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David B. Janes
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Journal Articles

Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors

Jiseok Kwon, Collin J. Delker, C. Thomas Harris, Suprem R. Das, David B. Janes
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 094501 (2020)
https://doi.org/10.1063/5.0014759
Published: September 2020
View article titled, Experimental and modeling study of 1/<em>f</em> noise in multilayer MoS<sub>2</sub> and MoSe<sub>2</sub> field-effect transistors
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Includes: Supplementary data
Journal Articles

Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors

Jiseok Kwon, Joon Hyeong Park, Collin J. Delker, Charles T. Harris, Brian Swartzentruber, Suprem R. Das, David B. Janes
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 113502 (2019)
https://doi.org/10.1063/1.5063501
Published: March 2019
View article titled, Transitions between channel and contact regimes of low-frequency noise in many-layer MoS<sub>2</sub> field effect transistors
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Includes: Supplementary data
Journal Articles

Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets

Robin B. Jacobs-Gedrim, Michael T. Murphy, Fan Yang, Nikhil Jain, Mariyappan Shanmugam, Eui Sang Song, Yudhister Kandel, Parham Hesamaddin, Hong Yu Yu, M. P. Anantram, David B. Janes, Bin Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 133101 (2018)
https://doi.org/10.1063/1.5013099
Published: March 2018
View article titled, Reversible phase-change behavior in two-dimensional antimony telluride (Sb<sub>2</sub>Te<sub>3</sub>) nanosheets
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Includes: Supplementary data
Journal Articles

Super-Joule heating in graphene and silver nanowire network

Kerry Maize, Suprem R. Das, Sajia Sadeque, Amr M. S. Mohammed, Ali Shakouri, David B. Janes, Muhammad A. Alam
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 143104 (2015)
https://doi.org/10.1063/1.4916943
Published: April 2015
View article titled, Super-Joule heating in graphene and silver nanowire network
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Includes: Supplementary data
Journal Articles

Low-frequency noise in MoSe2 field effect transistors

Suprem R. Das, Jiseok Kwon, Abhijith Prakash, Collin J. Delker, Saptarshi Das, David B. Janes
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 083507 (2015)
https://doi.org/10.1063/1.4913714
Published: February 2015
View article titled, Low-frequency noise in MoSe<sub>2</sub> field effect transistors
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Journal Articles

Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

Suprem R. Das, Cem Akatay, Asaduzzaman Mohammad, Mohammad Ryyan Khan, Kosuke Maeda, Russell S. Deacon, Koji Ishibashi, Yong P. Chen, Timothy D. Sands, Muhammad A. Alam, David B. Janes
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 083506 (2014)
https://doi.org/10.1063/1.4893704
Published: August 2014
View article titled, Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties
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Includes: Supplementary data
Journal Articles

Photonically excited electron emission from modified graphitic nanopetal arrays

Patrick T. McCarthy, Scott J. Vander Laan, David B. Janes, Timothy S. Fisher
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 193710 (2013)
https://doi.org/10.1063/1.4805038
Published: May 2013
View article titled, Photonically excited electron emission from modified graphitic nanopetal arrays
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Includes: Supplementary data
Journal Articles

Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications

Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju
Journal: AIP Advances
AIP Advances 3, 012112 (2013)
https://doi.org/10.1063/1.4789405
Published: January 2013
View article titled, Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
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Journal Articles

Nanoscale contacts between semiconducting nanowires and metallic graphenes

Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 063122 (2012)
https://doi.org/10.1063/1.4745210
Published: August 2012
View article titled, Nanoscale contacts between semiconducting nanowires and metallic graphenes
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Journal Articles

Room temperature device performance of electrodeposited InSb nanowire field effect transistors

Suprem R. Das, Collin J. Delker, Dmitri Zakharov, Yong P. Chen, Timothy D. Sands, David B. Janes
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 243504 (2011)
https://doi.org/10.1063/1.3587638
Published: June 2011
View article titled, Room temperature device performance of electrodeposited InSb nanowire field effect transistors
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Journal Articles

Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results

Adina Scott, Chad Risko, Nicholas Valley, Mark A. Ratner, David B. Janes
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 024505 (2010)
https://doi.org/10.1063/1.3251466
Published: January 2010
View article titled, Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results
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Journal Articles

Stable and reproducible electronic conduction through DNA molecular junctions

Ajit K. Mahapatro, Gil U. Lee, Kyung J. Jeong, David B. Janes
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 083106 (2009)
https://doi.org/10.1063/1.3186056
Published: August 2009
View article titled, Stable and reproducible electronic conduction through DNA molecular junctions
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Journal Articles

Device considerations for development of conductance-based biosensors

Kangho Lee, Pradeep R. Nair, Adina Scott, Muhammad A. Alam, David B. Janes
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 102046 (2009)
https://doi.org/10.1063/1.3116630
Published: May 2009
View article titled, Device considerations for development of conductance-based biosensors
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Journal Articles

Characterization of electrochemically grafted molecular layers on silicon for electronic device applications

Adina Scott, David B. Janes
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 073512 (2009)
https://doi.org/10.1063/1.3103337
Published: April 2009
View article titled, Characterization of electrochemically grafted molecular layers on silicon for electronic device applications
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Journal Articles

Toward surround gates on vertical single-walled carbon nanotube devices

Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 821–826 (2009)
https://doi.org/10.1116/1.3054266
Published: March 2009
View article titled, Toward surround gates on vertical single-walled carbon nanotube devices
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Journal Articles

Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films

Joshua T. Smith, Qingling Hang, Aaron D. Franklin, David B. Janes, Timothy D. Sands
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 043108 (2008)
https://doi.org/10.1063/1.2957991
Published: July 2008
View article titled, Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films
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Journal Articles

1 ∕ f noise of Sn O 2 nanowire transistors

Sanghyun Ju, Pochiang Chen, Chongwu Zhou, Young-geun Ha, Antonio Facchetti, Tobin J. Marks, Sun Kook Kim, Saeed Mohammadi, David B. Janes
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 243120 (2008)
https://doi.org/10.1063/1.2947586
Published: June 2008
View article titled, 1 ∕ f noise of Sn O 2 nanowire transistors
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Journal Articles

Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

Kangho Lee, Pradeep R. Nair, Muhammad A. Alam, David B. Janes, Heeyeon P. Wampler, Dmitry Y. Zemlyanov, Albena Ivanisevic
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 114510 (2008)
https://doi.org/10.1063/1.2936853
Published: June 2008
View article titled, Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors
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Journal Articles

High performance In 2 O 3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Fumiaki Ishikawa, Pochiang Chen, Hsiao-Kang Chang, Chongwu Zhou, Young-geun Ha, Jun Liu, Antonio Facchetti, Tobin J. Marks, David B. Janes
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 222105 (2008)
https://doi.org/10.1063/1.2937111
Published: June 2008
View article titled, High performance In 2 O 3 nanowire transistors using organic gate nanodielectrics
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Journal Articles

Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

Kangho Lee, Gang Lu, Antonio Facchetti, David B. Janes, Tobin J. Marks
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 123509 (2008)
https://doi.org/10.1063/1.2899965
Published: March 2008
View article titled, Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors
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