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Journal Articles

Epitaxial growth of SrCaTiO₃ films on GaN by molecular beam epitaxy with a TiO₂ buffer layer

E. N. Jin, A. C. Lang, M. T. Hardy, N. Nepal, D. S. Katzer, D. F. Storm, B. P. Downey, D. J. Meyer

J. Appl. Phys. 127, 214104 (2020)

https://doi.org/10.1063/5.0007144

Published: June 2020

View article titled, Epitaxial growth of SrCaTiO<sub>3</sub> films on GaN by molecular beam epitaxy with a TiO<sub>2</sub> buffer layer

Includes: Supplementary data

Journal Articles

Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling

D. F. Storm, D. S. Katzer, D. J. Meyer, S. C. Binari

J. Appl. Phys. 112, 013507 (2012)

https://doi.org/10.1063/1.4732457

Published: July 2012

View article titled, Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling

Journal Articles

Ultra-high vacuum deposition and characterization of silicon nitride thin films

D. S. Katzer, D. J. Meyer, D. F. Storm, J. A. Mittereder, V. M. Bermudez, S. F. Cheng, G. G. Jernigan, S. C. Binari

J. Vac. Sci. Technol. B 30, 02B129 (2012)

https://doi.org/10.1116/1.3675835

Published: March 2012

View article titled, Ultra-high vacuum deposition and characterization of silicon nitride thin films

Journal Articles

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

D. F. Storm, D. J. Meyer, D. S. Katzer, S. C. Binari, Tanya Paskova, E. A. Preble, K. R. Evans, Lin Zhou, David J. Smith

J. Vac. Sci. Technol. B 30, 02B113 (2012)

https://doi.org/10.1116/1.3676175

Published: January 2012

View article titled, Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Journal Articles

Atomic layer deposited Ta 2 O 5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

D. A. Deen, D. F. Storm, R. Bass, D. J. Meyer, D. S. Katzer, S. C. Binari, J. W. Lacis, T. Gougousi

Appl. Phys. Lett. 98, 023506 (2011)

https://doi.org/10.1063/1.3531551

Published: January 2011

View article titled, Atomic layer deposited Ta 2 O 5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Journal Articles

Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Lin Zhou, David J. Smith, Martha R. McCartney, D. S. Katzer, D. F. Storm

Appl. Phys. Lett. 90, 081917 (2007)

https://doi.org/10.1063/1.2696206

Published: February 2007

View article titled, Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Journal Articles

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Lin Zhou, David J. Smith, D. F. Storm, D. S. Katzer, S. C. Binari, B. V. Shanabrook

Appl. Phys. Lett. 88, 011916 (2006)

https://doi.org/10.1063/1.2162670

Published: January 2006

View article titled, Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Journal Articles

Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductors

D. S. Katzer, D. F. Storm, S. C. Binari, R. T. Holm, R. Mahon, M. J. Yang, J. A. Freitas, Jr.

J. Vac. Sci. Technol. B 23, 1252–1256 (2005)

https://doi.org/10.1116/1.1924469

Published: June 2005

View article titled, Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductors

Journal Articles

Molecular beam epitaxy of In Al N ∕ Ga N heterostructures for high electron mobility transistors

D. S. Katzer, D. F. Storm, S. C. Binari, B. V. Shanabrook, A. Torabi, Lin Zhou, David J. Smith

J. Vac. Sci. Technol. B 23, 1204–1208 (2005)

https://doi.org/10.1116/1.1927103

Published: June 2005

View article titled, Molecular beam epitaxy of In Al N ∕ Ga N heterostructures for high electron mobility transistors

Journal Articles

Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

D. F. Storm, D. S. Katzer, J. A. Mittereder, S. C. Binari, B. V. Shanabrook, Lin Zhou, David J. Smith, X. Xu, D. McVey, R. P. Vaudo, G. R. Brandes

J. Vac. Sci. Technol. B 23, 1190–1193 (2005)

https://doi.org/10.1116/1.1885013

Published: June 2005

View article titled, Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

Journal Articles

Strain relaxation, band-structure deformation, and optical absorption in free-hanging quantum-well microstructures

T. H. Stievater, W. S. Rabinovich, D. Park, Peter G. Goetz, J. B. Boos, D. S. Katzer, M. L. Biermann, S. Kanakaraju, L. C. Calhoun

J. Appl. Phys. 97, 114326 (2005)

https://doi.org/10.1063/1.1906287

Published: June 2005

View article titled, Strain relaxation, band-structure deformation, and optical absorption in free-hanging quantum-well microstructures

Journal Articles

Using local band structure to image strain in semiconductor microstructures

T. H. Stievater, W. S. Rabinovich, D. Park, Peter G. Goetz, J. B. Boos, D. S. Katzer, M. L. Biermann

Appl. Phys. Lett. 86, 111915 (2005)

https://doi.org/10.1063/1.1885181

Published: March 2005

View article titled, Using local band structure to image strain in semiconductor microstructures

Journal Articles

Effect of Al ∕ N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown Al Ga N ∕ Ga N heterostructures

D. F. Storm, D. S. Katzer, S. C. Binari, B. V. Shanabrook, Lin Zhou, David J. Smith

Appl. Phys. Lett. 85, 3786–3788 (2004)

https://doi.org/10.1063/1.1808496

Published: October 2004

View article titled, Effect of Al ∕ N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown Al Ga N ∕ Ga N heterostructures

Journal Articles

Coherent nonlinear optical spectroscopy of single quantum dot excited states

E. T. Batteh, Jun Cheng, Gang Chen, D. G. Steel, D. Gammon, D. S. Katzer, D. Park

Appl. Phys. Lett. 84, 1928–1930 (2004)

https://doi.org/10.1063/1.1667280

Published: March 2004

View article titled, Coherent nonlinear optical spectroscopy of single quantum dot excited states

Journal Articles

Laterally patterned band structure in micromachined semiconductors

T. H. Stievater, W. S. Rabinovich, J. B. Boos, D. S. Katzer, M. L. Biermann

Appl. Phys. Lett. 83, 4933–4935 (2003)

https://doi.org/10.1063/1.1633671

Published: December 2003

View article titled, Laterally patterned band structure in micromachined semiconductors

Journal Articles

Demonstration of a microelectromechanical tunable asymmetric Fabry–Pérot quantum well modulator

W. S. Rabinovich, T. H. Stievater, N. A. Papanicolaou, D. S. Katzer, P. G. Goetz

Appl. Phys. Lett. 83, 1923–1925 (2003)

https://doi.org/10.1063/1.1606499

Published: September 2003

View article titled, Demonstration of a microelectromechanical tunable asymmetric Fabry–Pérot quantum well modulator

Journal Articles

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

J. A. Mittereder, S. C. Binari, P. B. Klein, J. A. Roussos, D. S. Katzer, D. F. Storm, D. D. Koleske, A. E. Wickenden, R. L. Henry

Appl. Phys. Lett. 83, 1650–1652 (2003)

https://doi.org/10.1063/1.1604472

Published: August 2003

View article titled, Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Journal Articles

Measurement of relaxation between polarization eigenstates in single quantum dots

T. H. Stievater, Xiaoqin Li, T. Cubel, D. G. Steel, D. Gammon, D. S. Katzer, D. Park

Appl. Phys. Lett. 81, 4251–4253 (2002)

https://doi.org/10.1063/1.1526912

Published: November 2002

View article titled, Measurement of relaxation between polarization eigenstates in single quantum dots

Journal Articles

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

D. F. Storm, D. S. Katzer, S. C. Binari, E. R. Glaser, B. V. Shanabrook, J. A. Roussos

Appl. Phys. Lett. 81, 3819–3821 (2002)

https://doi.org/10.1063/1.1522133

Published: November 2002

View article titled, Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

Journal Articles

Wavelength modulation spectroscopy of single quantum dots

T. H. Stievater, Xiaoqin Li, J. R. Guest, D. G. Steel, D. Gammon, D. S. Katzer, D. Park

Appl. Phys. Lett. 80, 1876–1878 (2002)

https://doi.org/10.1063/1.1461071

Published: March 2002

View article titled, Wavelength modulation spectroscopy of single quantum dots

NARROW

Topics

Epitaxial growth of SrCaTiO₃ films on GaN by molecular beam epitaxy with a TiO₂ buffer layer

Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling

Ultra-high vacuum deposition and characterization of silicon nitride thin films

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Atomic layer deposited Ta 2 O 5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductors

Molecular beam epitaxy of In Al N ∕ Ga N heterostructures for high electron mobility transistors

Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

Strain relaxation, band-structure deformation, and optical absorption in free-hanging quantum-well microstructures

Using local band structure to image strain in semiconductor microstructures

Effect of Al ∕ N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown Al Ga N ∕ Ga N heterostructures

Coherent nonlinear optical spectroscopy of single quantum dot excited states

Laterally patterned band structure in micromachined semiconductors

Demonstration of a microelectromechanical tunable asymmetric Fabry–Pérot quantum well modulator

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Measurement of relaxation between polarization eigenstates in single quantum dots

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

Wavelength modulation spectroscopy of single quantum dots

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