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Journal Articles

Advances in the Thermodynamics of Ideal Gases by Means of Computer Simulations

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David Sands, Jeremy Dunning‐Davies
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1316, 141–164 (2010)
https://doi.org/10.1063/1.3536429
Published: December 2010
View article titled, Advances in the Thermodynamics of Ideal Gases by Means of Computer Simulations
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Journal Articles

Conductance measurements on p‐Si/SiO2 metal‐oxide‐semiconductor capacitors

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M. H. Tayarani‐Najaran, David Sands, Kevin M. Brunson, Clive B. Thomas
Journal: Journal of Applied Physics
J. Appl. Phys. 67, 1980–1986 (1990)
https://doi.org/10.1063/1.345577
Published: February 1990
View article titled, Conductance measurements on p‐Si/SiO2 metal‐oxide‐semiconductor capacitors
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Journal Articles

Growth of wide band gap polycrystalline semi‐insulating polycrystalline silicon

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David Sands, Kevin M. Brunson, D. M. Spink, Clive B. Thomas, D. McNeill, A. A. McDonald, S. Jennings, P. J. Rosser
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 16–20 (1990)
https://doi.org/10.1116/1.584858
Published: January 1990
View article titled, Growth of wide band gap polycrystalline semi‐insulating polycrystalline silicon
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Journal Articles

Electronic states at the interface between thin films of ZnS and crystalline p‐silicon

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David Sands, Kevin M. Brunson, Clive B. Thomas
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 1340–1343 (1987)
https://doi.org/10.1063/1.339635
Published: August 1987
View article titled, Electronic states at the interface between thin films of ZnS and crystalline p‐silicon
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Journal Articles

The contribution of bulk states to the ac conductance of metal‐insulator‐semiconductor diodes

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Kevin M. Brunson, David Sands, Clive B. Thomas, Hari S. Reehal
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 185–189 (1987)
https://doi.org/10.1063/1.339179
Published: July 1987
View article titled, The contribution of bulk states to the ac conductance of metal‐insulator‐semiconductor diodes
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Journal Articles

The density of localized states at the semi‐insulating polycrystalline and single‐crystal silicon interface

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Kevin M. Brunson, David Sands, Clive B. Thomas, Hari S. Reehal
Journal: Journal of Applied Physics
J. Appl. Phys. 60, 3599–3604 (1986)
https://doi.org/10.1063/1.337565
Published: November 1986
View article titled, The density of localized states at the semi‐insulating polycrystalline and single‐crystal silicon interface
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