1-9 of 9
Dennis Lin
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Editor’s Pick
Zaoyang Lin, Sven Dekelver, Daire Cott, Benjamin Groven, Stefanie Sergeant, Thierry Conard, Xiangyu Wu, Pierre Morin, Dennis Lin, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Annelies Delabie
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062202 (2024)
https://doi.org/10.1116/6.0003894
Published: October 2024
View article titled, Impact of monolayer WS<sub>2</sub> surface properties on the gate dielectrics formation by atomic layer deposition
Open the PDF for Impact of monolayer WS<sub>2</sub> surface properties on the gate dielectrics formation by atomic layer deposition in another window
Journal Articles

Spin-on-diffussants for doping in transition metal dichalcogenide semiconductors

Editor’s Pick
Surajit Sutar, Daniele Chiappe, Thomas Nuytten, Thierry Conard, Inge Asselberghs, Dennis Lin, Iuliana Radu
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 212102 (2019)
https://doi.org/10.1063/1.5091553
Published: May 2019
View article titled, Spin-on-diffussants for doping in transition metal dichalcogenide semiconductors
Open the PDF for Spin-on-diffussants for doping in transition metal dichalcogenide semiconductors in another window
Journal Articles

A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications

Yida Li, Alireza Alian, Maheswari Sivan, Li Huang, Kah Wee Ang, Dennis Lin, Dan Mocuta, Nadine Collaert, Aaron V.-Y. Thean
Journal: APL Materials
APL Mater. 7, 031503 (2019)
https://doi.org/10.1063/1.5074181
Published: February 2019
View article titled, A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications
Open the PDF for A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications in another window
Includes: Supplementary data
Journal Articles

On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Abhitosh Vais, Jacopo Franco, Dennis Lin, Vamsi Putcha, Sonja Sioncke, Anda Mocuta, Nadine Collaert, Aaron Thean, Kristin De Meyer
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 144504 (2017)
https://doi.org/10.1063/1.4980170
Published: April 2017
View article titled, On the distribution of oxide defect levels in Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis
Open the PDF for On the distribution of oxide defect levels in Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis in another window
Journal Articles

Transport properties of chemically synthesized MoS2 – Dielectric effects and defects scattering

Massimo Mongillo, Daniele Chiappe, Goutham Arutchelvan, Inge Asselberghs, Marta Perucchini, Mauricio Manfrini, Dennis Lin, Cedric Huyghebaert, Iuliana Radu
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 233102 (2016)
https://doi.org/10.1063/1.4971775
Published: December 2016
View article titled, Transport properties of chemically synthesized MoS<sub>2</sub> – Dielectric effects and defects scattering
Open the PDF for Transport properties of chemically synthesized MoS<sub>2</sub> – Dielectric effects and defects scattering in another window
Journal Articles

Hf-based high-k dielectrics for p-Ge MOS gate stacks

Sivan Fadida, Felix Palumbo, Laura Nyns, Dennis Lin, Sven Van Elshocht, Matty Caymax, Moshe Eizenberg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 03D105 (2014)
https://doi.org/10.1116/1.4837295
Published: December 2013
View article titled, Hf-based high-k dielectrics for p-Ge MOS gate stacks
Open the PDF for Hf-based high-k dielectrics for p-Ge MOS gate stacks in another window
Journal Articles

Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors

Xiao Sun, Clement Merckling, Guy Brammertz, Dennis Lin, Johan Dekoster, Sharon Cui, T. P. Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 054102 (2012)
https://doi.org/10.1063/1.3691898
Published: March 2012
View article titled, Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors
Open the PDF for Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors in another window
Journal Articles

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Shaoren Deng, Qi Xie, Davy Deduytsche, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xinping Qu, Christophe Detavernier
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 052906 (2011)
https://doi.org/10.1063/1.3622649
Published: August 2011
View article titled, Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
Open the PDF for Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices in another window
Journal Articles

Electrical characterization of InGaAs ultra-shallow junctions

Dirch H. Petersen, Ole Hansen, Peter Bøggild, Rong Lin, Peter F. Nielsen, Dennis Lin, Christoph Adelmann, Alireza Alian, Clement Merckling, Julien Penaud, Guy Brammertz, Jozefien Goossens, Wilfried Vandervorst, Trudo Clarysse
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1C41–C1C47 (2010)
https://doi.org/10.1116/1.3231492
Published: March 2010
View article titled, Electrical characterization of InGaAs ultra-shallow junctions
Open the PDF for Electrical characterization of InGaAs ultra-shallow junctions in another window