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Journal Articles

Resistivity size effect in epitaxial VNi2 layers

Minghua Zhang, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105302 (2023)
https://doi.org/10.1063/5.0160462
Published: September 2023
View article titled, Resistivity size effect in epitaxial VNi<sub>2</sub> layers
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Includes: Supplementary data
Journal Articles

Resistivity scaling in CuTi determined from transport measurements and first-principles simulations

Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 045102 (2023)
https://doi.org/10.1063/5.0135132
Published: January 2023
View article titled, Resistivity scaling in CuTi determined from transport measurements and first-principles simulations
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Journal Articles

First-principles prediction of electron grain boundary scattering in fcc metals

Tianji Zhou, Atharv Jog, Daniel Gall
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 241603 (2022)
https://doi.org/10.1063/5.0098822
Published: June 2022
View article titled, First-principles prediction of electron grain boundary scattering in fcc metals
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Includes: Supplementary data
Journal Articles

Effect of electronegativity on electron surface scattering in thin metal layers

Atharv Jog, Erik Milosevic, Pengyuan Zheng, Daniel Gall
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 041601 (2022)
https://doi.org/10.1063/5.0078877
Published: January 2022
View article titled, Effect of electronegativity on electron surface scattering in thin metal layers
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Journal Articles

Resistivity size effect in epitaxial iridium layers

Atharv Jog, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 115103 (2021)
https://doi.org/10.1063/5.0060845
Published: September 2021
View article titled, Resistivity size effect in epitaxial iridium layers
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Includes: Supplementary data
Journal Articles

Resistivity scaling in epitaxial MAX-phase Ti4SiC3(0001) layers

Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 034302 (2021)
https://doi.org/10.1063/5.0054542
Published: July 2021
View article titled, Resistivity scaling in epitaxial MAX-phase Ti<sub>4</sub>SiC<sub>3</sub>(0001) layers
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Journal Articles

Van der Waals epitaxy and remote epitaxy of LiNbO3 thin films by pulsed laser deposition

Ru Jia, Hyun S. Kum, Xin Sun, Yuwei Guo, Baiwei Wang, Peijiao Fang, Jie Jiang, Daniel Gall, Toh-Ming Lu, Morris Washington, Jeehwan Kim, Jian Shi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 040405 (2021)
https://doi.org/10.1116/6.0001109
Published: June 2021
View article titled, Van der Waals epitaxy and remote epitaxy of LiNbO<sub>3</sub> thin films by pulsed laser deposition
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Includes: Supplementary data
Journal Articles

Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials

Linghan Chen, Sushant Kumar, Masataka Yahagi, Daisuke Ando, Yuji Sutou, Daniel Gall, Ravishankar Sundararaman, Junichi Koike
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 035301 (2021)
https://doi.org/10.1063/5.0026837
Published: January 2021
View article titled, Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials
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Journal Articles

Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, stacking faults, and deformation twins

Katayun Barmak, Kadir Sentosun, Amirali Zangiabadi, Erik Milosevic, Daniel Gall, Miroslav Zecevic, Ricardo A. Lebensohn, Jerrold A. Floro
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 045304 (2020)
https://doi.org/10.1063/5.0015188
Published: July 2020
View article titled, Defects in epitaxial Ru(0001) on Al<sub>2</sub>O<sub>3</sub>(0001): Dislocations, stacking faults, and deformation twins
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Journal Articles

Electron scattering at Co(0001) surfaces: Effects of Ti and TiN capping layers

Erik Milosevic, Daniel Gall
Journal: AIP Advances
AIP Advances 10, 055213 (2020)
https://doi.org/10.1063/1.5145327
Published: May 2020
View article titled, Electron scattering at Co(0001) surfaces: Effects of Ti and TiN capping layers
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Journal Articles

Epitaxial metals for interconnects beyond Cu

Katayun Barmak, Sameer Ezzat, Ryan Gusley, Atharv Jog, Sit Kerdsongpanya, Asim Khaniya, Erik Milosevic, William Richardson, Kadir Sentosun, Amirali Zangiabadi, Daniel Gall, William E. Kaden, Eduardo R. Mucciolo, Patrick K. Schelling, Alan C. West, Kevin R. Coffey
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 033406 (2020)
https://doi.org/10.1116/6.0000018
Published: April 2020
View article titled, Epitaxial metals for interconnects beyond Cu
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Journal Articles

The search for the most conductive metal for narrow interconnect lines

Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 050901 (2020)
https://doi.org/10.1063/1.5133671
Published: February 2020
View article titled, The search for the most conductive metal for narrow interconnect lines
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Journal Articles

Electrochemical memristive devices based on submonolayer metal deposition

Prachi Pragnya, Ainsley Pinkowitz, Robert Hull, Daniel Gall
Journal: APL Materials
APL Mater. 7, 101121 (2019)
https://doi.org/10.1063/1.5110889
Published: October 2019
View article titled, Electrochemical memristive devices based on submonolayer metal deposition
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Journal Articles

Resistivity scaling and electron surface scattering in epitaxial Co(0001) layers

Erik Milosevic, Sit Kerdsongpanya, Mary E. McGahay, Amirali Zangiabadi, Katayun Barmak, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 245105 (2019)
https://doi.org/10.1063/1.5086458
Published: June 2019
View article titled, Resistivity scaling and electron surface scattering in epitaxial Co(0001) layers
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Journal Articles

Resistivity and surface scattering of (0001) single crystal ruthenium thin films

Sameer S. Ezzat, Prabhu Doss Mani, Asim Khaniya, William Kaden, Daniel Gall, Katayun Barmak, Kevin R. Coffey
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 031516 (2019)
https://doi.org/10.1116/1.5093494
Published: May 2019
View article titled, Resistivity and surface scattering of (0001) single crystal ruthenium thin films
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Journal Articles

Conductive surface oxide on CrN(001) layers

Mary E. McGahay, Daniel Gall
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 131602 (2019)
https://doi.org/10.1063/1.5091034
Published: April 2019
View article titled, Conductive surface oxide on CrN(001) layers
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Journal Articles

NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node

Linghan Chen, Daisuke Ando, Yuji Sutou, Daniel Gall, Junichi Koike
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 183503 (2018)
https://doi.org/10.1063/1.5049620
Published: October 2018
View article titled, NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node
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Journal Articles

Resistivity size effect in epitaxial Ru(0001) layers

Erik Milosevic, Sit Kerdsongpanya, Amirali Zangiabadi, Katayun Barmak, Kevin R. Coffey, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 165105 (2018)
https://doi.org/10.1063/1.5046430
Published: October 2018
View article titled, Resistivity size effect in epitaxial Ru(0001) layers
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Journal Articles

Growth and properties of epitaxial Ti1−xMgxN(001) layers

Baiwei Wang, Sit Kerdsongpanya, Mary E. McGahay, Erik Milosevic, Panos Patsalas, Daniel Gall
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 061501 (2018)
https://doi.org/10.1116/1.5049957
Published: September 2018
View article titled, Growth and properties of epitaxial Ti<sub>1−<em>x</em></sub>Mg<em><sub>x</sub></em>N(001) layers
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Journal Articles

A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects

Tianji Zhou, Nicholas A. Lanzillo, Prasad Bhosale, Daniel Gall, Roger Quon
Journal: AIP Advances
AIP Advances 8, 055127 (2018)
https://doi.org/10.1063/1.5027084
Published: May 2018
View article titled, A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects
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