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Daniele Ielmini
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Journal Articles

Roadmap to neuromorphic computing with emerging technologies

Editor’s Pick
Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabe Linares-Barranco, Sabina Spiga, Sergey Savel’ev, Alexander G. Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J. Joshua Yang, Syed Ghazi Sarwat, Abu Sebastian, Thomas Mikolajick, Stefan Slesazeck, Beatriz Noheda, Bernard Dieny, Tuo-Hung (Alex) Hou, Akhil Varri, Frank Brückerhoff-Plückelmann, Wolfram Pernice, Xixiang Zhang, Sebastian Pazos, Mario Lanza, Stefan Wiefels, Regina Dittmann, Wing H. Ng, Mark Buckwell, Horatio R. J. Cox, Daniel J. Mannion, Anthony J. Kenyon, Yingming Lu, Yuchao Yang, Damien Querlioz, Louis Hutin, Elisa Vianello, Sayeed Shafayet Chowdhury, Piergiulio Mannocci, Yimao Cai, Zhong Sun, Giacomo Pedretti, John Paul Strachan, Dmitri Strukov, Manuel Le Gallo, Stefano Ambrogio, Ilia Valov, Rainer Waser
Journal: APL Materials
APL Mater. 12, 109201 (2024)
https://doi.org/10.1063/5.0179424
Published: October 2024
View article titled, Roadmap to neuromorphic computing with emerging technologies
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Journal Articles

Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse

Yankun Cheng, Ya Lin, Tao Zeng, Xuanyu Shan, Zhongqiang Wang, Xiaoning Zhao, Daniele Ielmini, Haiyang Xu, Yichun Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 133503 (2022)
https://doi.org/10.1063/5.0086867
Published: March 2022
View article titled, Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse
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Includes: Supplementary data
Journal Articles

Hot-carrier trap-limited transport in switching chalcogenides

Enrico Piccinini, Andrea Cappelli, Fabrizio Buscemi, Rossella Brunetti, Daniele Ielmini, Massimo Rudan, Carlo Jacoboni
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 083722 (2012)
https://doi.org/10.1063/1.4761997
Published: October 2012
View article titled, Hot-carrier trap-limited transport in switching chalcogenides
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Includes: Supplementary data
Journal Articles

Analysis and modeling of resistive switching statistics

Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, Jordi Suñé
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 074508 (2012)
https://doi.org/10.1063/1.3699369
Published: April 2012
View article titled, Analysis and modeling of resistive switching statistics
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Journal Articles

Physical origin of the resistance drift exponent in amorphous phase change materials

Mattia Boniardi, Daniele Ielmini
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 243506 (2011)
https://doi.org/10.1063/1.3599559
Published: June 2011
View article titled, Physical origin of the resistance drift exponent in amorphous phase change materials
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Journal Articles

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Daniele Ielmini, Federico Nardi, Carlo Cagli
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 053503 (2010)
https://doi.org/10.1063/1.3304167
Published: February 2010
View article titled, Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
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Journal Articles

Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses

Daniele Ielmini, Mattia Boniardi
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 091906 (2009)
https://doi.org/10.1063/1.3094916
Published: March 2009
View article titled, Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses
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Journal Articles

Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Daniele Ielmini, Yuegang Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 054517 (2007)
https://doi.org/10.1063/1.2773688
Published: September 2007
View article titled, Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
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Journal Articles

Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses

Daniele Ielmini, Yuegang Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 192102 (2007)
https://doi.org/10.1063/1.2737137
Published: May 2007
View article titled, Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses
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Journal Articles

Different types of defects in silicon dioxide characterized by their transient behavior

Daniele Ielmini, Alessandro S. Spinelli, Marco Beretta, Andrea L. Lacaita
Journal: Journal of Applied Physics
J. Appl. Phys. 89, 4189–4191 (2001)
https://doi.org/10.1063/1.1352674
Published: April 2001
View article titled, Different types of defects in silicon dioxide characterized by their transient behavior
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Journal Articles

Experimental evidence for recombination-assisted leakage in thin oxides

Daniele Ielmini, Alessandro S. Spinelli, Andrea L. Lacaita
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 1719–1721 (2000)
https://doi.org/10.1063/1.126146
Published: March 2000
View article titled, Experimental evidence for recombination-assisted leakage in thin oxides
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