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Journal Articles

The role of oxygen on the stability of gettering of metals to cavities in silicon

J. S. Williams, M. J. Conway, J. Wong-Leung, P. N. K. Deenapanray, M. Petravic, R. A. Brown, D. J. Eaglesham, D. C. Jacobson

Appl. Phys. Lett. 75, 2424–2426 (1999)

https://doi.org/10.1063/1.125035

Published: October 1999

View article titled, The role of oxygen on the stability of gettering of metals to cavities in silicon

Journal Articles

The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

K. K. Bourdelle, D. J. Eaglesham, D. C. Jacobson, J. M. Poate

J. Appl. Phys. 86, 1221–1225 (1999)

https://doi.org/10.1063/1.370874

Published: August 1999

View article titled, The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Journal Articles

Defects and diffusion in MeV implanted silicon

V. C. Venezia, T. E. Haynes, Aditya Agarwal, H.-J. Gossmann, L. Pelaz, D. C. Jacobson, D. J. Eaglesham, J. L. Duggan

AIP Conf. Proc. 475, 784–788 (1999)

https://doi.org/10.1063/1.59288

Published: June 1999

View article titled, Defects and diffusion in MeV implanted silicon

Journal Articles

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham, S. B. Herner, A. T. Fiory, T. E. Haynes

Appl. Phys. Lett. 74, 2435–2437 (1999)

https://doi.org/10.1063/1.123872

Published: April 1999

View article titled, Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Journal Articles

Boron-enhanced diffusion of boron: Physical mechanisms

Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham

Appl. Phys. Lett. 74, 2331–2333 (1999)

https://doi.org/10.1063/1.123841

Published: April 1999

View article titled, Boron-enhanced diffusion of boron: Physical mechanisms

Journal Articles

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

V. C. Venezia, T. E. Haynes, Aditya Agarwal, L. Pelaz, H.-J. Gossmann, D. C. Jacobson, D. J. Eaglesham

Appl. Phys. Lett. 74, 1299–1301 (1999)

https://doi.org/10.1063/1.123530

Published: March 1999

View article titled, Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Journal Articles

Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

M. K. Weldon, M. Collot, Y. J. Chabal, V. C. Venezia, A. Agarwal, T. E. Haynes, D. J. Eaglesham, S. B. Christman, E. E. Chaban

Appl. Phys. Lett. 73, 3721–3723 (1998)

https://doi.org/10.1063/1.122875

Published: December 1998

View article titled, Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Journal Articles

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

V. C. Venezia, D. J. Eaglesham, T. E. Haynes, Aditya Agarwal, D. C. Jacobson, H.-J. Gossmann, F. H. Baumann

Appl. Phys. Lett. 73, 2980–2982 (1998)

https://doi.org/10.1063/1.122650

Published: November 1998

View article titled, Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Journal Articles

Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

J. L. Benton, K. Halliburton, S. Libertino, D. J. Eaglesham, S. Coffa

J. Appl. Phys. 84, 4749–4756 (1998)

https://doi.org/10.1063/1.368800

Published: November 1998

View article titled, Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

Journal Articles

Transient enhanced diffusion from decaborane molecular ion implantation

Aditya Agarwal, H.-J. Gossmann, D. C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada, J. Matsuo, T. E. Haynes

Appl. Phys. Lett. 73, 2015–2017 (1998)

https://doi.org/10.1063/1.122353

Published: October 1998

View article titled, Transient enhanced diffusion from decaborane molecular ion implantation

Journal Articles

Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model

Lourdes Pelaz, G. H. Gilmer, M. Jaraiz, S. B. Herner, H.-J. Gossmann, D. J. Eaglesham, G. Hobler, C. S. Rafferty, J. Barbolla

Appl. Phys. Lett. 73, 1421–1423 (1998)

https://doi.org/10.1063/1.121963

Published: September 1998

View article titled, Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model

Journal Articles

Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “ +1 ” model

S. B. Herner, H.-J. Gossmann, L. P. Pelaz, G. H. Gilmer, M. Jaraı́z, D. C. Jacobson, D. J. Eaglesham

J. Appl. Phys. 83, 6182–6184 (1998)

https://doi.org/10.1063/1.367489

Published: June 1998

View article titled, Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “ +1 ” model

Journal Articles

Efficient production of silicon-on-insulator films by co-implantation of He + with H +

Aditya Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, D. J. Eaglesham

Appl. Phys. Lett. 72, 1086–1088 (1998)

https://doi.org/10.1063/1.120945

Published: March 1998

View article titled, Efficient production of silicon-on-insulator films by co-implantation of He + with H +

Journal Articles

The precipitation of Fe at the Si–SiO 2 interface

J. Wong-Leung, D. J. Eaglesham, J. Sapjeta, D. C. Jacobson, J. M. Poate, J. S. Williams

J. Appl. Phys. 83, 580–584 (1998)

https://doi.org/10.1063/1.366643

Published: January 1998

View article titled, The precipitation of Fe at the Si–SiO 2 interface

Journal Articles

Reduction of transient diffusion from 1–5 keV Si + ion implantation due to surface annihilation of interstitials

Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, Yu. E. Erokhin

Appl. Phys. Lett. 71, 3141–3143 (1997)

https://doi.org/10.1063/1.120552

Published: November 1997

View article titled, Reduction of transient diffusion from 1–5 keV Si + ion implantation due to surface annihilation of interstitials

Journal Articles

Surface roughening during low temperature Si(100) epitaxy

O. P. Karpenko, S. M. Yalisove, D. J. Eaglesham

J. Appl. Phys. 82, 1157–1165 (1997)

https://doi.org/10.1063/1.365883

Published: August 1997

View article titled, Surface roughening during low temperature Si(100) epitaxy

Journal Articles

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, J. M. Poate, S. Coffa, P. Kringho/j, P. G. Fuochi, M. Lavalle

Appl. Phys. Lett. 71, 389–391 (1997)

https://doi.org/10.1063/1.119546

Published: July 1997

View article titled, Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

Journal Articles

Microstructure of sputtered TiN on Al

D. J. Eaglesham, J. E. Bower, M. A. Marcus, M. Gross, S. Merchant

Appl. Phys. Lett. 71, 219–221 (1997)

https://doi.org/10.1063/1.119525

Published: July 1997

View article titled, Microstructure of sputtered TiN on Al

Journal Articles

On the mechanism of the hydrogen-induced exfoliation of silicon

M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, E. E. Chaban

J. Vac. Sci. Technol. B 15, 1065–1073 (1997)

https://doi.org/10.1116/1.589416

Published: July 1997

View article titled, On the mechanism of the hydrogen-induced exfoliation of silicon

Journal Articles

Evolution from point to extended defects in ion implanted silicon

J. L. Benton, S. Libertino, P. Kringho/j, D. J. Eaglesham, J. M. Poate, S. Coffa

J. Appl. Phys. 82, 120–125 (1997)

https://doi.org/10.1063/1.365583

Published: July 1997

View article titled, Evolution from point to extended defects in ion implanted silicon

NARROW

Topics

The role of oxygen on the stability of gettering of metals to cavities in silicon

The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Defects and diffusion in MeV implanted silicon

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Boron-enhanced diffusion of boron: Physical mechanisms

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

Transient enhanced diffusion from decaborane molecular ion implantation

Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model

Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “ +1 ” model

Efficient production of silicon-on-insulator films by co-implantation of He + with H +

The precipitation of Fe at the Si–SiO 2 interface

Reduction of transient diffusion from 1–5 keV Si + ion implantation due to surface annihilation of interstitials

Surface roughening during low temperature Si(100) epitaxy

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

Microstructure of sputtered TiN on Al

On the mechanism of the hydrogen-induced exfoliation of silicon

Evolution from point to extended defects in ion implanted silicon

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