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Journal Articles

Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT

Jingxuan Wei, Nannan Li, Yu Zhang, Xuefeng Wu, Jiyuan Zhu, Rongxu Bai, Xin Chao, Wenrui Zhang, Li Ji, Qingqing Sun, David Wei Zhang, Shen Hu

AIP Advances 14, 115122 (2024)

https://doi.org/10.1063/5.0232559

Published: November 2024

View article titled, Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT

Journal Articles

Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

Junyan Zhu, Jihong Ding, Keqing OuYang, Xinbo Zou, Hongping Ma, Liang Li, Debin Zhang, Jianjun Zhou, Yiwu Qiu, Xinjie Zhou, Tao Wang, Wei Huang, David Wei Zhang

Appl. Phys. Lett. 125, 132103 (2024)

https://doi.org/10.1063/5.0222225

Published: September 2024

View article titled, Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

Journal Articles

Permittivity enhancement of Al₂O₃/ZrO₂ dielectrics with the incorporation of Pt nanoparticles

Bao Zhu, Ze Shang, Chenyan Wang, Xiaohan Wu, David Wei Zhang

J. Appl. Phys. 136, 105302 (2024)

https://doi.org/10.1063/5.0218456

Published: September 2024

View article titled, Permittivity enhancement of Al2O3/ZrO2 dielectrics with the incorporation of Pt nanoparticles

Journal Articles

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Xuepei Wang, Maokun Wu, Ting Zhang, Boyao Cui, Yu-Chun Li, Jinhao Liu, Yishan Wu, Yichen Wen, Sheng Ye, Pengpeng Ren, David Wei Zhang, Hong-Liang Lu, Runsheng Wang, Zhigang Ji, Ru Huang

Appl. Phys. Lett. 124, 232901 (2024)

https://doi.org/10.1063/5.0207775

Published: June 2024

View article titled, Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films

Journal Articles

Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications

Kangli Xu, Tianyu Wang, Jiajie Yu, Yongkai Liu, Zhenhai Li, Chen Lu, Jieru Song, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen

Appl. Phys. Rev. 11, 021303 (2024)

https://doi.org/10.1063/5.0175439

Published: April 2024

View article titled, Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications

Journal Articles

Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology

Lewen Qian, Xin Sun, Tao Liu, Ziqiang Huang, Xinlong Guo, Maolin Pan, Dawei Wang, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang

J. Vac. Sci. Technol. A 42, 023423 (2024)

https://doi.org/10.1116/6.0003357

Published: February 2024

View article titled, Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology

Journal Articles

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou

J. Vac. Sci. Technol. A 42, 023418 (2024)

https://doi.org/10.1116/6.0003298

Published: February 2024

View article titled, Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures

Journal Articles

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO₂ thin films

Li Feng, Yu-Chun Li, Teng Huang, Hong-Liang Lu, David Wei Zhang

AIP Advances 14, 015105 (2024)

https://doi.org/10.1063/5.0175930

Published: January 2024

View article titled, Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Journal Articles

Oxygen vacancies stabilized 180 ° charged domain walls in ferroelectric hafnium oxide

Zhongshan Xu, Xiaona Zhu, Guo-Dong Zhao, David Wei Zhang, Shaofeng Yu

Appl. Phys. Lett. 124, 012902 (2024)

https://doi.org/10.1063/5.0179879

Published: January 2024

View article titled, Oxygen vacancies stabilized 180 ° charged domain walls in ferroelectric hafnium oxide

Journal Articles

Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer

Yu-Chun Li, Xiao-Xi Li, Teng Huang, Ze-Yu Gu, Qiu-Jun Yu, Yin-Chi Liu, David Wei Zhang, Xiao-Na Zhu, Hong-Liang Lu

Appl. Phys. Lett. 122, 172902 (2023)

https://doi.org/10.1063/5.0138158

Published: April 2023

View article titled, Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer

Includes: Supplementary data

Journal Articles

Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Peng Wang, Yizhou Jiang, Yitian Gu, Menglin Huang, Wei Huang, Shiyou Chen, Zhiqiang Xiao, Xinbo Zou, Yiwu Qiu, Xinjie Zhou, Jianjun Zhou, David Wei Zhang

Appl. Phys. Lett. 121, 143501 (2022)

https://doi.org/10.1063/5.0094090

Published: October 2022

View article titled, Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Journal Articles

Amorphous semi-insulating Al-doped In₂O₃ growth by atomic layer deposition for thin-film transistors

Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji

J. Vac. Sci. Technol. A 40, 042402 (2022)

https://doi.org/10.1116/6.0001787

Published: May 2022

View article titled, Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors

Includes: Supplementary data

Journal Articles

Formation of quasi-two-dimensional electron gas at the interface of ZnO/Ga₂O₃ heterostructure

Hongliang Lu, Kai Liu, Hongping Ma, Xuefeng Zhao, David Wei Zhang, Yuhang Liu

AIP Advances 11, 065125 (2021)

https://doi.org/10.1063/5.0053491

Published: June 2021

View article titled, Formation of quasi-two-dimensional electron gas at the interface of ZnO/Ga2O3 heterostructure

Includes: Supplementary data

Journal Articles

MoS₂-based ferroelectric field-effect transistor with atomic layer deposited Hf_0.5Zr_0.5O₂ films toward memory applications

Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang

AIP Advances 10, 065107 (2020)

https://doi.org/10.1063/5.0010829

Published: June 2020

View article titled, MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

Journal Articles

Backside passivation for improving the noise performance in CMOS image sensor

Peng Sun, Sheng Hu, Wen Zou, Peng-Fei Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, David Wei Zhang

AIP Advances 10, 045229 (2020)

https://doi.org/10.1063/5.0006700

Published: April 2020

View article titled, Backside passivation for improving the noise performance in CMOS image sensor

Journal Articles

Synthesis of large-scale few-layer PtS₂ films by chemical vapor deposition

Donghui Zhao, Sheng Xie, Yang Wang, Hao Zhu, Lin Chen, Qingqing Sun, David Wei Zhang

AIP Advances 9, 025225 (2019)

https://doi.org/10.1063/1.5086447

Published: February 2019

View article titled, Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition

Journal Articles

Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Li-Yuan Zhu, Jian-Guo Yang, Kaiping Yuan, Hong-Yan Chen, Tao Wang, Hong-Ping Ma, Wei Huang, Hong-Liang Lu, David Wei Zhang

APL Mater. 6, 121109 (2018)

https://doi.org/10.1063/1.5057889

Published: December 2018

View article titled, Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Includes: Supplementary data

Journal Articles

Band alignment of In₂O₃/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 113, 031603 (2018)

https://doi.org/10.1063/1.5038615

Published: July 2018

View article titled, Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Journal Articles

Model of dielectric breakdown in hafnia-based ferroelectric capacitors

Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang, Lin Chen, David Wei Zhang, Xiang-Shui Miao

J. Appl. Phys. 124, 024103 (2018)

https://doi.org/10.1063/1.5031491

Published: July 2018

View article titled, Model of dielectric breakdown in hafnia-based ferroelectric capacitors

Journal Articles

Band alignment of AlN/β-Ga₂O₃ heterojunction interface measured by x-ray photoelectron spectroscopy

Jin-Xin Chen, Jia-Jia Tao, Hong-Ping Ma, Hao Zhang, Ji-Jun Feng, Wen-Jun Liu, Changtai Xia, Hong-Liang Lu, David Wei Zhang

Appl. Phys. Lett. 112, 261602 (2018)

https://doi.org/10.1063/1.5035372

Published: June 2018

View article titled, Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

NARROW

Topics

Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT

Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

Permittivity enhancement of Al₂O₃/ZrO₂ dielectrics with the incorporation of Pt nanoparticles

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications

Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO₂ thin films

Oxygen vacancies stabilized 180 ° charged domain walls in ferroelectric hafnium oxide

Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer

Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Amorphous semi-insulating Al-doped In₂O₃ growth by atomic layer deposition for thin-film transistors

Formation of quasi-two-dimensional electron gas at the interface of ZnO/Ga₂O₃ heterostructure

MoS₂-based ferroelectric field-effect transistor with atomic layer deposited Hf_0.5Zr_0.5O₂ films toward memory applications

Backside passivation for improving the noise performance in CMOS image sensor

Synthesis of large-scale few-layer PtS₂ films by chemical vapor deposition

Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Band alignment of In₂O₃/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

Model of dielectric breakdown in hafnia-based ferroelectric capacitors

Band alignment of AlN/β-Ga₂O₃ heterojunction interface measured by x-ray photoelectron spectroscopy

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