Page 1 | Search Results | AIP Publishing

1-20 of 60

Sort by

Sort Order Select

Journal Articles

Deep levels induced optical memory effect in thin InGaN film

B. B. Wang, J. J. Zhu, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, W. Liu, F. Liang, S. T. Liu, Y. Xing, L. Q. Zhang, M. Li

AIP Advances 8, 085222 (2018)

https://doi.org/10.1063/1.5045811

Published: August 2018

View articletitled, Deep levels induced optical memory effect in thin InGaN film

Journal Articles

Resistivity reduction of low temperature grown p-Al_0.09Ga_0.91N by suppressing the incorporation of carbon impurity

F. Liang, Jing Yang, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, P. Chen, S. T. Liu, Y. Xing, L. Q. Zhang, W. J. Wang, Mo Li, Y. T. Zhang, G. T. Du

AIP Advances 8, 085005 (2018)

https://doi.org/10.1063/1.5046875

Published: August 2018

View articletitled, Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Journal Articles

Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

P. Chen, D. G. Zhao, D. S. Jiang, H. Long, M. Li, J. Yang, J. J. Zhu, Z. S. Liu, X. J. Li, W. Liu, X. Li, F. Liang, J. P. Liu, B. S. Zhang, H. Yang

AIP Advances 7, 035103 (2017)

https://doi.org/10.1063/1.4978215

Published: March 2017

View articletitled, Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

Journal Articles

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

P. Chen, D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, J. Yang, X. Li, L. C. Le, X. G. He, W. Liu, X. J. Li, F. Liang, B. S. Zhang, H. Yang, Y. T. Zhang, G. T. Du

AIP Advances 6, 035124 (2016)

https://doi.org/10.1063/1.4945015

Published: March 2016

View articletitled, The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Journal Articles

Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, L. Q. Zhang, H. Yang

J. Vac. Sci. Technol. B 34, 011206 (2016)

https://doi.org/10.1116/1.4937265

Published: December 2015

View articletitled, Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

Journal Articles

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, H. Yang, Y. T. Zhang, G. T. Du

J. Appl. Phys. 117, 055709 (2015)

https://doi.org/10.1063/1.4907670

Published: February 2015

View articletitled, Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

Journal Articles

Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure

P. Y. Zhou, X. F. Wu, K. Ding, X. M. Dou, G. W. Zha, H. Q. Ni, Z. C. Niu, H. J. Zhu, D. S. Jiang, C. L. Zhao, B. Q. Sun

J. Appl. Phys. 117, 014304 (2015)

https://doi.org/10.1063/1.4905246

Published: January 2015

View articletitled, Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure

Journal Articles

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

X. J. Li, D. G. Zhao, D. S. Jiang, Z. S. Liu, P. Chen, J. J. Zhu, L. C. Le, J. Yang, X. G. He, S. M. Zhang, B. S. Zhang, J. P. Liu, H. Yang

J. Appl. Phys. 116, 163708 (2014)

https://doi.org/10.1063/1.4900729

Published: October 2014

View articletitled, The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

Journal Articles

Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

P. Y. Zhou, X. M. Dou, X. F. Wu, K. Ding, S. Luo, T. Yang, H. J. Zhu, D. S. Jiang, B. Q. Sun

J. Appl. Phys. 116, 023510 (2014)

https://doi.org/10.1063/1.4890013

Published: July 2014

View articletitled, Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

Journal Articles

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, S. M. Zhang, H. Wang, J. J. Zhu, H. Yang

J. Appl. Phys. 115, 163704 (2014)

https://doi.org/10.1063/1.4873957

Published: April 2014

View articletitled, Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Journal Articles

Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films

H. Y. Wang, X. M. Dou, Sh. Yang, D. Su, D. S. Jiang, H. Q. Ni, Z. C. Niu, B. Q. Sun

J. Appl. Phys. 115, 123104 (2014)

https://doi.org/10.1063/1.4869739

Published: March 2014

View articletitled, Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films

Journal Articles

Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

L. C. Le, D. G. Zhao, D. S. Jiang, L. Li, L. L. Wu, P. Chen, Z. S. Liu, J. Yang, X. J. Li, X. G. He, J. J. Zhu, H. Wang, S. M. Zhang, H. Yang

J. Appl. Phys. 114, 143706 (2013)

https://doi.org/10.1063/1.4824801

Published: October 2013

View articletitled, Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Journal Articles

Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, H. Yang

J. Appl. Phys. 114, 093105 (2013)

https://doi.org/10.1063/1.4820935

Published: September 2013

View articletitled, Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

Journal Articles

High efficient GaN-based laser diodes with tunnel junction

M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang

Appl. Phys. Lett. 103, 043508 (2013)

https://doi.org/10.1063/1.4816598

Published: July 2013

View articletitled, High efficient GaN-based laser diodes with tunnel junction

Journal Articles

Saturation of the junction voltage in GaN-based laser diodes

M. X. Feng, J. P. Liu, S. M. Zhang, Z. S. Liu, D. S. Jiang, Z. C. Li, F. Wang, D. Y. Li, L. Q. Zhang, H. Wang, H. Yang

Appl. Phys. Lett. 102, 183509 (2013)

https://doi.org/10.1063/1.4804384

Published: May 2013

View articletitled, Saturation of the junction voltage in GaN-based laser diodes

Journal Articles

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

L. C. Le, D. G. Zhao, D. S. Jiang, L. Li, L. L. Wu, P. Chen, Z. S. Liu, Z. C. Li, Y. M. Fan, J. J. Zhu, H. Wang, S. M. Zhang, H. Yang

Appl. Phys. Lett. 101, 252110 (2012)

https://doi.org/10.1063/1.4772548

Published: December 2012

View articletitled, Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Journal Articles

Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

P. Chen, M. X. Feng, D. S. Jiang, D. G. Zhao, Z. S. Liu, L. Li, L. L. Wu, L. C. Le, J. J. Zhu, H. Wang, S. M. Zhang, H. Yang

J. Appl. Phys. 112, 113105 (2012)

https://doi.org/10.1063/1.4768287

Published: December 2012

View articletitled, Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

Journal Articles

Effect of light Si-doping on the near-band-edge emissions in high quality GaN

L. C. Le, D. G. Zhao, D. S. Jiang, L. L. Wu, L. Li, P. Chen, Z. S. Liu, J. J. Zhu, H. Wang, S. M. Zhang, H. Yang

J. Appl. Phys. 112, 053104 (2012)

https://doi.org/10.1063/1.4750043

Published: September 2012

View articletitled, Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Journal Articles

Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

W. He, S. L. Lu, D. S. Jiang, J. R. Dong, A. Tackeuchi, H. Yang

J. Appl. Phys. 112, 023509 (2012)

https://doi.org/10.1063/1.4737611

Published: July 2012

View articletitled, Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

Journal Articles

Thermal characterization of GaN-based laser diodes by forward-voltage method

M. X. Feng, S. M. Zhang, D. S. Jiang, J. P. Liu, H. Wang, C. Zeng, Z. C. Li, H. B. Wang, F. Wang, H. Yang

J. Appl. Phys. 111, 094513 (2012)

https://doi.org/10.1063/1.4716003

Published: May 2012

View articletitled, Thermal characterization of GaN-based laser diodes by forward-voltage method

Update search

NARROW

Format

Topics

Journal

Article Type

Issue Section

Date

Availability

Deep levels induced optical memory effect in thin InGaN film

Resistivity reduction of low temperature grown p-Al_0.09Ga_0.91N by suppressing the incorporation of carbon impurity

Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films

Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

High efficient GaN-based laser diodes with tunnel junction

Saturation of the junction voltage in GaN-based laser diodes

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

Thermal characterization of GaN-based laser diodes by forward-voltage method

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only