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Journal Articles

Effects of channel dimensions on performance of a- InGaZnO 4 thin-film transistors

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Young-Woo Heo, Kwang-Min Cho, Sang-Yun Sun, Se-Yun Kim, Joon-Hyung Lee, Jeong-Joo Kim, D. P. Norton, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 021203 (2011)
https://doi.org/10.1116/1.3556921
Published: February 2011
View articletitled, Effects of channel dimensions on performance of a- InGaZnO 4 thin-film transistors
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Journal Articles

Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors

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Ki Chang Lee, Kwang-Min Jo, Sang-Yun Sung, Joon-Hyung Lee, Jeong-Joo Kim, Byoung-Seong Jeong, S. J. Pearton, D. P. Norton, Young-Woo Heo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 021008 (2011)
https://doi.org/10.1116/1.3553205
Published: February 2011
View articletitled, Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors
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Journal Articles

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

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Sang-Yun Sung, Se-Yun Kim, Kwang-Min Jo, Joon-Hyung Lee, Jeong-Joo Kim, Sang-Gon Kim, Kyoung-Hoon Chai, S. J. Pearton, D. P. Norton, Young-Woo Heo
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 222109 (2010)
https://doi.org/10.1063/1.3521310
Published: November 2010
View articletitled, Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature
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Journal Articles

Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates

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R. Khanna, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, L43–L46 (2010)
https://doi.org/10.1116/1.3467507
Published: August 2010
View articletitled, Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates
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Journal Articles

Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide

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SeonHoo Kim, J. A. Cianfrone, P. Sadik, K.-W. Kim, M. Ivill, D. P. Norton
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103538 (2010)
https://doi.org/10.1063/1.3415543
Published: May 2010
View articletitled, Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide
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Journal Articles

Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

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Yu-Lin Wang, C. Y. Chang, Wantae Lim, S. J. Pearton, D. P. Norton, B. H. Chu, C. F. Lo, F. Ren, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 376–379 (2010)
https://doi.org/10.1116/1.3368467
Published: March 2010
View articletitled, Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors
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Journal Articles

Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

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Sang-Yun Sung, Jun Hyuk Choi, Un Bin Han, Ki Chang Lee, Joon-Hyung Lee, Jeong-Joo Kim, Wantae Lim, S. J. Pearton, D. P. Norton, Young-Woo Heo
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 102107 (2010)
https://doi.org/10.1063/1.3357431
Published: March 2010
View articletitled, Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
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Journal Articles

Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

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Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young-Woo Heo, S. Y. Son, J. H. Yuh
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 053510 (2010)
https://doi.org/10.1063/1.3309753
Published: February 2010
View articletitled, Low-voltage indium gallium zinc oxide thin film transistors on paper substrates
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Journal Articles

Improvement in bias stability of amorphous- In Ga Zn O 4 thin film transistors with Si O x passivation layers

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Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young-Woo Heo, S. Y. Son, J. H. Yuh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 116–119 (2010)
https://doi.org/10.1116/1.3276774
Published: January 2010
View articletitled, Improvement in bias stability of amorphous- In Ga Zn O 4 thin film transistors with Si O x passivation layers
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Journal Articles

Transparent dual-gate InGaZnO thin film transistors: OR gate operation

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Wantae Lim, E. A. Douglas, Jaewon Lee, Junghun Jang, V. Craciun, D. P. Norton, S. J. Pearton, F. Ren, S. Y. Son, J. H. Yuh, H. Shen, W. Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 2128–2131 (2009)
https://doi.org/10.1116/1.3196787
Published: August 2009
View articletitled, Transparent dual-gate InGaZnO thin film transistors: OR gate operation
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Journal Articles

High mobility InGaZnO 4 thin-film transistors on paper

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Wantae Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, W. H. Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 072103 (2009)
https://doi.org/10.1063/1.3086394
Published: February 2009
View articletitled, High mobility InGaZnO 4 thin-film transistors on paper
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Journal Articles

Interface dependent electrical properties of amorphous In Ga Zn O 4 thin film transistors

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Wantae Lim, Jung Hun Jang, S.-H. Kim, D. P. Norton, V. Craciun, S. J. Pearton, F. Ren, H. Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 126–129 (2009)
https://doi.org/10.1116/1.3058717
Published: January 2009
View articletitled, Interface dependent electrical properties of amorphous In Ga Zn O 4 thin film transistors
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Journal Articles

Low-temperature-fabricated InGaZnO 4 thin film transistors on polyimide clean-room tape

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Wantae Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, W. H. Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 252103 (2008)
https://doi.org/10.1063/1.3054167
Published: December 2008
View articletitled, Low-temperature-fabricated InGaZnO 4 thin film transistors on polyimide clean-room tape
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Journal Articles

Comparative study of ZrN and Zr–Ge–N thin films as diffusion barriers for Cu metallization on Si

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L. C. Leu, P. Sadik, D. P. Norton, L. McElwee-White, T. J. Anderson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1723–1727 (2008)
https://doi.org/10.1116/1.2976571
Published: September 2008
View articletitled, Comparative study of ZrN and Zr–Ge–N thin films as diffusion barriers for Cu metallization on Si
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Journal Articles

High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

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Wantae Lim, Jung Hun Jang, S.-H. Kim, D. P. Norton, V Craciun, S. J. Pearton, F. Ren, H. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 082102 (2008)
https://doi.org/10.1063/1.2975959
Published: August 2008
View articletitled, High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
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Journal Articles

Effects of hydrogen on the optical properties of Zn Cd O ∕ Zn O quantum wells grown by molecular beam epitaxy

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I. A. Buyanova, X. J. Wang, G. Pozina, W. M. Chen, W. Lim, D. P. Norton, S. J. Pearton, A. Osinsky, J. W. Dong, B. Hertog
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 261912 (2008)
https://doi.org/10.1063/1.2953178
Published: July 2008
View articletitled, Effects of hydrogen on the optical properties of Zn Cd O ∕ Zn O quantum wells grown by molecular beam epitaxy
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Journal Articles

Stable room temperature deposited amorphous In Ga Zn O 4 thin film transistors

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Wantae Lim, S.-H. Kim, Yu-Lin Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 959–962 (2008)
https://doi.org/10.1116/1.2917075
Published: May 2008
View articletitled, Stable room temperature deposited amorphous In Ga Zn O 4 thin film transistors
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Journal Articles

Dependence of Zn 1 − x Mg x O : P film properties on magnesium concentration

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H. S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, F. Ren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 968–972 (2008)
https://doi.org/10.1116/1.2917079
Published: May 2008
View articletitled, Dependence of Zn 1 − x Mg x O : P film properties on magnesium concentration
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Journal Articles

Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition

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A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. I. Belogorokhov, H. S. Kim, D. P. Norton, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 083704 (2008)
https://doi.org/10.1063/1.2906180
Published: April 2008
View articletitled, Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition
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Journal Articles

Carrier concentration dependence of Ti ∕ Au specific contact resistance on n -type amorphous indium zinc oxide thin films

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Wantae Lim, D. P. Norton, Jung Hun Jang, V. Craciun, S. J. Pearton, F. Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 122102 (2008)
https://doi.org/10.1063/1.2902322
Published: March 2008
View articletitled, Carrier concentration dependence of Ti ∕ Au specific contact resistance on n -type amorphous indium zinc oxide thin films
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