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Journal Articles

H-tailored surface conductivity in narrow band gap In(AsN)

Open Access
A. V. Velichko, A. Patanè, M. Capizzi, I. C. Sandall, D. Giubertoni, O. Makarovsky, A. Polimeni, A. Krier, Q. Zhuang, C. H. Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 022111 (2015)
https://doi.org/10.1063/1.4906111
Published: January 2015
View article titled, H-tailored surface conductivity in narrow band gap In(AsN)
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Journal Articles

Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

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E. Demenev, D. Giubertoni, S. Gennaro, M. Bersani, E. Hourdakis, A. G. Nassiopoulou, M. A. Reading, J. A. van den Berg
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1496, 272–275 (2012)
https://doi.org/10.1063/1.4766541
Published: November 2012
View article titled, Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers
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Journal Articles

Solid phase epitaxial re-growth of Sn ion implanted germanium thin films

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D. Giubertoni, E. Demenev, S. Gupta, Y. Jestin, F. Meirer, S. Gennaro, E. Iacob, G. Pepponi, G. Pucker, R. M. Gwilliam, C. Jeynes, J. L. Colaux, K. C. Saraswat, M. Bersani
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1496, 103–106 (2012)
https://doi.org/10.1063/1.4766500
Published: November 2012
View article titled, Solid phase epitaxial re-growth of Sn ion implanted germanium thin films
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Journal Articles

Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing

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F. Meirer, E. Demenev, D. Giubertoni, S. Gennaro, L. Vanzetti, G. Pepponi, M. Bersani, M. A. Sahiner, G. Steinhauser, M. A. Foad, J. C. Woicik, A. Mehta, P. Pianetta
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1496, 183–188 (2012)
https://doi.org/10.1063/1.4766520
Published: November 2012
View article titled, Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing
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Journal Articles

Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon

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G. Pepponi, D. Giubertoni, M. Bersani, F. Meirer, D. Ingerle, G. Steinhauser, C. Streli, P. Hoenicke, B. Beckhoff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1C59–C1C64 (2010)
https://doi.org/10.1116/1.3292647
Published: March 2010
View article titled, Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon
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Journal Articles

Multi‐technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium

Free
D. Giubertoni, G. Pepponi, B. Beckhoff, P. Hoenicke, S. Gennaro, F. Meirer, D. Ingerle, G. Steinhauser, M. Fried, P. Petrik, A. Parisini, M. A. Reading, C. Streli, J. A. van den Berg, M. Bersani
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1173, 45–49 (2009)
https://doi.org/10.1063/1.3251258
Published: September 2009
View article titled, Multi‐technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium
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Journal Articles

GIXRF In The Soft X‐Ray Range Used For The Characterization Of Ultra Shallow Junctions

Free
B. Beckhoff, P. Hoenicke, D. Giubertoni, G. Pepponi, M. Bersani
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1173, 29–33 (2009)
https://doi.org/10.1063/1.3251239
Published: September 2009
View article titled, GIXRF In The Soft X‐Ray Range Used For The Characterization Of Ultra Shallow Junctions
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Journal Articles

Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

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A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani, J. A. van den Berg
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 261907 (2008)
https://doi.org/10.1063/1.2951896
Published: July 2008
View article titled, Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy
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Journal Articles

Effect of hydrogen incorporation temperature in in plane -engineered Ga As N ∕ Ga As N : H heterostructures

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R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, A. Gerardino
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 221901 (2008)
https://doi.org/10.1063/1.2939000
Published: June 2008
View article titled, Effect of hydrogen incorporation temperature in in plane -engineered Ga As N ∕ Ga As N : H heterostructures
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Journal Articles

Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

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J. A. Sharp, A. J. Smith, R. P. Webb, K. J. Kirkby, N. E. B. Cowern, D. Giubertoni, S. Gennaro, M. Bersani, M. A. Foad, P. F. Fazzini, F. Cristiano
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 082109 (2008)
https://doi.org/10.1063/1.2885091
Published: February 2008
View article titled, Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
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Journal Articles

P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation

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M. Posselt, B. Schmidt, W. Anwand, R. Grötzschel, V. Heera, A. Mücklich, C. Wündisch, W. Skorupa, H. Hortenbach, S. Gennaro, M. Bersani, D. Giubertoni, A. Möller, H. Bracht
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 430–434 (2008)
https://doi.org/10.1116/1.2805249
Published: February 2008
View article titled, P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
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Journal Articles

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

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M. Ferri, S. Solmi, D. Giubertoni, M. Bersani, J. J. Hamilton, M. Kah, K. Kirkby, E. J. H. Collart, N. E.B. Cowern
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 103707 (2007)
https://doi.org/10.1063/1.2812676
Published: November 2007
View article titled, Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator
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Journal Articles

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

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J. J. Hamilton, K. J. Kirkby, N. E. B. Cowern, E. J. H. Collart, M. Bersani, D. Giubertoni, S. Gennaro, A. Parisini
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 092122 (2007)
https://doi.org/10.1063/1.2778749
Published: August 2007
View article titled, Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
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Journal Articles

Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study

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G. Pepponi, D. Giubertoni, S. Gennaro, M. Bersani, M. Anderle, R. Grisenti, M. Werner, J. A. Van Den Berg
Journal: AIP Conference Proceedings
AIP Conf. Proc. 866, 117–120 (2006)
https://doi.org/10.1063/1.2401475
Published: November 2006
View article titled, Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study
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Journal Articles

Deactivation of low energy Boron Implants into Pre‐amorphised Si after Non‐Melt Laser Annealing with Multiple Scans

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J. A. Sharp, N. E. B. Cowern, R. P. Webb, D. Giubertoni, S. Gennaro, M. Bersani, M. A. Foad, K. J. Kirkby
Journal: AIP Conference Proceedings
AIP Conf. Proc. 866, 33–36 (2006)
https://doi.org/10.1063/1.2401455
Published: November 2006
View article titled, Deactivation of low energy Boron Implants into Pre‐amorphised Si after Non‐Melt Laser Annealing with Multiple Scans
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Journal Articles

The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co‐Implants in Silicon

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S. Gennaro, D. Giubertoni, M. Bersani, J. Foggiato, W. S. Yoo, R. Gwilliam, M. Anderle
Journal: AIP Conference Proceedings
AIP Conf. Proc. 866, 113–116 (2006)
https://doi.org/10.1063/1.2401474
Published: November 2006
View article titled, The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co‐Implants in Silicon
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Journal Articles

Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants

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A. J. Smith, N. E. B. Cowern, B. Colombeau, R. Gwilliam, B. J. Sealy, E. J. H. Collart, S. Gennaro, D. Giubertoni, M. Bersani, M. Barozzi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 866, 84–87 (2006)
https://doi.org/10.1063/1.2401467
Published: November 2006
View article titled, Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants
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Journal Articles

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon‐On‐Insulator

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J. J. Hamilton, E. J. H. Collart, M. Bersani, D. Giubertoni, S. Gennaro, N. S. Bennett, N. E. B. Cowern, K. J. Kirkby
Journal: AIP Conference Proceedings
AIP Conf. Proc. 866, 73–75 (2006)
https://doi.org/10.1063/1.2401465
Published: November 2006
View article titled, Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon‐On‐Insulator
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Journal Articles

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

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J. A. Sharp, N. E. B. Cowern, R. P. Webb, K. J. Kirkby, D. Giubertoni, S. Gennaro, M. Bersani, M. A. Foad, F. Cristiano, P. F. Fazzini
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 192105 (2006)
https://doi.org/10.1063/1.2385215
Published: November 2006
View article titled, Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
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Journal Articles

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si ∕ Si O 2 interface

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J. J. Hamilton, N. E. B. Cowern, J. A. Sharp, K. J. Kirkby, E. J. H. Collart, B. Colombeau, M. Bersani, D. Giubertoni, A. Parisini
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 042111 (2006)
https://doi.org/10.1063/1.2240257
Published: July 2006
View article titled, Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si ∕ Si O 2 interface
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