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D. L. Huffaker
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Journal Articles

Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

D. C. M. Kwan, M. Kesaria, E. A. Anyebe, D. O. Alshahrani, M. Delmas, B. L. Liang, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 203102 (2021)
https://doi.org/10.1063/5.0045703
Published: May 2021
View article titled, Optical and structural investigation of a 10 <em>μ</em>m InAs/GaSb type-II superlattice on GaAs
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Journal Articles

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

O. D. D. Couto, Jr., P. T. de Almeida, G. E. dos Santos, M. A. G. Balanta, H. F. Andriolo, J. A. Brum, M. J. S. P. Brasil, F. Iikawa, B. L. Liang, D. L. Huffaker
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 084305 (2016)
https://doi.org/10.1063/1.4961534
Published: August 2016
View article titled, Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures
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Journal Articles

High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

M. C. Debnath, T. D. Mishima, M. B. Santos, Y. Cheng, V. R. Whiteside, I. R. Sellers, K. Hossain, R. B. Laghumavarapu, B. L. Liang, D. L. Huffaker
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 114301 (2016)
https://doi.org/10.1063/1.4943631
Published: March 2016
View article titled, High-density InAs/GaAs<sub>1−</sub><sub><em>x</em></sub>Sb<sub><em>x</em></sub> quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
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Journal Articles

Ultrafast dynamics of type-II GaSb/GaAs quantum dots

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, J. Houlihan
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 031106 (2015)
https://doi.org/10.1063/1.4906106
Published: January 2015
View article titled, Ultrafast dynamics of type-II GaSb/GaAs quantum dots
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Journal Articles

Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

A. P. Craig, C. J. Reyner, A. R. J. Marshall, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 213502 (2014)
https://doi.org/10.1063/1.4879848
Published: May 2014
View article titled, Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays
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Journal Articles

Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate

J. M. Borrego, E. Brown, P. Greiff, D. L. Huffaker, R. B. Laghumavarapu, J. Kim, P. S. Dutta
Journal: Journal of Renewable and Sustainable Energy
J. Renewable Sustainable Energy 6, 011207 (2014)
https://doi.org/10.1063/1.4828368
Published: November 2013
View article titled, Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate
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Journal Articles

800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

T. Nowozin, L. Bonato, A. Högner, A. Wiengarten, D. Bimberg, Wei-Hsun Lin, Shih-Yen Lin, C. J. Reyner, Baolai L. Liang, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 052115 (2013)
https://doi.org/10.1063/1.4791678
Published: February 2013
View article titled, 800 meV localization energy in GaSb/GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As quantum dots
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Journal Articles

Enhanced InAs nanopillar electrical transport by in-situ passivation

A. Lin, J. N. Shapiro, A. C. Scofield, B. L. Liang, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 053115 (2013)
https://doi.org/10.1063/1.4791592
Published: February 2013
View article titled, Enhanced InAs nanopillar electrical transport by <em>in-situ</em> passivation
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Journal Articles

Composite axial/core-shell nanopillar light-emitting diodes at 1.3 μm

A. C. Scofield, A. Lin, J. N. Shapiro, P. N. Senanayake, G. Mariani, M. Haddad, B. L. Liang, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 053111 (2012)
https://doi.org/10.1063/1.4738997
Published: July 2012
View article titled, Composite axial/core-shell nanopillar light-emitting diodes at 1.3 <em>μ</em>m
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Journal Articles

Strong interband transitions in InAs quantum dots solar cell

Jiang Wu, Y. F. M. Makableh, R. Vasan, M. O. Manasreh, B. Liang, C. J. Reyner, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 051907 (2012)
https://doi.org/10.1063/1.3681360
Published: February 2012
View article titled, Strong interband transitions in InAs quantum dots solar cell
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Journal Articles

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

Yu. I. Mazur, V. G. Dorogan, G. J. Salamo, G. G. Tarasov, B. L. Liang, C. J. Reyner, K. Nunna, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 033102 (2012)
https://doi.org/10.1063/1.3676274
Published: January 2012
View article titled, Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures
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Journal Articles

Optical Properties of Strain‐balanced InAs / InAs 1‐ x Sb x Type‐II Superlattices

E. H. Steenbergen, Y. Huang, J.‐H. Ryou, R. D. Dupuis, K. Nunna, D. L. Huffaker, Y.‐H. Zhang
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1416, 122–125 (2011)
https://doi.org/10.1063/1.3671713
Published: December 2011
View article titled, Optical Properties of Strain‐balanced InAs / InAs 1‐ x Sb x Type‐II Superlattices
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Journal Articles

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction

Charles J. Reyner, Jin Wang, Kalyan Nunna, Andrew Lin, Baolai Liang, Mark S. Goorsky, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 231906 (2011)
https://doi.org/10.1063/1.3666234
Published: December 2011
View article titled, Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction
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Journal Articles

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

J. N. Shapiro, A. Lin, P. S. Wong, A. C. Scofield, C. Tu, P. N. Senanayake, G. Mariani, B. L. Liang, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 243102 (2010)
https://doi.org/10.1063/1.3526734
Published: December 2010
View article titled, InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy
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Journal Articles

1.52   μ m photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers

P. S. Wong, B. L. Liang, A. Lin, J. Tatebayashi, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 143111 (2010)
https://doi.org/10.1063/1.3499287
Published: October 2010
View article titled, 1.52   μ m photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers
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Journal Articles

Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon

J. Tatebayashi, A. Lin, P. S. Wong, R. F. Hick, D. L. Huffaker
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 034315 (2010)
https://doi.org/10.1063/1.3457355
Published: August 2010
View article titled, Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon
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Journal Articles

Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes

J. Tatebayashi, G. Mariani, A. Lin, R. F. Hicks, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 253101 (2010)
https://doi.org/10.1063/1.3455340
Published: June 2010
View article titled, Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes
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Journal Articles

Electronic characteristics of the interfacial states embedded in “buffer-free” GaSb/GaAs (001) heterojunctions

A. Jallipalli, K. Nunna, M. N. Kutty, G. Balakrishnan, L. R. Dawson, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 202107 (2009)
https://doi.org/10.1063/1.3266835
Published: November 2009
View article titled, Electronic characteristics of the interfacial states embedded in “buffer-free” GaSb/GaAs (001) heterojunctions
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Journal Articles

Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ -doping

A. Jallipalli, K. Nunna, M. N. Kutty, G. Balakrishnan, G. B. Lush, L. R. Dawson, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 072109 (2009)
https://doi.org/10.1063/1.3210783
Published: August 2009
View article titled, Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ -doping
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Journal Articles

Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, D. L. Huffaker
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 071102 (2008)
https://doi.org/10.1063/1.2970997
Published: August 2008
View article titled, Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
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