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Journal Articles

In-memory computing with emerging memory devices: Status and outlook

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P. Mannocci, M. Farronato, N. Lepri, L. Cattaneo, A. Glukhov, Z. Sun, D. Ielmini
Journal: APL Machine Learning
APL Mach. Learn. 1, 010902 (2023)
https://doi.org/10.1063/5.0136403
Published: February 2023
View article titled, In-memory computing with emerging memory devices: Status and outlook
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Journal Articles

Brain-inspired computing via memory device physics

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D. Ielmini, Z. Wang, Y. Liu
Journal: APL Materials
APL Mater. 9, 050702 (2021)
https://doi.org/10.1063/5.0047641
Published: May 2021
View article titled, Brain-inspired computing via memory device physics
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Journal Articles

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

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V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini
Journal: APL Materials
APL Mater. 7, 081120 (2019)
https://doi.org/10.1063/1.5108650
Published: August 2019
View article titled, Multilevel HfO<sub>2</sub>-based RRAM devices for low-power neuromorphic networks
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Journal Articles

Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5

K. V. Mitrofanov, A. V. Kolobov, P. Fons, X. Wang, J. Tominaga, Y. Tamenori, T. Uruga, N. Ciocchini, D. Ielmini
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 173501 (2014)
https://doi.org/10.1063/1.4874415
Published: May 2014
View article titled, Ge L<sub>3</sub>-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
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Journal Articles

Evidence for electrically induced drift of threshold voltage in Ge2Sb2Te5

M. Cassinerio, N. Ciocchini, D. Ielmini
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 023502 (2013)
https://doi.org/10.1063/1.4811553
Published: July 2013
View article titled, Evidence for electrically induced drift of threshold voltage in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
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Includes: Supplementary data
Journal Articles

Switching of nanosized filaments in NiO by conductive atomic force microscopy

F. Nardi, D. Deleruyelle, S. Spiga, C. Muller, B. Bouteille, D. Ielmini
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 064310 (2012)
https://doi.org/10.1063/1.4752032
Published: September 2012
View article titled, Switching of nanosized filaments in NiO by conductive atomic force microscopy
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Journal Articles

Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

M. Rizzi, A. Spessot, P. Fantini, D. Ielmini
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 223513 (2011)
https://doi.org/10.1063/1.3664631
Published: November 2011
View article titled, Role of mechanical stress in the resistance drift of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films and phase change memories
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Journal Articles

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, M. Fanciulli
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 034506 (2011)
https://doi.org/10.1063/1.3544499
Published: February 2011
View article titled, Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
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Journal Articles

A physics-based model of electrical conduction decrease with time in amorphous Ge 2 Sb 2 Te 5

M. Boniardi, A. Redaelli, A. Pirovano, I. Tortorelli, D. Ielmini, F. Pellizzer
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 084506 (2009)
https://doi.org/10.1063/1.3109063
Published: April 2009
View article titled, A physics-based model of electrical conduction decrease with time in amorphous Ge 2 Sb 2 Te 5
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Journal Articles

Resistance transition in metal oxides induced by electronic threshold switching

D. Ielmini, C. Cagli, F. Nardi
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 063511 (2009)
https://doi.org/10.1063/1.3081401
Published: February 2009
View article titled, Resistance transition in metal oxides induced by electronic threshold switching
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Journal Articles

Temperature acceleration of structural relaxation in amorphous Ge 2 Sb 2 Te 5

D. Ielmini, S. Lavizzari, D. Sharma, A. L. Lacaita
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 193511 (2008)
https://doi.org/10.1063/1.2930680
Published: May 2008
View article titled, Temperature acceleration of structural relaxation in amorphous Ge 2 Sb 2 Te 5
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Journal Articles

Intersubband relaxation time for In x Ga 1−x As/AlAs quantum wells with large transition energy

G. Ghislotti, E. Riedo, D. Ielmini, M. Martinelli
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 3626–3628 (1999)
https://doi.org/10.1063/1.125409
Published: December 1999
View article titled, Intersubband relaxation time for In x Ga 1−x As/AlAs quantum wells with large transition energy
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