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Journal Articles

Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition

Duo Cao, Xinhong Cheng, Li Zheng, Zhongjian Wang, Dawei Xu, Chao Xia, Lingyan Shen, Qian Wang, Yuehui Yu, DaShen Shen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 01A116 (2015)
https://doi.org/10.1116/1.4900935
Published: November 2014
View article titled, Effects of rapid thermal annealing on the properties of HfO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> nanolaminate films deposited by plasma enhanced atomic layer deposition
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Journal Articles

Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si

Duo Cao, Xinhong Cheng, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Lingyan Shen, Yuehui Yu, DaShen Shen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 01A101 (2015)
https://doi.org/10.1116/1.4895010
Published: September 2014
View article titled, Low-temperature plasma-enhanced atomic layer deposition of HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminate structure on Si
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Journal Articles

Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

Li Zheng, Xinhong Cheng, Duo Cao, Zhongjian Wang, Chao Xia, Yuehui Yu, Dashen Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 023112 (2014)
https://doi.org/10.1063/1.4861861
Published: January 2014
View article titled, Property transformation of graphene with Al<sub>2</sub>O<sub>3</sub> films deposited directly by atomic layer deposition
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Journal Articles

Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition

Wenyan Wan, Xinhong Cheng, Duo Cao, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Lingyan Shen, Yuehui Yu, DaShen Shen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 01A127 (2014)
https://doi.org/10.1116/1.4850175
Published: December 2013
View article titled, Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
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Journal Articles

Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films

Duo Cao, Xinhong Cheng, Yuehui Yu, Xiaolong Li, Chunze Liu, Dashen Shen, Stephan Mändl
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 081607 (2013)
https://doi.org/10.1063/1.4819198
Published: August 2013
View article titled, Competitive Si and La effect in HfO<sub>2</sub> phase stabilization in multi-layer (La<sub>2</sub>O<sub>3</sub>)<sub>0.08</sub>(HfO<sub>2</sub>) films
Open the PDF for Competitive Si and La effect in HfO<sub>2</sub> phase stabilization in multi-layer (La<sub>2</sub>O<sub>3</sub>)<sub>0.08</sub>(HfO<sub>2</sub>) films in another window
Journal Articles

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Duo Cao, Xinhong Cheng, Tingting Jia, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu, DaShen Shen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 01A113 (2013)
https://doi.org/10.1116/1.4770497
Published: December 2012
View article titled, Characterization of HfO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> layered stacking deposited on Si substrate
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Journal Articles

Interfacial structures and electrical properties of Hf Al 2 O 5 gate dielectric film annealed with a Ti capping layer

Xinhong Cheng, Li Wan, Zhaorui Song, Yuehui Yu, DaShen Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 152910 (2007)
https://doi.org/10.1063/1.2722665
Published: April 2007
View article titled, Interfacial structures and electrical properties of Hf Al 2 O 5 gate dielectric film annealed with a Ti capping layer
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Journal Articles

Characteristics of Hf x Si y O films grown on Si 0.8 Ge 0.2 layer by electron-beam evaporation

Xinhong Cheng, Zhaorui Song, Yuehui Yu, Wenwei Yang, DaShen Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 122906 (2006)
https://doi.org/10.1063/1.2188598
Published: March 2006
View article titled, Characteristics of Hf x Si y O films grown on Si 0.8 Ge 0.2 layer by electron-beam evaporation
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Journal Articles

A simple Fermi-Dirac integrating circuit

Dennis Hite, Timothy B. Boykin, Nagendra Singh, Dashen Shen
Journal: American Journal of Physics
Am. J. Phys. 73, 856–859 (2005)
https://doi.org/10.1119/1.1938951
Published: September 2005
View article titled, A simple Fermi-Dirac integrating circuit
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