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D. J. Vitkavage
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Journal Articles

Bias voltage diagnostics during oxide etch in Drytek 384T

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S. C. McNevin, D. J. Vitkavage, C. N. Bredbenner
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 11, 1142–1144 (1993)
https://doi.org/10.1116/1.578455
Published: July 1993
View articletitled, Bias voltage diagnostics during oxide etch in Drytek 384T
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Journal Articles

Microscopic uniformity in plasma etching

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Richard A. Gottscho, C. W. Jurgensen, D. J. Vitkavage
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 10, 2133–2147 (1992)
https://doi.org/10.1116/1.586180
Published: September 1992
View articletitled, Microscopic uniformity in plasma etching
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Journal Articles

Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures

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S. V. Hattangady, G. G. Fountain, R. A. Rudder, M. J. Mantini, D. J. Vitkavage, R. J. Markunas
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 581–583 (1990)
https://doi.org/10.1063/1.104247
Published: August 1990
View articletitled, Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures
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Journal Articles

Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates

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J. B. Posthill, R. A. Rudder, S. V. Hattangady, G. G. Fountain, D. J. Vitkavage, R. J. Markunas, N. R. Parikh, N. Yu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 7, 1130–1135 (1989)
https://doi.org/10.1116/1.576241
Published: May 1989
View articletitled, Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates
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Journal Articles

Low temperature Si processing integrating surface preparation, homoepitaxial growth, and SiO2 deposition into an untrahigh vacuum compatible chamber

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G. G. Fountain, R. A. Rudder, S. V. Hattangady, D. J. Vitkavage, R. J. Markunas
Journal: AIP Conference Proceedings
AIP Conf. Proc. 167, 338–346 (1988)
https://doi.org/10.1063/1.37164
Published: September 1988
View articletitled, Low temperature Si processing integrating surface preparation, homoepitaxial growth, and SiO2 deposition into an untrahigh vacuum compatible chamber
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Journal Articles

Gating of germanium surfaces using pseudomorphic silicon interlayers

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D. J. Vitkavage, G. G. Fountain, R. A. Rudder, S. V. Hattangady, R. J. Markunas
Journal: Applied Physics Letters
Appl. Phys. Lett. 53, 692–694 (1988)
https://doi.org/10.1063/1.100642
Published: August 1988
View articletitled, Gating of germanium surfaces using pseudomorphic silicon interlayers
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Journal Articles

Ellipsometric and Rutherford backscattering characterization of low‐energy hydrogen‐, helium‐, neon‐, and argon‐bombarded silicon

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J. L. Buckner, D. J. Vitkavage, E. A. Irene
Journal: Journal of Applied Physics
J. Appl. Phys. 63, 5288–5294 (1988)
https://doi.org/10.1063/1.340392
Published: June 1988
View articletitled, Ellipsometric and Rutherford backscattering characterization of low‐energy hydrogen‐, helium‐, neon‐, and argon‐bombarded silicon
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Journal Articles

Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films

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D. J. Vitkavage, R. A. Rudder, G. G. Fountain, R. J. Markunas
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 6, 1812–1815 (1988)
https://doi.org/10.1116/1.575258
Published: May 1988
View articletitled, Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films
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Journal Articles

Target contamination by cathode sputtering in broad beam ion sources

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D. J. Vitkavage, T. M. Mayer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 6, 154–155 (1988)
https://doi.org/10.1116/1.574999
Published: January 1988
View articletitled, Target contamination by cathode sputtering in broad beam ion sources
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Journal Articles

Residue formation on Si surfaces in a CHF3 discharge environment

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D. J. Vitkavage, T. M. Mayer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 4, 1283–1291 (1986)
https://doi.org/10.1116/1.583507
Published: November 1986
View articletitled, Residue formation on Si surfaces in a CHF3 discharge environment
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Journal Articles

Doping reaction of PH3 and B2H6 with Si(100)

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Ming L. Yu, D. J. Vitkavage, B. S. Meyerson
Journal: Journal of Applied Physics
J. Appl. Phys. 59, 4032–4037 (1986)
https://doi.org/10.1063/1.336708
Published: June 1986
View articletitled, Doping reaction of PH3 and B2H6 with Si(100)
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Journal Articles

Summary Abstract: Ion‐enhanced processes in etching of silicon

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T. M. Mayer, M. S. Ameen, E. L. Barish, T. Mizutani, D. J. Vitkavage
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 3, 1373–1375 (1985)
https://doi.org/10.1116/1.582995
Published: September 1985
View articletitled, Summary Abstract: Ion‐enhanced processes in etching of silicon
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Journal Articles

Summary Abstract: The origin of oxidation induced enhancement of Si+ sputter yield in SIMS

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M. L. Yu, J. Clabes, D. J. Vitkavage
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 3, 1316–1317 (1985)
https://doi.org/10.1116/1.573056
Published: May 1985
View articletitled, Summary Abstract: The origin of oxidation induced enhancement of Si+ sputter yield in SIMS
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Journal Articles

Summary Abstract: Comparison between the adsorption of PH3 and B2H6 on Si surfaces as related to the CVD of Si

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M. L. Yu, D. J. Vitkavage, B. S. Meyerson
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 3, 861–862 (1985)
https://doi.org/10.1116/1.573332
Published: May 1985
View articletitled, Summary Abstract: Comparison between the adsorption of PH3 and B2H6 on Si surfaces as related to the CVD of Si
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Journal Articles

Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy

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E. L. Barish, D. J. Vitkavage, T. M. Mayer
Journal: Journal of Applied Physics
J. Appl. Phys. 57, 1336–1342 (1985)
https://doi.org/10.1063/1.334536
Published: February 1985
View articletitled, Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy
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Journal Articles

SIMS study of ion assisted etching of Si by Cl2

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D. J. Vitkavage, M. S. Ameen, T. M. Mayer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 2, 492–495 (1984)
https://doi.org/10.1116/1.572602
Published: April 1984
View articletitled, SIMS study of ion assisted etching of Si by Cl2
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