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Journal Articles

In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system

Editor’s Pick
Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann, Joshua T. Buontempo, Kathleen T. Smith, Pushpanshu Tripathi, Jacob Steele, Debdeep Jena, Darrell G. Schlom, Huili Grace Xing, Michael O. Thompson, Hari P. Nair
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 242103 (2024)
https://doi.org/10.1063/5.0239152
Published: December 2024
View article titled, <em>In situ</em> etching of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> using <em>tert</em>-butyl chloride in an MOCVD system
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Journal Articles

Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification

Editor’s Pick
Kathleen T. Smith, Cameron A. Gorsak, Joshua T. Buontempo, Bennett J. Cromer, Takumi Ikenoue, Hemant Gulupalli, Michael O. Thompson, Debdeep Jena, Hari P. Nair, Huili Grace Xing
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 215302 (2024)
https://doi.org/10.1063/5.0238720
Published: December 2024
View article titled, Chasing Schottky–Mott: Metal-first non-alloyed contacts to <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> for interface quality and minimal surface modification
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Journal Articles

Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures

Changkai Yu, Zexuan Zhang, Debdeep Jena, Huili Grace Xing, YongJin Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 232101 (2024)
https://doi.org/10.1063/5.0241444
Published: December 2024
View article titled, Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures
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Journal Articles

Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures

Chandrashekhar P. Savant, Anita Verma, Thai-Son Nguyen, Len van Deurzen, Yu-Hsin Chen, Zhiren He, Salva S. Rezaie, Jakob Gollwitzer, Benjamin Gregory, Suchismita Sarker, Jacob Ruff, Guru Khalsa, Andrej Singer, David A. Muller, Huili G. Xing, Debdeep Jena, Joseph Casamento
Journal: APL Materials
APL Mater. 12, 111108 (2024)
https://doi.org/10.1063/5.0222995
Published: November 2024
View article titled, Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures
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Journal Articles

Lattice-matched multiple channel AlScN/GaN heterostructures

Thai-Son Nguyen, Naomi Pieczulewski, Chandrashekhar Savant, Joshua J. P. Cooper, Joseph Casamento, Rachel S. Goldman, David A. Muller, Huili G. Xing, Debdeep Jena
Journal: APL Materials
APL Mater. 12, 101117 (2024)
https://doi.org/10.1063/5.0216133
Published: October 2024
View article titled, Lattice-matched multiple channel AlScN/GaN heterostructures
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Journal Articles

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Yu-Hsin Chen, Jimy Encomendero, Chandrashekhar Savant, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142110 (2024)
https://doi.org/10.1063/5.0228253
Published: October 2024
View article titled, High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
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Journal Articles

Ferroelectric AlBN films by molecular beam epitaxy

Featured
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto, Takuya Maeda, Shubham Jadhav, Joongwon Lee, Madhav Ramesh, Eungkyun Kim, Thai-Son Nguyen, Yu-Hsin Chen, Joseph Casamento, Farhan Rana, Amit Lal, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 072902 (2024)
https://doi.org/10.1063/5.0181217
Published: August 2024
View article titled, Ferroelectric AlBN films by molecular beam epitaxy
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Journal Articles

Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h

Jacob Steele, Kathy Azizie, Naomi Pieczulewski, Yunjo Kim, Shin Mou, Thaddeus J. Asel, Adam T. Neal, Debdeep Jena, Huili G. Xing, David A. Muller, Takeyoshi Onuma, Darrell G. Schlom
Journal: APL Materials
APL Mater. 12, 041113 (2024)
https://doi.org/10.1063/5.0170095
Published: April 2024
View article titled, Epitaxial growth of α-(Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> by suboxide molecular-beam epitaxy at 1 µm/h
Open the PDF for Epitaxial growth of α-(Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> by suboxide molecular-beam epitaxy at 1 µm/h in another window
Includes: Supplementary data
Journal Articles

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Featured
Yu-Hsin Chen, Jimy Encomendero, Chandrashekhar Savant, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 152111 (2024)
https://doi.org/10.1063/5.0190822
Published: April 2024
View article titled, Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
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Includes: Supplementary data
Journal Articles

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill, Hsin Wei (Sheena) Huang, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 102109 (2024)
https://doi.org/10.1063/5.0189419
Published: March 2024
View article titled, Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates
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Journal Articles

Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt
Journal: APL Materials
APL Mater. 12, 019902 (2024)
https://doi.org/10.1063/5.0192370
Published: January 2024
View article titled, Erratum: “Growth of β-Ga<sub>2</sub>O<sub>3</sub> and ε/κ-Ga<sub>2</sub>O<sub>3</sub> on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]
Open the PDF for Erratum: “Growth of β-Ga<sub>2</sub>O<sub>3</sub> and ε/κ-Ga<sub>2</sub>O<sub>3</sub> on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] in another window
Journal Articles

Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

Editor’s Pick
Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt
Journal: APL Materials
APL Mater. 12, 011120 (2024)
https://doi.org/10.1063/5.0180041
Published: January 2024
View article titled, Growth, catalysis, and faceting of α-Ga<sub>2</sub>O<sub>3</sub> and α-(In<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> on <em>m</em>-plane α-Al<sub>2</sub>O<sub>3</sub> by molecular beam epitaxy
Open the PDF for Growth, catalysis, and faceting of α-Ga<sub>2</sub>O<sub>3</sub> and α-(In<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> on <em>m</em>-plane α-Al<sub>2</sub>O<sub>3</sub> by molecular beam epitaxy in another window
Includes: Supplementary data
Journal Articles

Non-alloyed ohmic contacts to (010) β -Ga2O3 with low contact resistance

Kathleen T. Smith, Cameron A. Gorsak, Avijit Kalra, Bennett J. Cromer, Kathy Azizie, Daniel M. Dryden, Darrell G. Schlom, Debdeep Jena, Hari P. Nair, Huili Grace Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 242101 (2023)
https://doi.org/10.1063/5.0177618
Published: December 2023
View article titled, Non-alloyed ohmic contacts to (010) <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> with low contact resistance
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Includes: Supplementary data
Journal Articles

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

M. E. Zvanut, Jackson P. Hanle, Subash Paudel, Ryan Page, Chandrashekhar Savant, Yongjin Cho, H. Grace Xing, Debdeep Jena
Journal: AIP Advances
AIP Advances 13, 125210 (2023)
https://doi.org/10.1063/5.0180912
Published: December 2023
View article titled, An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content Al<sub>x</sub>Ga<sub>1−x</sub>N
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Journal Articles

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt
Journal: APL Materials
APL Mater. 11, 111113 (2023)
https://doi.org/10.1063/5.0174373
Published: November 2023
View article titled, Growth of β-Ga<sub>2</sub>O<sub>3</sub> and ϵ/κ-Ga<sub>2</sub>O<sub>3</sub> on AlN(0001) by molecular-beam epitaxy
Open the PDF for Growth of β-Ga<sub>2</sub>O<sub>3</sub> and ϵ/κ-Ga<sub>2</sub>O<sub>3</sub> on AlN(0001) by molecular-beam epitaxy in another window
Journal Articles

AlN/AlGaN/AlN quantum well channel HEMTs

Jashan Singhal, Eungkyun Kim, Austin Hickman, Reet Chaudhuri, Yongjin Cho, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 222106 (2023)
https://doi.org/10.1063/5.0145582
Published: June 2023
View article titled, AlN/AlGaN/AlN quantum well channel HEMTs
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Journal Articles

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Editor’s Pick
Zexuan Zhang, Jashan Singhal, Shivali Agrawal, Eungkyun Kim, Vladimir Protasenko, Masato Toita, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212106 (2023)
https://doi.org/10.1063/5.0145826
Published: May 2023
View article titled, Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates
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Journal Articles

Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environments

Editor’s Pick
Thomas J. Smart, Felix V. E. Hensling, Dong Yeong Kim, Lena N. Majer, Y. Eren Suyolcu, Dominik Dereh, Darrell G. Schlom, Debdeep Jena, Jochen Mannhart, Wolfgang Braun
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042701 (2023)
https://doi.org/10.1116/6.0002632
Published: May 2023
View article titled, Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environments
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Journal Articles

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom
Journal: APL Materials
APL Mater. 11, 041102 (2023)
https://doi.org/10.1063/5.0139622
Published: April 2023
View article titled, Silicon-doped <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> films grown at 1 <em>µ</em>m/h by suboxide molecular-beam epitaxy
Open the PDF for Silicon-doped <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> films grown at 1 <em>µ</em>m/h by suboxide molecular-beam epitaxy in another window
Includes: Supplementary data
Journal Articles

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 092104 (2023)
https://doi.org/10.1063/5.0138939
Published: March 2023
View article titled, N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
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