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David A. Muller
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Journal Articles

Structural properties and recrystallization effects in ion beam modified B20-type FeGe films

Jiangteng Liu, Ryan Schoell, Xiyue S. Zhang, Hongbin Yang, M. B. Venuti, Hanjong Paik, David A. Muller, Tzu-Ming Lu, Khalid Hattar, Serena Eley
Journal: APL Materials
APL Mater. 13, 011112 (2025)
https://doi.org/10.1063/5.0237131
Published: January 2025
View articletitled, Structural properties and recrystallization effects in ion beam modified B20-type FeGe films
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Journal Articles

Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures

Chandrashekhar P. Savant, Anita Verma, Thai-Son Nguyen, Len van Deurzen, Yu-Hsin Chen, Zhiren He, Salva S. Rezaie, Jakob Gollwitzer, Benjamin Gregory, Suchismita Sarker, Jacob Ruff, Guru Khalsa, Andrej Singer, David A. Muller, Huili G. Xing, Debdeep Jena, Joseph Casamento
Journal: APL Materials
APL Mater. 12, 111108 (2024)
https://doi.org/10.1063/5.0222995
Published: November 2024
View articletitled, Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures
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Journal Articles

Lattice-matched multiple channel AlScN/GaN heterostructures

Thai-Son Nguyen, Naomi Pieczulewski, Chandrashekhar Savant, Joshua J. P. Cooper, Joseph Casamento, Rachel S. Goldman, David A. Muller, Huili G. Xing, Debdeep Jena
Journal: APL Materials
APL Mater. 12, 101117 (2024)
https://doi.org/10.1063/5.0216133
Published: October 2024
View articletitled, Lattice-matched multiple channel AlScN/GaN heterostructures
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Journal Articles

Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h

Jacob Steele, Kathy Azizie, Naomi Pieczulewski, Yunjo Kim, Shin Mou, Thaddeus J. Asel, Adam T. Neal, Debdeep Jena, Huili G. Xing, David A. Muller, Takeyoshi Onuma, Darrell G. Schlom
Journal: APL Materials
APL Mater. 12, 041113 (2024)
https://doi.org/10.1063/5.0170095
Published: April 2024
View articletitled, Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h
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Includes: Supplementary data
Journal Articles

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time

Katie R. Gann, Naomi Pieczulewski, Cameron A. Gorsak, Karen Heinselman, Thaddeus J. Asel, Brenton A. Noesges, Kathleen T. Smith, Daniel M. Dryden, Huili Grace Xing, Hari P. Nair, David A. Muller, Michael O. Thompson
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 015302 (2024)
https://doi.org/10.1063/5.0184946
Published: January 2024
View articletitled, Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time
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Journal Articles

Thermodynamic route of Nb3Sn nucleation: Role of oxygen

Zeming Sun, Darrah K. Dare, Zhaslan Baraissov, David A. Muller, Michael O. Thompson, Matthias U. Liepe
Journal: APL Materials
APL Mater. 11, 071118 (2023)
https://doi.org/10.1063/5.0157659
Published: July 2023
View articletitled, Thermodynamic route of Nb3Sn nucleation: Role of oxygen
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Journal Articles

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom
Journal: APL Materials
APL Mater. 11, 041102 (2023)
https://doi.org/10.1063/5.0139622
Published: April 2023
View articletitled, Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
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Includes: Supplementary data
Journal Articles

Molecular beam epitaxy of KTaO3

Featured
Tobias Schwaigert, Salva Salmani-Rezaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022703 (2023)
https://doi.org/10.1116/6.0002223
Published: February 2023
View articletitled, Molecular beam epitaxy of KTaO3
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Includes: Supplementary data
Journal Articles

Initial nucleation of metastable γ -Ga2O3 during sub-millisecond thermal anneals of amorphous Ga2O3

Katie R. Gann, Celesta S. Chang, Ming-Chiang Chang, Duncan R. Sutherland, Aine B. Connolly, David A. Muller, Robert B. van Dover, Michael O. Thompson
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062102 (2022)
https://doi.org/10.1063/5.0087093
Published: August 2022
View articletitled, Initial nucleation of metastable γ -Ga2O3 during sub-millisecond thermal anneals of amorphous Ga2O3
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Includes: Supplementary data
Journal Articles

Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy

John G. Wright, Celesta S. Chang, David A. Muller, Huili G. Xing, Debdeep Jena
Journal: APL Materials
APL Mater. 10, 051103 (2022)
https://doi.org/10.1063/5.0083184
Published: May 2022
View articletitled, Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy
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Journal Articles

Giant bulk spin–orbit torque and efficient electrical switching in single ferrimagnetic FeTb layers with strong perpendicular magnetic anisotropy

Featured
Qianbiao Liu, Lijun Zhu, Xiyue S. Zhang, David A. Muller, Daniel C. Ralph
Journal: Applied Physics Reviews
Appl. Phys. Rev. 9, 021402 (2022)
https://doi.org/10.1063/5.0087260
Published: April 2022
View articletitled, Giant bulk spin–orbit torque and efficient electrical switching in single ferrimagnetic FeTb layers with strong perpendicular magnetic anisotropy
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Includes: Supplementary data
Journal Articles

Homoepitaxial β -Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1

Editor’s Pick
Hyung Min Jeon, Kevin D. Leedy, David C. Look, Celesta S. Chang, David A. Muller, Stefan C. Badescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak
Journal: APL Materials
APL Mater. 9, 101105 (2021)
https://doi.org/10.1063/5.0062056
Published: October 2021
View articletitled, Homoepitaxial β -Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1
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Journal Articles

Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1 − xN/GaN heterostructures

Joseph Casamento, Hyunjea Lee, Celesta S. Chang, Matthew F. Besser, Takuya Maeda, David A. Muller, Huili (Grace) Xing, Debdeep Jena
Journal: APL Materials
APL Mater. 9, 091106 (2021)
https://doi.org/10.1063/5.0054522
Published: September 2021
View articletitled, Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1 − xN/GaN heterostructures
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Includes: Supplementary data
Journal Articles

High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

Reet Chaudhuri, Zhen Chen, David A. Muller, Huili Grace Xing, Debdeep Jena
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 025703 (2021)
https://doi.org/10.1063/5.0054321
Published: July 2021
View articletitled, High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers
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Includes: Supplementary data
Journal Articles

γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films

Editor’s Pick
Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller
Journal: APL Materials
APL Mater. 9, 051119 (2021)
https://doi.org/10.1063/5.0038861
Published: May 2021
View articletitled, γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
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Includes: Supplementary data
Journal Articles

Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffmann, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
Journal: APL Materials
APL Mater. 9, 049901 (2021)
https://doi.org/10.1063/5.0050412
Published: April 2021
View articletitled, Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]
Open the PDF for Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] in another window
Journal Articles

DyFe2O4: A new trigonal rare-earth ferrite grown by molecular-beam epitaxy

Rachel A. Steinhardt, Charles M. Brooks, Gabriela C. Correa, Megan E. Holtz, Ramamoorthy Ramesh, David A. Muller, Julia A. Mundy, Darrell G. Schlom
Journal: APL Materials
APL Mater. 9, 041106 (2021)
https://doi.org/10.1063/5.0038211
Published: April 2021
View articletitled, DyFe2O4: A new trigonal rare-earth ferrite grown by molecular-beam epitaxy
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Journal Articles

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

Featured
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
Journal: APL Materials
APL Mater. 9, 031101 (2021)
https://doi.org/10.1063/5.0035469
Published: March 2021
View articletitled, Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
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Journal Articles

Improved control of atomic layering in perovskite-related homologous series

Matthew R. Barone, Natalie M. Dawley, Hari P. Nair, Berit H. Goodge, Megan E. Holtz, Arsen Soukiassian, Erin E. Fleck, Kiyoung Lee, Yunfa Jia, Tassilo Heeg, Refael Gatt, Yuefeng Nie, David A. Muller, Lena F. Kourkoutis, Darrell G. Schlom
Journal: APL Materials
APL Mater. 9, 021118 (2021)
https://doi.org/10.1063/5.0036087
Published: February 2021
View articletitled, Improved control of atomic layering in perovskite-related homologous series
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Includes: Supplementary data
Journal Articles

Operando control of skyrmion density in a Lorentz transmission electron microscope with current pulses

Albert M. Park, Zhen Chen, Xiyue S. Zhang, Lijun Zhu, David A. Muller, Gregory D. Fuchs
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 233902 (2020)
https://doi.org/10.1063/5.0020373
Published: December 2020
View articletitled, Operando control of skyrmion density in a Lorentz transmission electron microscope with current pulses
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Includes: Supplementary data