https://doi.org/10.1063/5.0085510
Published: May 2022
View article titled, Compensation of <em>p</em>-type doping in Al-doped 4H-SiC
Open the PDF for Compensation of <em>p</em>-type doping in Al-doped 4H-SiC in another window
Includes: Supplementary data
Journal Articles

Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon

Tong Zhao, Defan Wu, Wu Lan, Deren Yang, Xiangyang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 155703 (2022)
https://doi.org/10.1063/5.0082542
Published: April 2022
View article titled, Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon
Open the PDF for Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon in another window
Journal Articles

Deformation of 4H-SiC: The role of dopants

Xiaoshuang Liu, Junran Zhang, Binjie Xu, Yunhao Lu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 052105 (2022)
https://doi.org/10.1063/5.0083882
Published: February 2022
View article titled, Deformation of 4H-SiC: The role of dopants
Open the PDF for Deformation of 4H-SiC: The role of dopants in another window
Includes: Supplementary data
Journal Articles

On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures

Tong Zhao, Chenqiang Hua, Wu Lan, Yuxin Sun, Defan Wu, Yunhao Lu, Xiangyang Ma, Deren Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 145702 (2021)
https://doi.org/10.1063/5.0045680
Published: April 2021
View article titled, On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures
Open the PDF for On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures in another window