Page 1 | Search Results | AIP Publishing

1-19 of 19

Sort by

Sort Order Select

Journal Articles

Nucleation control of high crystal quality heteroepitaxial Sc_0.4Al_0.6N grown by molecular beam epitaxy

Matthew T. Hardy, Andrew C. Lang, Eric N. Jin, Neeraj Nepal, Brian P. Downey, Vikrant J. Gokhale, D. Scott Katzer, Virginia D. Wheeler

J. Appl. Phys. 134, 105301 (2023)

https://doi.org/10.1063/5.0164430

Published: September 2023

View article titled, Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy

Journal Articles

Impact of surface preparation on the epitaxial growth of SrTiO₃ on ScAlN/GaN heterostructures

Eric N. Jin, Andrew C. Lang, Brian P. Downey, Vikrant J. Gokhale, Matthew T. Hardy, Neeraj Nepal, D. Scott Katzer, Virginia D. Wheeler

J. Appl. Phys. 134, 025303 (2023)

https://doi.org/10.1063/5.0152694

Published: July 2023

View article titled, Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures

Includes: Supplementary data

Journal Articles

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer

J. Vac. Sci. Technol. A 41, 042706 (2023)

https://doi.org/10.1116/6.0002530

Published: June 2023

View article titled, Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Journal Articles

Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Diego Vaca, Matthew Barry, Luke Yates, Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia Wheeler, Luke Nyakiti, David J. Meyer, Samuel Graham, Satish Kumar

Appl. Phys. Lett. 121, 042107 (2022)

https://doi.org/10.1063/5.0098048

Published: July 2022

View article titled, Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Electrical properties of high permittivity epitaxial SrCaTiO₃ grown on AlGaN/GaN heterostructures

Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer

APL Mater. 9, 111101 (2021)

https://doi.org/10.1063/5.0063295

Published: November 2021

View article titled, Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Includes: Supplementary data

Journal Articles

Heteroepitaxial growth of β-Ga₂O₃ films on SiC via molecular beam epitaxy

Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia D. Wheeler, Luke O. Nyakiti, David F. Storm, Matthew T. Hardy, Jaime A. Freitas, Eric N. Jin, Diego Vaca, Luke Yates, Samuel Graham, Satish Kumar, David J. Meyer

J. Vac. Sci. Technol. A 38, 063406 (2020)

https://doi.org/10.1116/6.0000452

Published: October 2020

View article titled, Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

Journal Articles

Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer, David J. Meyer

Appl. Phys. Lett. 117, 124003 (2020)

https://doi.org/10.1063/5.0013848

Published: September 2020

View article titled, Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

Includes: Supplementary data

Journal Articles

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

David F. Storm, Tyler A. Growden, Evan M. Cornuelle, Prudhvi R. Peri, Thomas Osadchy, Jeffrey W. Daulton, Wei-Dong Zhang, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Richard Molnar, Elliott R. Brown, Paul R. Berger, David J. Smith, David J. Meyer

J. Vac. Sci. Technol. B 38, 032214 (2020)

https://doi.org/10.1116/6.0000052

Published: May 2020

View article titled, Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

Journal Articles

RF-plasma MBE growth of epitaxial metallic TaN_x transition metal nitride films on SiC

D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, Brian P. Downey, David F. Storm, Eric N. Jin, David J. Meyer

J. Vac. Sci. Technol. B 37, 031211 (2019)

https://doi.org/10.1116/1.5089779

Published: April 2019

View article titled, RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC

Journal Articles

XeF₂ etching of epitaxial Nb₂N for lift-off or micromachining of III-N materials and devices

Brian P. Downey, D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, David J. Meyer

J. Vac. Sci. Technol. A 35, 05C312 (2017)

https://doi.org/10.1116/1.4994400

Published: July 2017

View article titled, XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

Journal Articles

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Matthew T. Hardy, Brian P. Downey, Neeraj Nepal, David F. Storm, D. Scott Katzer, David J. Meyer

Appl. Phys. Lett. 110, 162104 (2017)

https://doi.org/10.1063/1.4981807

Published: April 2017

View article titled, Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Journal Articles

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

David F. Storm, Thomas O. McConkie, Matthew T. Hardy, D. Scott Katzer, Neeraj Nepal, David J. Meyer, David J. Smith

J. Vac. Sci. Technol. B 35, 02B109 (2017)

https://doi.org/10.1116/1.4977777

Published: March 2017

View article titled, Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

Journal Articles

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm, Tyler A. Growden, Weidong Zhang, Elliott R. Brown, Neeraj Nepal, D. Scott Katzer, Matthew T. Hardy, Paul R. Berger, David J. Meyer

J. Vac. Sci. Technol. B 35, 02B110 (2017)

https://doi.org/10.1116/1.4977779

Published: March 2017

View article titled, AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Journal Articles

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

David A. Deen, Ross A. Miller, Andrei V. Osinsky, Brian P. Downey, David F. Storm, David J. Meyer, D. Scott Katzer, Neeraj Nepal

J. Appl. Phys. 120, 235704 (2016)

https://doi.org/10.1063/1.4972225

Published: December 2016

View article titled, Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Journal Articles

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

David A. Deen, David F. Storm, D. Scott Katzer, R. Bass, David J. Meyer

Appl. Phys. Lett. 109, 063504 (2016)

https://doi.org/10.1063/1.4961009

Published: August 2016

View article titled, Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Journal Articles

Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Matthew T. Hardy, Thomas O. McConkie, David J. Smith, David F. Storm, Brian P. Downey, D. Scott Katzer, David J. Meyer, Neeraj Nepal

J. Vac. Sci. Technol. A 34, 021512 (2016)

https://doi.org/10.1116/1.4940759

Published: January 2016

View article titled, Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Journal Articles

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Matthew T. Hardy, David F. Storm, Brian P. Downey, D. Scott Katzer, David J. Meyer, Thomas O. McConkie, David J. Smith

J. Vac. Sci. Technol. B 33, 061207 (2015)

https://doi.org/10.1116/1.4935130

Published: November 2015

View article titled, Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Journal Articles

Silicon nitride thin films deposited using electron-beam evaporation in an RF plasma MBE system

D. Scott Katzer, David J. Meyer, David F. Storm, Neeraj Nepal, Virginia D. Wheeler

J. Vac. Sci. Technol. B 32, 02C117 (2014)

https://doi.org/10.1116/1.4867435

Published: March 2014

View article titled, Silicon nitride thin films deposited using electron-beam evaporation in an RF plasma MBE system

Journal Articles

Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication

Brian P. Downey, David J. Meyer, Robert Bass, D. Scott Katzer, Steven C. Binari

J. Vac. Sci. Technol. B 30, 051603 (2012)

https://doi.org/10.1116/1.4740502

Published: August 2012

View article titled, Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication

NARROW

Topics

Nucleation control of high crystal quality heteroepitaxial Sc_0.4Al_0.6N grown by molecular beam epitaxy

Impact of surface preparation on the epitaxial growth of SrTiO₃ on ScAlN/GaN heterostructures

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Electrical properties of high permittivity epitaxial SrCaTiO₃ grown on AlGaN/GaN heterostructures

Heteroepitaxial growth of β-Ga₂O₃ films on SiC via molecular beam epitaxy

Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

RF-plasma MBE growth of epitaxial metallic TaN_x transition metal nitride films on SiC

XeF₂ etching of epitaxial Nb₂N for lift-off or micromachining of III-N materials and devices

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Silicon nitride thin films deposited using electron-beam evaporation in an RF plasma MBE system

Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only