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Journal Articles

Diindenoperylene thin-film structure on MoS₂ monolayer

N. Mrkyvkova, M. Hodas, J. Hagara, P. Nadazdy, Y. Halahovets, M. Bodik, K. Tokar, J. W. Chai, S. J. Wang, D. Z. Chi, A. Chumakov, O. Konovalov, A. Hinderhofer, M. Jergel, E. Majkova, P. Siffalovic, F. Schreiber

Appl. Phys. Lett. 114, 251906 (2019)

https://doi.org/10.1063/1.5100282

Published: June 2019

View articletitled, Diindenoperylene thin-film structure on MoS2 monolayer

Journal Articles

Band alignment of 2D WS₂/HfO₂ interfaces from x-ray photoelectron spectroscopy and first-principles calculations

H. L. Zhu, C. J. Zhou, B. S. Tang, W. F. Yang, J. W. Chai, W. L. Tay, H. Gong, J. S. Pan, W. D. Zou, S. J. Wang, D. Z. Chi

Appl. Phys. Lett. 112, 171604 (2018)

https://doi.org/10.1063/1.5022719

Published: April 2018

View articletitled, Band alignment of 2D WS2/HfO2 interfaces from x-ray photoelectron spectroscopy and first-principles calculations

Journal Articles

Integration of TaO_x-based resistive-switching element and GaAs diode

Z. Xu, X. Tong, S. F. Yoon, Y. C. Yeo, C. K. Chia, G. K. Dalapati, D. Z. Chi

APL Mater. 1, 032121 (2013)

https://doi.org/10.1063/1.4820421

Published: September 2013

View articletitled, Integration of TaOx-based resistive-switching element and GaAs diode

Journal Articles

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken, S. Tripathy

J. Appl. Phys. 113, 023510 (2013)

https://doi.org/10.1063/1.4774288

Published: January 2013

View articletitled, Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Journal Articles

Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

H. F. Liu, C. C. Tan, G. K. Dalapati, D. Z. Chi

J. Appl. Phys. 112, 063114 (2012)

https://doi.org/10.1063/1.4754319

Published: September 2012

View articletitled, Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

Journal Articles

Atomic layer deposited (TiO₂)_x(Al₂O₃)_1−x/In_0.53Ga_0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, E. Miranda

Appl. Phys. Lett. 100, 062905 (2012)

https://doi.org/10.1063/1.3684803

Published: February 2012

View articletitled, Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Journal Articles

Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

H. F. Liu, W. Liu, A. M. Yong, X. H. Zhang, S. J. Chua, D. Z. Chi

J. Appl. Phys. 110, 063505 (2011)

https://doi.org/10.1063/1.3638703

Published: September 2011

View articletitled, Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

Journal Articles

Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi₂ thin films

H. F. Liu, A. Huang, D. Z. Chi

J. Appl. Phys. 109, 083538 (2011)

https://doi.org/10.1063/1.3573671

Published: April 2011

View articletitled, Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films

Journal Articles

Role of Al_xGa₁₋_xAs buffer layer in heterogeneous integration of GaAs/Ge

C. K. Chia, G. K. Dalapati, Y. Chai, S. L. Lu, W. He, J. R. Dong, D. H. L. Seng, H. K. Hui, A. S. W. Wong, A. J. Y. Lau, Y. B. Cheng, D. Z. Chi, Z. Zhu, Y. C. Yeo, Z. Xu, S. F. Yoon

J. Appl. Phys. 109, 066106 (2011)

https://doi.org/10.1063/1.3561489

Published: March 2011

View articletitled, Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge

Journal Articles

Photovoltaic characteristics of p- β -FeSi 2 ( Al ) / n-Si ( 100 ) heterojunction solar cells and the effects of interfacial engineering

G. K. Dalapati, S. L. Liew, A. S. W. Wong, Y. Chai, S. Y. Chiam, D. Z. Chi

Appl. Phys. Lett. 98, 013507 (2011)

https://doi.org/10.1063/1.3536523

Published: January 2011

View articletitled, Photovoltaic characteristics of p- β -FeSi 2 ( Al ) / n-Si ( 100 ) heterojunction solar cells and the effects of interfacial engineering

Journal Articles

Effects of boron and arsenic doping in β -FeSi 2

K. H. Tan, K. L. Pey, D. Z. Chi

J. Appl. Phys. 106, 023712 (2009)

https://doi.org/10.1063/1.3176944

Published: July 2009

View articletitled, Effects of boron and arsenic doping in β -FeSi 2

Journal Articles

HfO x N y gate dielectric on p -GaAs

G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, D. Z. Chi

Appl. Phys. Lett. 94, 073502 (2009)

https://doi.org/10.1063/1.3079409

Published: February 2009

View articletitled, HfO x N y gate dielectric on p -GaAs

Journal Articles

Optical and electrical characterization of sputter-deposited FeSi 2 and its evolution with annealing temperature

K. H. Tan, D. Z. Chi, K. L. Pey

J. Appl. Phys. 104, 064117 (2008)

https://doi.org/10.1063/1.2981198

Published: September 2008

View articletitled, Optical and electrical characterization of sputter-deposited FeSi 2 and its evolution with annealing temperature

Journal Articles

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

H. J. Oh, J. Q. Lin, S. J. Lee, G. K. Dalapati, A. Sridhara, D. Z. Chi, S. J. Chua, G. Q. Lo, D. L. Kwong

Appl. Phys. Lett. 93, 062107 (2008)

https://doi.org/10.1063/1.2968293

Published: August 2008

View articletitled, Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

Journal Articles

Effects of AlAs interfacial layer on material and optical properties of Ga As ∕ Ge ( 100 ) epitaxy

C. K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A. S. W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, S. J. Lee

Appl. Phys. Lett. 92, 141905 (2008)

https://doi.org/10.1063/1.2908042

Published: April 2008

View articletitled, Effects of AlAs interfacial layer on material and optical properties of Ga As ∕ Ge ( 100 ) epitaxy

Journal Articles

GaAs metal-oxide-semiconductor device with Hf O 2 ∕ Ta N gate stack and thermal nitridation surface passivation

Fei Gao, S. J. Lee, D. Z. Chi, S. Balakumar, D.-L. Kwong

Appl. Phys. Lett. 90, 252904 (2007)

https://doi.org/10.1063/1.2749840

Published: June 2007

View articletitled, GaAs metal-oxide-semiconductor device with Hf O 2 ∕ Ta N gate stack and thermal nitridation surface passivation

Journal Articles

Effect of the inversion layer on the electrical characterization of Pt germanide/ n - Ge ( 001 ) Schottky contacts

H. B. Yao, D. Z. Chi, R. Li, S. J. Lee, D.-L. Kwong

Appl. Phys. Lett. 89, 242117 (2006)

https://doi.org/10.1063/1.2408665

Published: December 2006

View articletitled, Effect of the inversion layer on the electrical characterization of Pt germanide/ n - Ge ( 001 ) Schottky contacts

Journal Articles

Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

H. P. Yu, K. L. Pey, W. K. Choi, D. A. Antoniadis, E. A. Fitzgerald, D. Z. Chi, C. H. Tung

Appl. Phys. Lett. 89, 233520 (2006)

https://doi.org/10.1063/1.2402943

Published: December 2006

View articletitled, Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

Journal Articles

Texture of NiGe on Ge(001) and its evolution with formation temperature

B. Balakrisnan, C. C. Tan, S. L. Liew, P. C. Lim, G. K. L. Goh, Y. L. Foo, D. Z. Chi

Appl. Phys. Lett. 87, 241922 (2005)

https://doi.org/10.1063/1.2135210

Published: December 2005

View articletitled, Texture of NiGe on Ge(001) and its evolution with formation temperature

Journal Articles

Influence of composition pulling effect on the two-dimensional electron gas formed at Al y In x Ga 1 − x − y N ∕ Ga N interface

C. B. Soh, S. J. Chua, S. Tripathy, S. Y. Chow, D. Z. Chi, W. Liu

J. Appl. Phys. 98, 103704 (2005)

https://doi.org/10.1063/1.2132090

Published: November 2005

View articletitled, Influence of composition pulling effect on the two-dimensional electron gas formed at Al y In x Ga 1 − x − y N ∕ Ga N interface

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Diindenoperylene thin-film structure on MoS₂ monolayer

Band alignment of 2D WS₂/HfO₂ interfaces from x-ray photoelectron spectroscopy and first-principles calculations

Integration of TaO_x-based resistive-switching element and GaAs diode

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

Atomic layer deposited (TiO₂)_x(Al₂O₃)_1−x/In_0.53Ga_0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi₂ thin films

Role of Al_xGa₁₋_xAs buffer layer in heterogeneous integration of GaAs/Ge

Photovoltaic characteristics of p- β -FeSi 2 ( Al ) / n-Si ( 100 ) heterojunction solar cells and the effects of interfacial engineering

Effects of boron and arsenic doping in β -FeSi 2

HfO x N y gate dielectric on p -GaAs

Optical and electrical characterization of sputter-deposited FeSi 2 and its evolution with annealing temperature

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

Effects of AlAs interfacial layer on material and optical properties of Ga As ∕ Ge ( 100 ) epitaxy

GaAs metal-oxide-semiconductor device with Hf O 2 ∕ Ta N gate stack and thermal nitridation surface passivation

Effect of the inversion layer on the electrical characterization of Pt germanide/ n - Ge ( 001 ) Schottky contacts

Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

Texture of NiGe on Ge(001) and its evolution with formation temperature

Influence of composition pulling effect on the two-dimensional electron gas formed at Al y In x Ga 1 − x − y N ∕ Ga N interface

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